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Microsemi Corporation |
DIODE GEN 10KV 100MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 10000V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 10V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 10000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: S, Axial
- Supplier Device Package: S, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: S, Axial |
Stock5,552 |
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10000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 250V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock4,448 |
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250V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 200V 5A TO220D
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 20µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220D
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-3 Full Pack |
Stock3,440 |
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200V | 5A (DC) | 980mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 200V | - | Through Hole | TO-220-3 Full Pack | TO-220D | -40°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN REV 200V 100A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 24mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock5,072 |
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200V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 24mA @ 200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 85A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock3,024 |
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100V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 16A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.23V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12mA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock4,336 |
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1000V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 10A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 35V
- Capacitance @ Vr, F: 700pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-216AA |
Stock5,088 |
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40V | 10A | 490mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 35V | 700pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock2,080 |
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100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock3,056 |
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600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AC, SMA |
Stock540,000 |
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30V | 1A | 410mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 30V 200MA 0503
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0503 (1308 Metric)
- Supplier Device Package: 0503/SOD-723F
- Operating Temperature - Junction: 125°C (Max)
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Package: 0503 (1308 Metric) |
Stock7,424 |
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30V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 0503 (1308 Metric) | 0503/SOD-723F | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 60V 600MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 600mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 100nA @ 60V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock7,808 |
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60V | 600mA (DC) | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 60V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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IXYS |
DIODE SCHOTTKY 100V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock9,420 |
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100V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,096 |
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40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A MICROSMP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MicroSMP |
Stock3,820,344 |
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40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 75pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock5,984 |
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400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 100V 75MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 75mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 10pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123 |
Stock47,076 |
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100V | 75mA | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 75V | 10pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
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Solid State Inc. |
DIODE GEN PURP 250V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 250 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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250 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 250 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Microchip Technology |
DIODE GEN PURP 75V 200MA D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 2.8pF @ 1.5V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Panjit International Inc. |
DIODE GEN PURP 1KV 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 1000 V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V 240A PRM1-1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 240 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6 mA @ 150 V
- Capacitance @ Vr, F: 4700pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: HALF-PAK
- Supplier Device Package: PRM1-1 (Half Pak Module)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock72 |
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150 V | 240A | 1.07 V @ 240 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6 mA @ 150 V | 4700pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 70 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
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70 V | 3A | 790 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 70 V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
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Micro Commercial Co |
DIODE SCHOTTKY 60V 3A DO221AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SMA-FL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock29,676 |
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60 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTT 40V 120MA SOT23-3-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 120mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-3
- Operating Temperature - Junction: 150°C
|
Package: - |
Request a Quote |
|
40 V | 120mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 30 V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-3 | 150°C |
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SMC Diode Solutions |
40V, 2A, SMA, DIODE SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 28pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock11,634 |
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40 V | 2A | 550 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 28pF @ 5V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |
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WeEn Semiconductors |
WNSC2D021200D/TO252/REEL 13" Q1
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: 95pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
|
1200 V | 2A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 95pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 5A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock1,347 |
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60 V | 5A | 740 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 150V 60A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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150 V | 60A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 175°C |