Page 81 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

JAN1N6620U
Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Package: SQ-MELF, A

Stock7,744
QRS1450001
Powerex Inc.

DIODE MODULE 1.4KV 250A

Package: Module

Stock7,328
CDBB380-G
Comchip Technology

DIODE SCHOTTKY 80V 3A DO214AA

Package: DO-214AA, SMB

Stock3,888
CRNB15-1200PT
Crydom Co.

DIODE GP 1.2KV 9.5A TO220AB

Package: TO-220-2

Stock4,592
A330B
Powerex Inc.

DIODE STD 1200A 200V DO-200AA

Package: -

Stock5,472
VS-70HFR20M
Vishay Semiconductor Diodes Division

DIODE STD REC 70A DO5

Package: DO-203AB, DO-5, Stud

Stock4,576
VS-42HFR20
Vishay Semiconductor Diodes Division

DIODE 40A BRAZ SQR DO5

Package: DO-203AB, DO-5, Stud

Stock5,504
SF1002GHC0G
TSC America Inc.

DIODE, SUPER FAST, 10A, 100V, 35

Package: TO-220-3

Stock2,256
V10P12-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 120V TO-277A

Package: TO-277, 3-PowerDFN

Stock411,612
ESH3D-M3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Package: DO-214AB, SMC

Stock5,088
VS-3ECH02-M3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A SMC

Package: DO-214AB, SMC

Stock5,856
FR157GHB0G
TSC America Inc.

DIODE, FAST, 1.5A, 1000V, 500NS,

Package: DO-204AC, DO-15, Axial

Stock7,168
SE10FD-M3/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO219AB

Package: DO-219AB

Stock6,592
SR002HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Package: DO-204AL, DO-41, Axial

Stock3,488
CMR2U-02 TR13
Central Semiconductor Corp

DIODE GEN PURP 200V 2A SMB

Package: DO-214AA, SMB

Stock5,216
1N4454TR
Fairchild/ON Semiconductor

DIODE GEN PURP 50V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock100,632
R3000F-TP
Micro Commercial Co

DIODE GEN PURP 3KV 200MA DO15

Package: -

Request a Quote
SDT3A45SA-13
Diodes Incorporated

DIODE SCHOTKY 45V 3A SMA T&R 10K

Package: -

Stock405,198
JANTXV1N4150-1-TR
Microchip Technology

DIODE GEN PURP 50V 200MA DO35

Package: -

Request a Quote
UA1M
SMC Diode Solutions

DIODE AVALANCHE 1KV 1A SMA

Package: -

Stock184,986

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	Package: SQ-MELF, A	Stock7,744	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
QRS1450001	Powerex Inc.	DIODE MODULE 1.4KV 250A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 4mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	Package: Module	Stock7,328	1400V	250A	3.2V @ 250A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	4mA @ 1400V	-	Chassis Mount	Module	Module	-
CDBB380-G	Comchip Technology	DIODE SCHOTTKY 80V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 125°C (Max)	Package: DO-214AA, SMB	Stock3,888	80V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	125°C (Max)
CRNB15-1200PT	Crydom Co.	DIODE GP 1.2KV 9.5A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 125°C	Package: TO-220-2	Stock4,592	1200V	9.5A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AB	-40°C ~ 125°C
A330B	Powerex Inc.	DIODE STD 1200A 200V DO-200AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock5,472	-	-	-	-	-	-	-	-	-	-	-
VS-70HFR20M	Vishay Semiconductor Diodes Division	DIODE STD REC 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock4,576	200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VS-42HFR20	Vishay Semiconductor Diodes Division	DIODE 40A BRAZ SQR DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock5,504	200V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
SF1002GHC0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock2,256	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
V10P12-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 120V TO-277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 820mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock411,612	120V	10A	820mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
ESH3D-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock5,088	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 200V	70pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
VS-3ECH02-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock5,856	200V	3A	900mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 175°C
FR157GHB0G	TSC America Inc.	DIODE, FAST, 1.5A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock7,168	-	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SE10FD-M3/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock6,592	200V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 200V	7.5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SR002HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-204AL, DO-41, Axial	Stock3,488	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
CMR2U-02 TR13	Central Semiconductor Corp	DIODE GEN PURP 200V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock5,216	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	28pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
1N4454TR	Fairchild/ON Semiconductor	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock100,632	50V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
R3000F-TP	Micro Commercial Co	DIODE GEN PURP 3KV 200MA DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 3000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	3000 V	200mA	5 V @ 500 mA	Small Signal =< 200mA (Io), Any Speed	500 ns	5 µA @ 3000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SDT3A45SA-13	Diodes Incorporated	DIODE SCHOTKY 45V 3A SMA T&R 10K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock405,198	45 V	3A	480 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	280 µA @ 45 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JANTXV1N4150-1-TR	Microchip Technology	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
UA1M	SMC Diode Solutions	DIODE AVALANCHE 1KV 1A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 3 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock184,986	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	3 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
1N1198RA	Solid State Inc.	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
FR157G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock37,206	1000 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR107A-G	Comchip Technology	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
UG12J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,970	600 V	12A	2 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
TSS54U	Taiwan Semiconductor Corporation	603, 30V, 0.2A, SCHOTTKY DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 30 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 30 V	10pF @ 1V, 1MHz	Surface Mount	0603 (1608 Metric)	0603	-65°C ~ 125°C
ES1JWF-HF	Comchip Technology	DIODE GEN PURP 600V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.68 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
UF5JFC-C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	5A	2.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	30 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
CDBJSC5650-G	Comchip Technology	DIODE SIL CARBIDE 650V 5A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 430pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,359	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	430pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C