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Microsemi Corporation |
DIODE MODULE 150V 240A HALF-PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 8mA @ 150V
- Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: HALF-PAK
- Supplier Device Package: HALF-PAK
- Operating Temperature - Junction: -
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Package: HALF-PAK |
Stock5,184 |
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150V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 150V | 6000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
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NXP |
DIODE GEN PURP 1.2KV 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 135ns
- Current - Reverse Leakage @ Vr: 1mA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock6,752 |
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1200V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 1mA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 15MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 15mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 30V
- Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: SOD-123 |
Stock5,776 |
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40V | 15mA (DC) | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
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Infineon Technologies Industrial Power and Controls Americas |
DIODE FAST 4500V 230A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,816 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 100A ADDAPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: ADD-A-PAK (3)
- Supplier Device Package: ADD-A-PAK?
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: ADD-A-PAK (3) |
Stock3,248 |
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800V | 100A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK? | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 300MA B-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 500nA @ 150V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock2,640 |
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150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE STD RECOVERY 95A DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 267A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock6,288 |
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1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
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TSC America Inc. |
DIODE, SUPER FAST, 4A, 100V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,024 |
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100V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock5,344 |
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90V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 90V DO-214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock2,864 |
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90V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,352 |
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150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 400V DO-214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 3µA @ 400V
- Capacitance @ Vr, F: 11pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock4,480 |
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400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 3µA @ 400V | 11pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: 6pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock3,136 |
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1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 1000V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-214AC, SMA |
Stock6,816 |
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40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 125°C (Max) |
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TSC America Inc. |
DIODE, FAST, 0.5A, 800V, 500NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock6,064 |
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800V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 200MA MICMELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 25V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: MicroMELF
- Operating Temperature - Junction: 175°C (Max)
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Package: 2-SMD, No Lead |
Stock2,224 |
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35V | 200mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 25V | 4pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | MicroMELF | 175°C (Max) |
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TSC America Inc. |
DIODE, SWITCHING & ARRAY, 0.2A,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100nA @ 100V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock3,824 |
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100V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 100V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 200MA 2DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 575mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 30V
- Capacitance @ Vr, F: 20pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-UFDFN
- Supplier Device Package: X1-DFN1006-2
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: 2-UFDFN |
Stock8,282,280 |
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30V | 200mA (DC) | 575mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 150µA @ 30V | 20pF @ 0V, 1MHz | Surface Mount | 2-UFDFN | X1-DFN1006-2 | -65°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 5A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 220µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AB, SMC |
Stock632,640 |
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60V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | DO-214AB, SMC | SMC | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock594 |
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1200 V | 60A | 3.15 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 1200 V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 5A | 1.2 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 150V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB (MELF, LL41)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
150 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Comchip Technology |
DIODE GEN PURP 1KV 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 5A | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Diotec Semiconductor |
DIODE GEN PURP 600V 3A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 3A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 3 µA @ 600 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 200V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: B, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
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onsemi |
DIODE GEN PURP 400V 4A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
400 V | 4A | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Bourns Inc. |
DIODE GEN PURP 400V 1A 2SMD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -65°C ~ 175°C
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400 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 8pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |