Page 47 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RL104-N-0-4-AP
Micro Commercial Co

DIODE GEN PURP 400V 1A A-405

Package: Axial, Radial Bend

Stock4,752
SBYV26C-M3/54
Vishay Semiconductor Diodes Division

DIODE RECT GPP 1A 600V DO-204AL

Package: DO-204AL, DO-41, Axial

Stock5,968
VS-MBR340
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A C16

Package: C-16, Axial

Stock6,400
HFA15PB60
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO247AC

Package: TO-247-2

Stock4,496
R9G01212XX
Powerex Inc.

DIODE MODULE 1.2KV 1200A DO200AB

Package: DO-200AB, B-PUK

Stock3,584
MDO500-20N1
IXYS

DIODE MODULE 2KV 560A Y1-CU

Package: Y1-CU

Stock4,384
A170M
Powerex Inc.

DIODE GEN PURP 600V 100A DO205AA

Package: DO-205AA, DO-8, Stud

Stock5,408
S300D
GeneSiC Semiconductor

DIODE GEN PURP 200V 300A DO205AB

Package: DO-205AB, DO-9, Stud

Stock3,840
JANTX1N5807
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

Package: B, Axial

Stock4,400
GB05SLT12-252
GeneSiC Semiconductor

DIODE SILICON 1.2KV 5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,392
VF20120SG-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 120V ITO220AB

Package: TO-220-3 Isolated Tab

Stock4,384
ES 1ZV0
Sanken

DIODE GEN PURP 200V 700MA AXIAL

Package: Axial

Stock3,840
RFV15TG6SGC9
Rohm Semiconductor

DIODE GEN PURP 600V 15A TO220AC

Package: TO-220-2

Stock16,212
MBRS4201T3G
ON Semiconductor

DIODE SCHOTTKY 200V 4A SMC

Package: DO-214AB, SMC

Stock886,644
SCS220KGHRC
Rohm Semiconductor

DIODE SCHOTTKY 1200V 20A TO220-2

Package: TO-220-2

Stock15,744
B360AM-13-F
Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMA

Package: DO-214AC, SMA

Stock49,956
FFAF30UA60S
onsemi

30 A, 600 V, UITRAFAST II SINGLE

Package: -

Request a Quote
1N5418E3
Microchip Technology

DIODE GEN PURP 400V 3A B AXIAL

Package: -

Request a Quote
SK84_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 8A SMC

Package: -

Stock372
FR101T-R
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 50V 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL104-N-0-4-AP	Micro Commercial Co	DIODE GEN PURP 400V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial, Radial Bend	Stock4,752	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
SBYV26C-M3/54	Vishay Semiconductor Diodes Division	DIODE RECT GPP 1A 600V DO-204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,968	600V	1A	2.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	45pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
VS-MBR340	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: C-16, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	Package: C-16, Axial	Stock6,400	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 40V	-	Through Hole	C-16, Axial	C-16	-40°C ~ 150°C
HFA15PB60	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-247-2	Stock4,496	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
R9G01212XX	Powerex Inc.	DIODE MODULE 1.2KV 1200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock3,584	1200V	1200A	1.45V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 1200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
MDO500-20N1	IXYS	DIODE MODULE 2KV 560A Y1-CU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 560A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 2000V Capacitance @ Vr, F: 576pF @ 700V, 1MHz Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU Operating Temperature - Junction: -	Package: Y1-CU	Stock4,384	2000V	560A	1.3V @ 1200A	Standard Recovery >500ns, > 200mA (Io)	-	30mA @ 2000V	576pF @ 700V, 1MHz	Chassis Mount	Y1-CU	Y1-CU	-
A170M	Powerex Inc.	DIODE GEN PURP 600V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock5,408	600V	100A	1.3V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
S300D	GeneSiC Semiconductor	DIODE GEN PURP 200V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	Package: DO-205AB, DO-9, Stud	Stock3,840	200V	300A	1.2V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
JANTX1N5807	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock4,400	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
GB05SLT12-252	GeneSiC Semiconductor	DIODE SILICON 1.2KV 5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,392	1200V	5A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	260pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 175°C
VF20120SG-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 120V ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-3 Isolated Tab	Stock4,384	120V	20A	1.33V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Through Hole	TO-220-3 Isolated Tab	ITO-220AB	-40°C ~ 150°C
ES 1ZV0	Sanken	DIODE GEN PURP 200V 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,840	200V	700mA	2.5V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
RFV15TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2	Stock16,212	600V	15A	2.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
MBRS4201T3G	ON Semiconductor	DIODE SCHOTTKY 200V 4A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 860mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock886,644	200V	4A	860mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
SCS220KGHRC	Rohm Semiconductor	DIODE SCHOTTKY 1200V 20A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 1060pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock15,744	1200V	20A (DC)	1.6V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1060pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
B360AM-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock49,956	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	130pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
FFAF30UA60S	onsemi	30 A, 600 V, UITRAFAST II SINGLE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	30A	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	100 µA @ 600 V	-	Through Hole	TO-3P-3 Full Pack	TO-3PF-3	-65°C ~ 175°C
1N5418E3	Microchip Technology	DIODE GEN PURP 400V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SK84_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 8A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock372	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
FR101T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
S5KLHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	800 V	5A	1.15 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 800 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
S3DA_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	35pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
SS24HE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock12,519	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	90pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
RHRP860-F102	onsemi	DIODE GEN PURP 600V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	8A	2.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	100 µA @ 600 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
YQ5RSM10SDTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 5A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	Package: -	Stock12,000	100 V	5A	770 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
S20410	Microchip Technology	DIODE GEN PURP 100V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
JANTXV1N6642US-TR	Microchip Technology	DIODE GEN PURP 100V 300MA D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 500 nA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 100 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
SF33-TP	Micro Commercial Co	DIODE GEN PURP 150V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C