|
|
Diodes Incorporated |
DIODE GEN PURP 800V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-204AL, DO-41, Axial |
Stock6,672 |
|
800V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 150V 3A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock3,568 |
|
150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
|
Semtech Corporation |
DIODE GEN PURP 600V 30A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2000ns
- Current - Reverse Leakage @ Vr: 2µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Solder
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: Module |
Stock2,560 |
|
600V | 30A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2000ns | 2µA @ 600V | - | Solder | Module | - | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 85A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 180°C
|
Package: DO-203AB, DO-5, Stud |
Stock6,880 |
|
800V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
TSC America Inc. |
DIODE, SUPER FAST, 10A, 50V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-3 |
Stock3,456 |
|
50V | 10A | 975mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, HIGH EFFICIENT, 4A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-201AD, Axial |
Stock4,656 |
|
400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SBR 50V 15A POWERDI5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI?5
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: PowerDI? 5 |
Stock6,528 |
|
50V | 15A | 540mV @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 150µA @ 50V | - | Surface Mount | PowerDI? 5 | PowerDI?5 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock2,464 |
|
400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 400V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 400ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Axial |
Stock3,120 |
|
400V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-219AB |
Stock7,168 |
|
30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, FAST, 0.8A, 50V, 150NS, S
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-219AB |
Stock4,192 |
|
50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: DO-219AB |
Stock6,240 |
|
30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
TSC America Inc. |
DIODE, 1A, 800V, DO-204AL (DO-41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AL, DO-41, Axial |
Stock4,304 |
|
800V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SBR 400V 1A POWERDI123
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 50µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: POWERDI?123
- Supplier Device Package: PowerDI? 123
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: POWERDI?123 |
Stock615,900 |
|
400V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Surface Mount | POWERDI?123 | PowerDI? 123 | -65°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 1.2KV 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 1200V
- Capacitance @ Vr, F: 41pF @ 600V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-220-2 |
Stock6,352 |
|
1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 41pF @ 600V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SMA-FL)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
800 V | 1A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 50V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 740 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
50 V | 2A | 740 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 50 V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
30 V | 2A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 180pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 125°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
800 V | 2A | 1.85 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 800 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
75 V | 150mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C
|
Package: - |
Stock3,048 |
|
40 V | 200mA | 550 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C |
|
|
Microchip Technology |
DIODE SCHOTTKY 30V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 30 V
- Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
30 V | 150A | 500 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 7500pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 175°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
90 V | 10A | 850 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 90 V | - | Through Hole | TO-220-2 Isolated Tab | ITO-220AC | -50°C ~ 150°C |
|
|
Powerex Inc. |
DIODE GP 1.6KV 2020A HOCKEY PUCK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 2020A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 7 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: Hockey Puck
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
1600 V | 2020A | - | Standard Recovery >500ns, > 200mA (Io) | 7 µs | 50 mA @ 1600 V | - | Clamp On | DO-200AA, A-PUK | Hockey Puck | -65°C ~ 200°C |
|
|
Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA/DO-214AC
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | - | Surface Mount | DO-214AC, SMA | SMA/DO-214AC | -50°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 40V 2A SMBF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 98pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 98pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
50NS, 5A, 200V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock9,000 |
|
200 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |