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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A TO-220
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 100V
- Capacitance @ Vr, F: 850pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,776 |
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100V | 20A | 800mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | 850pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 500V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock6,432 |
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500V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 500V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 1.6KV MAGN-A-PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 270A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: MAGN-A-PAK (3)
- Supplier Device Package: MAGN-A-PAK?
- Operating Temperature - Junction: -
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Package: MAGN-A-PAK (3) |
Stock2,448 |
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1600V | 270A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | MAGN-A-PAK (3) | MAGN-A-PAK? | - |
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NXP |
DIODE AVALANCHE 200V 1.5A MELF
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 21pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-87
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SOD-87 |
Stock4,880 |
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200V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 200V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AR, Axial |
Stock2,416 |
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60V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 60V | - | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 3KV 560A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3000V
- Current - Average Rectified (Io): 560A
- Voltage - Forward (Vf) (Max) @ If: 3.24V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 75mA @ 3000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock6,208 |
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3000V | 560A | 3.24V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 75mA @ 3000V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 22ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,112 |
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200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,480 |
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90V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock297,600 |
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800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 70V 70MA 0603
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 0603/SOD-523F
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock6,848 |
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70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603/SOD-523F | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock4,080 |
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200V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Littelfuse Inc. |
DIODE GEN PURP 1KV 15.9A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 15.9A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15.9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4µs
- Current - Reverse Leakage @ Vr: 20µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Isolated Tab
- Supplier Device Package: TO-220 Isolated Tab
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: TO-220-3 Isolated Tab |
Stock11,556 |
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1000V | 15.9A | 1.6V @ 15.9A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 20µA @ 1000V | - | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | -40°C ~ 125°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 20V 500MA 2DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 130µA @ 10V
- Capacitance @ Vr, F: 35pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DFN1608D-2
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-XDFN |
Stock2,288 |
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20V | 500mA | 410mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 130µA @ 10V | 35pF @ 1V, 1MHz | Surface Mount | 2-XDFN | DFN1608D-2 | 150°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 100V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock24,048 |
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100V | 5A | 1.2V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.2KV 29A TO252-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 29A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: 367pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock7,641 |
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1200 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 80 V
- Capacitance @ Vr, F: 165pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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80 V | 8A | 850 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 80 V | 165pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 35A SLIMDPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 600 V
- Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock64,779 |
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60 V | 35A | 720 mV @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 600 V | 3600pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 150°C |
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SMC Diode Solutions |
600V, 30A, ITO-220AC, ULTRA FAST
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A SMAF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: 160pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 160pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMAF | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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30 V | 3A | 410 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Bourns Inc. |
DIODE GEN PURP 1.6KV 1A 2SMD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock33,000 |
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1600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1600 V | 12pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 20V 1A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: - |
Request a Quote |
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20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 20 V | - | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Stock8,670 |
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200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 8A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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60 V | 8A | 750 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 400V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 nA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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400 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 600V 1A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | - | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 175°C |