|
|
Comchip Technology |
DIODE GEN PURP 400V 1A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-214AA, SMB |
Stock4,592 |
|
400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-247-2 |
Stock6,000 |
|
1200V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 | -65°C ~ 175°C |
|
|
Powerex Inc. |
DIODE GEN PURP 3.2KV 300A DO200
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3200V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9µs
- Current - Reverse Leakage @ Vr: 50mA @ 3200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: DO-200AA, A-PUK |
Stock4,272 |
|
3200V | 300A | 2.15V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 50mA @ 3200V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 200°C |
|
|
Powerex Inc. |
DIODE GEN PURP 1.5KV 150A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.3µs
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-205AA, DO-8, Stud |
Stock4,512 |
|
1500V | 150A | - | Standard Recovery >500ns, > 200mA (Io) | 2.3µs | - | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 125°C |
|
|
Powerex Inc. |
DIODE GEN PURP 400V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.3µs
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-205AA, DO-8, Stud |
Stock7,216 |
|
400V | 100A | - | Standard Recovery >500ns, > 200mA (Io) | 2.3µs | - | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 125°C |
|
|
IXYS |
DIODE SCHOTTKY 100V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,744 |
|
100V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
|
Microsemi Corporation |
DIODE GEN PURP 800V 3A DO215AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-215AB, SMC Gull Wing
- Supplier Device Package: DO-215AB
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-215AB, SMC Gull Wing |
Stock7,040 |
|
800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-2 |
Stock3,024 |
|
90V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 500µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Axial |
Stock7,888 |
|
600V | 1A | 2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 500MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-213AA (Glass) |
Stock5,264 |
|
150V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
TSC America Inc. |
DIODE, FAST, 1.5A, 100V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock6,880 |
|
100V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-3 |
Stock5,696 |
|
150V | 10A | 980mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 100V 1A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -
|
Package: SOD-123F |
Stock2,816 |
|
100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | SOD-123F | SOD-123F | - |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 60V 2A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -50°C ~ 125°C
|
Package: DO-204AL, DO-41, Axial |
Stock2,656 |
|
60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 125°C |
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 20V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock21,732 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SBR 30V 2A SMA
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock888,000 |
|
30V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
|
NTE Electronics, Inc |
DIODE GEN PURP 600V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
600 V | 12A | 1.26 V @ 38 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 600 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
Microchip Technology |
DIODE GP 660V 1.2A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 660 V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 660 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 660 V | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 1A F1A T&R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AA
- Supplier Device Package: F1A (DO219AA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AA | F1A (DO219AA) | -55°C ~ 150°C |
|
|
Comchip Technology |
DIODE GEN PURP 200V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Stock37,227 |
|
400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
|
Microchip Technology |
DIODE GEN PURP 75V 200MA UB2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: UB2
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | UB2 | -65°C ~ 200°C |
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 40 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 40 V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
Panjit International Inc. |
DIODE GEN PURP 100V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock9,000 |
|
100 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 1 µA @ 100 V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 45V 10A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 45 V
- Capacitance @ Vr, F: 400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock13,185 |
|
45 V | 10A | 700 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | 400pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 150°C |
|
|
NTE Electronics, Inc |
DIODE GEN PURP 1KV 6A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 150 µA @ 1000 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
1000 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 150 µA @ 1000 V | 100pF @ 4V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 200V 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock4,398 |
|
200 V | 15A | 1.02 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay General Semiconductor - Diodes Division |
3A, 150V, DFN3820A TRENCH SKY RE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35 µA @ 150 V
- Capacitance @ Vr, F: 160pF @ 4V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 2-VDFN
- Supplier Device Package: DFN3820A
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
150 V | 1.8A | 970 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35 µA @ 150 V | 160pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -40°C ~ 175°C |