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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 90V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock2,464 |
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90V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | 65pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock2,512 |
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100V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 2.3A RADIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2.3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Radial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Radial |
Stock2,880 |
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1200V | 2.3A | 1.3V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1200V | - | Through Hole | Radial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock664,860 |
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30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220AC Full Pack
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock3,360 |
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1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 35A DO203AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock3,440 |
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800V | 35A | 1.4V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Powerex Inc. |
DIODE GEN PURP 1.2KV 175A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 45mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DO-205AA, DO-8, Stud |
Stock5,440 |
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1200V | 175A | 1.65V @ 470A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 45mA @ 1200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SOFT FAST 30A TO-247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-3 |
Stock4,048 |
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400V | 30A | 1.41V @ 30A | Standard Recovery >500ns, > 200mA (Io) | 60ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 6A, 300V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,072 |
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300V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock3,296 |
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600V | 1.2A | 1.55V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock6,624 |
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600V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SMA
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock3,456 |
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600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 60V
- Capacitance @ Vr, F: 145pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock7,952 |
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60V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 145pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 2A, 50V, 150NS, DO-
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,600 |
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50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 100V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 100V
- Capacitance @ Vr, F: 2650pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: D-67 HALF-PAK |
Stock3,632 |
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100V | 120A | 910mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 100V | 2650pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (HSMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AC, SMA |
Stock27,600 |
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1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 1KV 1A SOD123H
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123H
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123H |
Stock757,182 |
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1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123H | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SMA-FL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 1A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 30V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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30 V | 6A | 550 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Comchip Technology |
DIODE SWITCHING 100V 250MA 200MW
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,850 |
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100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 800V 1.5A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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800 V | 1.5A | 1.8 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 800 V | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 175°C |
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Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, LOW VF, 3A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 30 V
- Capacitance @ Vr, F: 210pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: iSGA (SOD-123HS)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock13,188 |
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40 V | 3A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 30 V | 210pF @ 4V, 1MHz | Surface Mount | SOD-123H | iSGA (SOD-123HS) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 60V 5A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock1,194 |
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60 V | 5A | 750 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 800V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,400 |
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800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A US2H
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 30 V
- Capacitance @ Vr, F: 380pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: US2H
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock18,303 |
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30 V | 2A | 470 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 380pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C (Max) |
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Microchip Technology |
UFR,FRR
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
|
500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock114,114 |
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200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 400V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 nA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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400 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |