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Microsemi Corporation |
DIODE SCHOTTKY 20V 200MA DO35
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AH, DO-35, Axial |
Stock4,448 |
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20V | 200mA | 510mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock6,400 |
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100V | 1A | 780mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
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Semtech Corporation |
DIODE GEN PURP 100V 2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 120V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Axial |
Stock4,544 |
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100V | 2A | 120V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 1µA @ 100V | - | Chassis, Stud Mount | Axial | - | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A ADDAPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: ADD-A-PAK (3)
- Supplier Device Package: ADD-A-PAK?
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: ADD-A-PAK (3) |
Stock5,168 |
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1200V | 80A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1200V | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK? | -40°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1KV 16A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock2,576 |
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1000V | 16A | 1.1V @ 16A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.7mA @ 45V
- Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,872 |
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45V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 45V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 8A, 500V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 500V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock7,616 |
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500V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 20V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock36,000 |
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20V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AC, SMA |
Stock3,104 |
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40V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150MW 40V SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 30V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-76, SOD-323 |
Stock7,216 |
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40V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, 1A, 100V, SUB SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-219AB |
Stock2,912 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock7,344 |
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200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 4A, 600V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock2,960 |
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600V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Nexperia USA Inc. |
BAS21GW/SOD123/SOD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -
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Package: SOD-123 |
Stock91,908 |
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30V | - | 400mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | 10pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | - |
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Panasonic Electronic Components |
DIODE SCHOTTKY 20V 500MA MINI3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.4ns
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: 7pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
- Operating Temperature - Junction: 125°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock157,458 |
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20V | 500mA | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.4ns | 30µA @ 10V | 7pF @ 10V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G3-B | 125°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 200V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock116,004 |
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200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 50V 200MA LL34
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock4,974,744 |
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50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 30V 200MA 0603
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 30V
- Capacitance @ Vr, F: 9pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 0603C/SOD-523F
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock48,000 |
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30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 9pF @ 10V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603C/SOD-523F | 125°C (Max) |
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Panasonic Electronic Components |
DIODE SCHOTTKY 30V 200MA SMINI2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6ns
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: 4.5pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SMini2-F5-B
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-90, SOD-323F |
Stock4,480,098 |
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30V | 200mA | 470mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 1.6ns | 200µA @ 30V | 4.5pF @ 10V, 1MHz | Surface Mount | SC-90, SOD-323F | SMini2-F5-B | 125°C (Max) |
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Microchip Technology |
DIODE GEN PURP 600V 5A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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600 V | 5A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 85pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,700 |
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400 V | 16A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 400V 2.6A SLIMDPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 2.6A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.4 µs
- Current - Reverse Leakage @ Vr: 15 µA @ 400 V
- Capacitance @ Vr, F: 58pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock14,310 |
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400 V | 2.6A | 1.12 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | 2.4 µs | 15 µA @ 400 V | 58pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
75 V | 200mA | 1.2 V @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 1.5V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock83,970 |
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1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 3A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Surface Mount | Die | Die | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE GEN PURP 600V 10A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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600 V | 10A | 2.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 5A CFP15B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 16 ns
- Current - Reverse Leakage @ Vr: 1.8 µA @ 60 V
- Capacitance @ Vr, F: 560pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: CFP15B
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock85,101 |
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60 V | 5A | 690 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 1.8 µA @ 60 V | 560pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15B | 175°C (Max) |
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Microchip Technology |
DIODE GP 125V 150MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 2 nA @ 125 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |