Page 79 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SS2P2LHE3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO220AA

Package: DO-220AA

Stock2,192
MUR550APFG
ON Semiconductor

DIODE GEN PURP 520V 5A DO201AD

Package: DO-201AA, DO-27, Axial

Stock2,976
FR306-T
Diodes Incorporated

DIODE GEN PURP 800V 3A DO201AD

Package: DO-201AD, Axial

Stock2,112
S1KW80KA-5
Semtech Corporation

DIODE GEN PURP 80KV 1.5A MODULE

Package: Module

Stock4,880
2941497
Phoenix Contact

DIODE MODULE

Package: Module

Stock2,176
JANTXV1N6639
Microsemi Corporation

DIODE GEN PURP 75V 300MA AXIAL

Package: D, Axial

Stock6,912
JAN1N5621
Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Package: A, Axial

Stock7,552
VS-8TQ080SHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,744
LSM150GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO215AA

Package: DO-215AA, SMB Gull Wing

Stock7,456
FMN-1056S
Sanken

DIODE GEN PURP 600V 5A TO220-2

Package: TO-220-2 Full Pack

Stock2,240
NRVB5100MFST3G
ON Semiconductor

DIODE SCHOTTKY 100V 5A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock3,456
1N4249GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,248
1N4151TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock3,344
RS2J-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO214AA

Package: DO-214AA, SMB

Stock306,600
STPSC40G12WL
STMicroelectronics

1200 V, 20 A HIGH SURGE SILICON

Package: -

Stock600
NTE5853
NTE Electronics, Inc

DIODE GEN PURP 100V 6A DO4

Package: -

Request a Quote
PCDP2065G1_T0_00001
Panjit International Inc.

DIODE SIL CARB 650V 20A TO220AC

Package: -

Stock6,000
SL1M-AQ
Diotec Semiconductor

DIODE SOD123FL 1000V AECQ101

Package: -

Request a Quote
V10PWM153HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 10A SLIMDPAK

Package: -

Stock13,500
UF1003_HF-A52
Diodes Incorporated

DIODE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS2P2LHE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-220AA	Stock2,192	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
MUR550APFG	ON Semiconductor	DIODE GEN PURP 520V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 520V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 5µA @ 520V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AA, DO-27, Axial	Stock2,976	520V	5A	1.15V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 520V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
FR306-T	Diodes Incorporated	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock2,112	800V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
S1KW80KA-5	Semtech Corporation	DIODE GEN PURP 80KV 1.5A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 80V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1mA @ 80000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: Module	Stock4,880	80000V	1.5A	80V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1mA @ 80000V	-	Chassis Mount	Module	-	-55°C ~ 150°C
2941497	Phoenix Contact	DIODE MODULE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	Package: Module	Stock2,176	-	-	-	-	-	-	-	-	Module	Module	-
JANTXV1N6639	Microsemi Corporation	DIODE GEN PURP 75V 300MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: D, Axial Supplier Device Package: D-Pak Operating Temperature - Junction: -65°C ~ 175°C	Package: D, Axial	Stock6,912	75V	300mA	1.2V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	-	Through Hole	D, Axial	D-Pak	-65°C ~ 175°C
JAN1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock7,552	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-8TQ080SHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,744	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
LSM150GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO215AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-215AA, SMB Gull Wing	Stock7,456	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 50V	-	Surface Mount	DO-215AA, SMB Gull Wing	DO-215AA	-55°C ~ 150°C
FMN-1056S	Sanken	DIODE GEN PURP 600V 5A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2 Full Pack	Stock2,240	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-F2	-40°C ~ 150°C
NRVB5100MFST3G	ON Semiconductor	DIODE SCHOTTKY 100V 5A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	Package: 8-PowerTDFN, 5 Leads	Stock3,456	100V	5A	980mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
1N4249GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C	Package: DO-204AL, DO-41, Axial	Stock5,248	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 160°C
1N4151TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock3,344	50V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
RS2J-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock306,600	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
STPSC40G12WL	STMicroelectronics	1200 V, 20 A HIGH SURGE SILICON Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock600	-	-	-	-	-	-	-	-	-	-	-
NTE5853	NTE Electronics, Inc	DIODE GEN PURP 100V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
PCDP2065G1_T0_00001	Panjit International Inc.	DIODE SIL CARB 650V 20A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 747pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock6,000	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	747pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SL1M-AQ	Diotec Semiconductor	DIODE SOD123FL 1000V AECQ101 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F (SMF) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 1000 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C
V10PWM153HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 10A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: 650pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock13,500	150 V	10A	840 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	650pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
UF1003_HF-A52	Diodes Incorporated	DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
AS1M-HF	Comchip Technology	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock10,137	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
V1F6-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 1A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 270 µA @ 60 V Capacitance @ Vr, F: 135pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	60 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	270 µA @ 60 V	135pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 150°C
RS3000-AP	Micro Commercial Co	DIODE GEN PURP 3KV 200MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4 V @ 500 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 3000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	3000 V	200mA	4 V @ 500 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 3000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
CMR2-10-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 1KV 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 1000 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
V2PL45L-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: 390pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock2,232	45 V	2A	530 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 45 V	390pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 150°C
NRVTS12100PFST3G	onsemi	DIODE SCHOTTKY 100V 12A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 100 V Capacitance @ Vr, F: 930pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock15,000	100 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 100 V	930pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C
JAN1N914UR-TR	Microchip Technology	DIODE GEN PURP 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N5804URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C