Page 755 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SS36HE-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 3A SOD123HE

Package: SOD-123H

Stock4,064
JANTX1N3766R
Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

Package: DO-203AB, DO-5, Stud

Stock5,824
LLSD103C-13
Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

Package: DO-213AA

Stock2,208
FGP30C-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO204AC

Package: DO-204AC, DO-15, Axial

Stock7,824
MBR3580
GeneSiC Semiconductor

DIODE SCHOTTKY 80V 35A DO4

Package: DO-203AA, DO-4, Stud

Stock2,960
VS-10ETF02STRL-M3
Vishay Semiconductor Diodes Division

DIODE

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,584
VF20120S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 20A ITO220AB

Package: TO-220-3 Full Pack, Isolated Tab

Stock3,136
GPP60B-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600

Package: P600, Axial

Stock2,688
SF5406-TR
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 600V SOD-64

Package: SOD-64, Axial

Stock3,440
STTH8S06B-TR
STMicroelectronics

DIODE GEN PURP 600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,000
AU01AWK
Sanken

DIODE GEN PURP 600V 500MA AXIAL

Package: Axial

Stock2,000
SB320-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO201AD

Package: DO-201AD, Axial

Stock7,920
SK26AHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Package: DO-214AC, SMA

Stock3,440
GL41M-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock151,068
DFLS240-7
Diodes Incorporated

DIODE SCHOTTKY 40V 2A POWERDI123

Package: POWERDI?123

Stock327,144
LS4148-GS18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

Package: DO-213AC, MINI-MELF, SOD-80

Stock108,000
RG 4C
Sanken

DIODE GEN PURP 1KV 2A AXIAL

Package: Axial

Stock58,716
JAN1N4153UR-1-TR
Microchip Technology

DIODE GP 75V 150MA DO213AA

Package: -

Request a Quote
RFV5BM6STL
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252

Package: -

Stock5,763
MUR315S
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 3A DO214AB

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS36HE-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock4,064	60V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
JANTX1N3766R	Microsemi Corporation	DIODE GEN PURP 800V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AB, DO-5, Stud	Stock5,824	800V	35A	2.3V @ 500A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
LLSD103C-13	Diodes Incorporated	DIODE SCHOTTKY 20V 350MA MINMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: Mini MELF Operating Temperature - Junction: -	Package: DO-213AA	Stock2,208	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	Mini MELF	-
FGP30C-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock7,824	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
MBR3580	GeneSiC Semiconductor	DIODE SCHOTTKY 80V 35A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock2,960	80V	35A	840mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-10ETF02STRL-M3	Vishay Semiconductor Diodes Division	DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,584	200V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
VF20120S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 20A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-3 Full Pack, Isolated Tab	Stock3,136	120V	20A	1.12V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 120V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 150°C
GPP60B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	Package: P600, Axial	Stock2,688	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 100V	-	Through Hole	P600, Axial	P600	-55°C ~ 175°C
SF5406-TR	Vishay Semiconductor Diodes Division	DIODE AVAL 3A 600V SOD-64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-64, Axial	Stock3,440	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
STTH8S06B-TR	STMicroelectronics	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,000	600V	8A	3.4V @ 8A	Standard Recovery >500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
AU01AWK	Sanken	DIODE GEN PURP 600V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.7V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock2,000	600V	500mA	1.7V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
SB320-E3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AD, Axial	Stock7,920	20V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SK26AHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,440	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
GL41M-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock151,068	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
DFLS240-7	Diodes Incorporated	DIODE SCHOTTKY 40V 2A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 28pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 125°C	Package: POWERDI?123	Stock327,144	40V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	28pF @ 10V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 125°C
LS4148-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	Package: DO-213AC, MINI-MELF, SOD-80	Stock108,000	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
RG 4C	Sanken	DIODE GEN PURP 1KV 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 500µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock58,716	1000V	2A	3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	500µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
JAN1N4153UR-1-TR	Microchip Technology	DIODE GP 75V 150MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 50 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	75 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	50 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
RFV5BM6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C	Package: -	Stock5,763	600 V	5A	2.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	150°C
MUR315S	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock9,000	150 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 150 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
BAT54WE6327	Infineon Technologies	DIODE SCHOTT 30V 200MA SOT323-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C
RB521S-30G9JTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAT43WS_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock118,053	30 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 30 V	-	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 125°C
SF22-TP	Micro Commercial Co	DIODE GEN PURP 100V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	100 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	60pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 125°C
PMEG3020EGW-QJ	Nexperia USA Inc.	DIODE SCHOTTKY 30V 2A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	60pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
VS-12TQ040-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 15A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,040	40 V	15A	710 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75 mA @ 40 V	900pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SS24F	MDD	DIODE SCHOTTKY 40V 2A SMAF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	160pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 125°C
CDLL6263-TR	Microchip Technology	DIODE SCHOTTKY 16V 33MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	16 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2.2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C