Page 736 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BAS 16 B5003
Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock7,488
SSA34HE3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AC

Package: DO-214AC, SMA

Stock3,168
AS3PMHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.1A TO277

Package: TO-277, 3-PowerDFN

Stock5,072
VS-60CPF06PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

Package: TO-247-3

Stock6,416
SS8PH9-E3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 8A TO277A

Package: TO-277, 3-PowerDFN

Stock6,896
1N4003
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock492,792
FR305-T
Diodes Incorporated

DIODE GEN PURP 600V 3A DO201AD

Package: DO-201AD, Axial

Stock3,808
VS-50PF40
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 50A DO203AB

Package: DO-203AB, DO-5, Stud

Stock6,432
S12MR
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 12A DO4

Package: DO-203AA, DO-4, Stud

Stock7,424
DSS16-0045AS-TUB
IXYS

DIODE SCHOTTKY 45V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,584
SS10PH45-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO277A

Package: TO-277, 3-PowerDFN

Stock369,600
SF4004-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 1A 400V SOD-57

Package: SOD-57, Axial

Stock4,624
SR109 R1G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Package: DO-204AL, DO-41, Axial

Stock3,568
HER208G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 1000V

Package: DO-204AC, DO-15, Axial

Stock7,520
JAN1N4153-1
Microsemi Corporation

DIODE GEN PURP 75V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock6,456
FFH50US60S
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 50A TO247

Package: TO-247-2

Stock14,868
SBRT3M60SA-13
Diodes Incorporated

DIODE SBR 60V 3A SMA

Package: DO-214AC, SMA

Stock2,480
CMPD1001 TR
Central Semiconductor Corp

DIODE GEN PURP 90V 250MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,040
BAT54XV2T5G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

Package: SC-79, SOD-523

Stock136,050
1N4002G
ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock27,162

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS 16 B5003	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock7,488	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
SSA34HE3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock3,168	40V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
AS3PMHM3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 2.1A TO277 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.1A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock5,072	1000V	2.1A (DC)	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	10µA @ 1000V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
VS-60CPF06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-247-3	Stock6,416	600V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SS8PH9-E3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock6,896	90V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 90V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
1N4003	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock492,792	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
FR305-T	Diodes Incorporated	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock3,808	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
VS-50PF40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 50A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock6,432	400V	50A	1.4V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 180°C
S12MR	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock7,424	1000V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
DSS16-0045AS-TUB	IXYS	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 670mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,584	45V	16A	670mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 175°C
SS10PH45-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80µA @ 45V Capacitance @ Vr, F: 270pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock369,600	45V	10A	720mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	80µA @ 45V	270pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SF4004-TAP	Vishay Semiconductor Diodes Division	DIODE AVAL 1A 400V SOD-57 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock4,624	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SR109 R1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,568	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER208G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock7,520	1000V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
JAN1N4153-1	Microsemi Corporation	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock6,456	75V	150mA (DC)	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
FFH50US60S	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 50A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.54V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 124ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-247-2	Stock14,868	600V	50A	1.54V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	124ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
SBRT3M60SA-13	Diodes Incorporated	DIODE SBR 60V 3A SMA Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,480	60V	3A	590mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
CMPD1001 TR	Central Semiconductor Corp	DIODE GEN PURP 90V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 90V Capacitance @ Vr, F: 35pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-236-3, SC-59, SOT-23-3	Stock3,040	90V	250mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 90V	35pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAT54XV2T5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-79, SOD-523	Stock136,050	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 125°C
1N4002G	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock27,162	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
STPS30M60DJF-TR	STMicroelectronics	DIODE SCHOTTKY 60V 30A POWERFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 720mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 150°C (Max)	Package: 8-PowerVDFN	Stock5,904	60V	30A	720mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	90µA @ 60V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	150°C (Max)
S3D12065A	SMC Diode Solutions	DIODE SIL CARB 650V 35A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 16 µA @ 650 V Capacitance @ Vr, F: 764pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock26,097	650 V	35A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	16 µA @ 650 V	764pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC (TO-220-2)	-55°C ~ 175°C
CRG09-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
JAN1N6657R	Microchip Technology	DIODE GEN PURP 100V 15A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	Package: -	Request a Quote	100 V	15A	1.2 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	150pF @ 10V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
SMBT1201LT1G	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVBASH19MX2WT5G	onsemi	100V & 200V SW DIODE IN X2DFNW2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	120 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	3pF @ 0V, 1MHz	Surface Mount, Wettable Flank	2-XDFN	2-X2DFNW (1x0.6)	-55°C ~ 175°C
1N4004GP-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-41, Axial Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 400 V	-	Through Hole	DO-204AC, DO-41, Axial	DO-204AC (DO-41)	-50°C ~ 175°C
JANS1N6864	Microchip Technology	DIODE SCHOTTKY 80V 3A B AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18 mA @ 80 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	80 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 80 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 125°C