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Diodes Incorporated |
DIODE SCHOTTKY 50V 15MA MINIMELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 15mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 40V
- Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: Mini MELF
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-213AA |
Stock3,808 |
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50V | 15mA (DC) | 950mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.1pF @ 0V, 1MHz | Surface Mount | DO-213AA | Mini MELF | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AC, SMA |
Stock7,184 |
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20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock3,360 |
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100V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1.5A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock7,664 |
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50V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,616 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 330A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 330A
- Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AB, DO-9, Stud |
Stock3,600 |
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1200V | 330A | 1.22V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1200V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
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Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE 100V 400A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,024 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, SUPER FAST, 16A, 400V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock4,944 |
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400V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 120V 10A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 820mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: 8-PowerTDFN, 5 Leads |
Stock3,200 |
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120V | 10A | 820mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A SOD57
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4µs
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-57, Axial |
Stock3,312 |
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400V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,184 |
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600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock2,560 |
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90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,648 |
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100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Nexperia USA Inc. |
PMEG4010CEA/SOD323/SOD2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,632 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 300V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 8pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock7,456 |
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300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 200MA 0503
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 200nA @ 30V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0503 (1308 Metric)
- Supplier Device Package: 0503/SOD-723F
- Operating Temperature - Junction: 125°C (Max)
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Package: 0503 (1308 Metric) |
Stock6,704 |
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40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | 0503 (1308 Metric) | 0503/SOD-723F | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 200MA MICMELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 50nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: MicroMELF
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock6,096 |
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75V | 200mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | MicroMELF | 125°C (Max) |
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SMC Diode Solutions |
DIODE FAST 200V 1A 150NS DO-41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock6,592 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AC, SMA |
Stock3,216 |
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40V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 270ns
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock14,514 |
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1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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NTE Electronics, Inc |
DIODE GEN PURP 500V 3A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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500 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 15V 25A THINKEY2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
- Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™2
- Supplier Device Package: ThinKey™2
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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15 V | 25A | 520 mV @ 25 A | No Recovery Time > 500mA (Io) | - | 1.2 mA @ 15 V | 2000pF @ 5V, 1MHz | Surface Mount | ThinKey™2 | ThinKey™2 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 150V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 60V 1.1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1.1A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 60 V
- Capacitance @ Vr, F: 55pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock48,285 |
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60 V | 1.1A | 760 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 55pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A S-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 30 V
- Capacitance @ Vr, F: 50pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock8,940 |
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30 V | 1.5A | 460 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 50pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 8A | 2.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 50 µA @ 1000 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 500MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 43pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 150°C
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Package: - |
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40 V | 500mA | 470 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 43pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C |
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Micro Commercial Co |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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800 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |