|
|
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: A, Axial |
Stock2,000 |
|
1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 75V 150MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: SC-76, SOD-323 |
Stock5,360 |
|
75V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1300V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 1300V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-201AD, Axial |
Stock7,600 |
|
1300V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1300V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: DO-204AL, DO-41, Axial |
Stock2,720 |
|
600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, HIGH EFFICIENT, 8A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-2 |
Stock5,136 |
|
400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: TO-220-2 Full Pack |
Stock4,080 |
|
20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock3,520 |
|
100V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock2,352 |
|
50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock4,320 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock5,296 |
|
60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 |
Stock13,824 |
|
35V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
Littelfuse Inc. |
DIODE RECTIFIER 75A 1200V TO247A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 3.5V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 650µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-247-2 |
Stock9,456 |
|
1200V | 75A | 3.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 650µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
|
|
Diodes Incorporated |
ULTRAFASTRECOVERYRECTIFIERSOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SOD-123F |
Stock26,448 |
|
200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 14pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
|
|
STMicroelectronics |
DIODE GEN PURP 600V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 175°C (Max)
|
Package: DO-201AD, Axial |
Stock99,552 |
|
600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, 2A, 20V, ES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: eSGA (SOD-123FL)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock17,451 |
|
20 V | 2A | 430 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123F | eSGA (SOD-123FL) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A ITO220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock3,000 |
|
400 V | 20A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
800 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
2A, 60V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 60 V | - | Surface Mount | SOD-123 | Sub SMA | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 400V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
400 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
50NS, 6A, 400V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 64pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock18,000 |
|
400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 64pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | SMPC4.6U | -55°C ~ 175°C |
|
|
onsemi |
REC SMA SPECIAL TR
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 2A DO219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 55 µA @ 100 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock30,000 |
|
100 V | 2A | 830 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 100 V | 150pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
|
|
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Microchip Technology |
STANDARD RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
500 V | 25A | 1.1 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
onsemi |
DIODE AVALANCHE 600V 8A TO220-2L
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
600 V | 8A | 2.1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
2A, 45V, TRENCH SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 45 V
- Capacitance @ Vr, F: 152pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock36,000 |
|
45 V | 2A | 670 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 45 V | 152pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 175°C |
|
|
SMC Diode Solutions |
DIODE GEN PURP 600V 5A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9 µA @ 600 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Stock8,061 |
|
600 V | 5A | 1.2 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 µA @ 600 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 125°C |