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Rohm Semiconductor |
DIODE GEN PURPOSE CPD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,712 |
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- | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 16A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 170pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock7,056 |
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200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 475A B8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4000V
- Current - Average Rectified (Io): 475A
- Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50mA @ 4000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: B-8
- Supplier Device Package: B-8
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: B-8 |
Stock7,824 |
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4000V | 475A | 1.66V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 4000V | - | Chassis, Stud Mount | B-8 | B-8 | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 50V 15MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 15mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 40V
- Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: SOD-123 |
Stock3,296 |
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50V | 15mA (DC) | 950mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.1pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
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Sanken |
DIODE GEN PURP 400V 5A TO220F-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 50µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock5,920 |
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400V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock5,840 |
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100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 70V 70MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 70V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-76, SOD-323 |
Stock2,032 |
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70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 70V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, 1.5A, 600V, AEC-Q101, DO-
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock3,504 |
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600V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 350MA 30V SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 20V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123 |
Stock6,128 |
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30V | 350mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 3A DUAL FLATP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450µA @ 45V
- Capacitance @ Vr, F: 550pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 8-PowerTDFN |
Stock6,544 |
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45V | 6A | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 550pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 16A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.23V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock6,900 |
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400V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 200MA 2DSN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: 7pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-XFDFN
- Supplier Device Package: 2-DSN (0.60x0.30)
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-XFDFN |
Stock5,788,260 |
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30V | 200mA (DC) | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 7pF @ 5V, 1MHz | Surface Mount | 2-XFDFN | 2-DSN (0.60x0.30) | 125°C (Max) |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 200MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 25 V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock19,575 |
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40 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 25 V | 7pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 3A TO39
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 45 V
- Capacitance @ Vr, F: 450pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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45 V | 3A | 680 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 45 V | 450pF @ 5V, 1MHz | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) | -65°C ~ 175°C |
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SemiQ |
DIODE SCHOTTKY 1.2KV 5A TO220-2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
DIODE SCHOTTKY 40V 3A SQ-MELF B
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.6KV 45A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock1,020 |
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1600 V | 45A | 1.16 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Microchip Technology |
POWER SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 45V 16A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 16A | 630 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 45 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 150°C |
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Microchip Technology |
FAST RECOVERY RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 15 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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300 V | 50A | 1.4 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 15 µA @ 300 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
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Diodes Incorporated |
SCHOTTKY RECTIFIER SMC T&R 3K
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 60 V
- Capacitance @ Vr, F: 550pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,835 |
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60 V | 5A | 600 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 60 V | 550pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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500 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 500 V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 85A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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- | 85A | 1.15 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 90pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SIL CARB 650V 6A TO220AC
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 150pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock567 |
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650 V | 6A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 150pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 10A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 10A | 900 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 90V 2A SMBF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 90 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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90 V | 2A | 800 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 90 V | 90pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 200V 275A DO9
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 275A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-9
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: - |
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200 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 200 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -65°C ~ 190°C |