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Vishay Semiconductor Diodes Division |
DIODE 0.5A 1800V 300NS DO-204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1800V
- Capacitance @ Vr, F: 5pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,720 |
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1800V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1800V | 5pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 105ns
- Current - Reverse Leakage @ Vr: 8µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 Insulated, TO-220AC |
Stock7,728 |
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600V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 8µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE FAST 4500V 1830A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,100 |
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- | - | - | - | - | - | - | - | - | - | - |
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Powerex Inc. |
DIODE MODULE 2.2KV 500A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 50mA @ 2200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock4,784 |
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2200V | 500A | 2.25V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 2200V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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GeneSiC Semiconductor |
DIODE MODULE 400V 100A D-67
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,328 |
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400V | 100A | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | - | Chassis Mount | D-67 | D-67 | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 40V
- Capacitance @ Vr, F: 750pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock7,440 |
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40V | 10A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 700MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 800mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock7,632 |
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600V | 700mA | 2.5V @ 800mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 40V 1.7A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock6,128 |
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40V | 1.7A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 100V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 29pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock3,424 |
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100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 29pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 70V 15MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 15mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,888 |
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70V | 15mA (DC) | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock4,320 |
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400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 310A
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock5,232 |
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200V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 200V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 12A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock18,636 |
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50V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 50V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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50 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock831 |
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1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 1200 V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, LOW VF, 1A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323HS
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock70,320 |
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40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | SOD-323HS | -55°C ~ 150°C |
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onsemi |
RECTIFIER DIODE, SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
SWITCHING DIODE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: UB2
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | UB2 | -65°C ~ 200°C |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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IXYS |
DIODE GEN PURP 600V 8A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AA | -40°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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60 V | 3A | 750 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 8A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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40 V | 8A | 700 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP REV 50V 16A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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50 V | 16A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
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Comchip Technology |
DIODE GEN PURP 150V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
150 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 70V 200MA SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 nA @ 70 V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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70 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 70 V | 6pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
100 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 30A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 41 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 41 ns | 20 µA @ 600 V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |