Page 733 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

NUR460P/L06U
WeEn Semiconductors

DIODE GEN PURP 600V 4A DO201AD

Package: DO-201AD, Axial

Stock4,512
1SR139-600T-31
Rohm Semiconductor

DIODE GEN PURP 600V 1A DO204AL

Package: DO-41 Mini, Axial

Stock3,536
EGP10B-TP
Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock3,392
123NQ100
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 120A HALF-PAK

Package: D-67 HALF-PAK

Stock12,156
SF2006GHC0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 400V, 35

Package: TO-220-3

Stock7,760
RFN10NS6STL
Rohm Semiconductor

DIODE GEN PURP 600V 10A LPDS

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,224
SK84CHR7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 4

Package: DO-214AB, SMC

Stock3,536
SR505 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 5

Package: DO-201AD, Axial

Stock5,072
ACDBMT1150-HF
Comchip Technology

DIODE SCHOTTKY 150V 1A SOD123H

Package: SOD-123H

Stock4,048
CD214A-F150
Bourns Inc.

DIODE GEN PURP 50V 1A DO214AC

Package: DO-214AC, SMA

Stock5,312
ES1CLHRHG
TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

Package: DO-219AB

Stock3,344
BAT43W-E3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

Package: SOD-123

Stock3,360
CDSF355B
Comchip Technology

DIODE GEN PURP 80V 100MA 1005

Package: 1005 (2512 Metric)

Stock29,928
VS-20ETS12STRLPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 20A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,820
EU1
Sanken Electric USA Inc.

DIODE GEN PURP 400V 250MA AXIAL

Package: -

Request a Quote
MBR1040_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 10A TO220AC

Package: -

Request a Quote
RBLQ10RSM10TL1
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 10A,

Package: -

Request a Quote
FR102GP-TP
Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

Package: -

Request a Quote
JAN1N3164R
Microchip Technology

DIODE GP 200V 300A DO205AB DO9

Package: -

Request a Quote
S5JBH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AA

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
NUR460P/L06U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -	Package: DO-201AD, Axial	Stock4,512	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
1SR139-600T-31	Rohm Semiconductor	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	Package: DO-41 Mini, Axial	Stock3,536	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
EGP10B-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,392	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
123NQ100	Vishay Semiconductor Diodes Division	DIODE MODULE 100V 120A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 100V Capacitance @ Vr, F: 2650pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67 HALF-PAK	Stock12,156	100V	120A	910mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 100V	2650pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
SF2006GHC0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 400V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock7,760	400V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RFN10NS6STL	Rohm Semiconductor	DIODE GEN PURP 600V 10A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,224	600V	10A	1.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS	150°C (Max)
SK84CHR7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock3,536	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SR505 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock5,072	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ACDBMT1150-HF	Comchip Technology	DIODE SCHOTTKY 150V 1A SOD123H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock4,048	150V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	120pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
CD214A-F150	Bourns Inc.	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,312	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC	-55°C ~ 150°C
ES1CLHRHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,344	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAT43W-E3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C (Max)	Package: SOD-123	Stock3,360	30V	200mA (DC)	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
CDSF355B	Comchip Technology	DIODE GEN PURP 80V 100MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock29,928	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
VS-20ETS12STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,820	1200V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
EU1	Sanken Electric USA Inc.	DIODE GEN PURP 400V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	250mA	2.5 V @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 400 V	-	Through Hole	Axial	-	-40°C ~ 150°C
MBR1040_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	10A	700 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
RBLQ10RSM10TL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	Package: -	Request a Quote	100 V	10A	670 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
FR102GP-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
JAN1N3164R	Microchip Technology	DIODE GP 200V 300A DO205AB DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	200 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 200 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
S5JBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	600 V	5A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
NRVHPRS1JFA	onsemi	DIODE GP 600V 800MA SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	800mA	1.3 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
BY880-800	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 800 V	-	Through Hole	Axial	Axial	-50°C ~ 175°C
1N1206RB	Solid State Inc.	DIODE GEN PURP REV 600V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SICRB101200	SMC Diode Solutions	DIODE SIL CARB 1.2KV 10A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 640pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	640pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
DHG10IM1800UZ-TRL	IXYS	DIODE GEN PURP 1.8KV 10A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 260 ns Current - Reverse Leakage @ Vr: 50 µA @ 1800 V Capacitance @ Vr, F: 3pF @ 200V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1800 V	10A	2.27 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	260 ns	50 µA @ 1800 V	3pF @ 200V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
RS1A-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1PS79SB30Z	Nexperia USA Inc.	1PS79SB30/SOD523/SC-79 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C	Package: -	Stock39,840	40 V	200mA	600 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 40 V	20pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C
JANTXV1N5807URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C