Page 94 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RGP10BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock3,984
1N4004GPEHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock6,000
MBRB735HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,504
ES1DLHRTG
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-219AB

Stock3,344
ES1AHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Package: DO-214AC, SMA

Stock4,432
1N5817HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Package: DO-204AL, DO-41, Axial

Stock3,216
BAV20W-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 250MA SOD123

Package: SOD-123

Stock4,032
VS-1EFU06-M3/I
Vishay Semiconductor Diodes Division

DIODE ULT FAST 1A 600V DO219AB

Package: DO-219AB

Stock6,320
NRVBS540T3G
ON Semiconductor

DIODE SCHOTTKY 40V 5A SMC

Package: DO-214AB, SMC

Stock395,400
STPS2L60ZFY
STMicroelectronics

DIODE SCHOTTKY 60V 2A SOD123F

Package: SOD-123F

Stock24,858
PMEG045V100EPDZ
Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15

Package: 3-SMD, Flat Leads

Stock107,982
PDU620-13
Diodes Incorporated

DIODE GEN PURP 200V 6A POWERDI5

Package: PowerDI? 5

Stock32,520
JANTX1N3673AR
Microchip Technology

DIODE GEN PURP 1KV 12A DO203AA

Package: -

Request a Quote
V5NM153-M3-I
Vishay General Semiconductor - Diodes Division

5A, 150V, DFN3820A TRENCH SKY RE

Package: -

Stock41,820
S2KFL
Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

Package: -

Stock30,000
1N4148WSR13
Diotec Semiconductor

IC

Package: -

Request a Quote
BAS216WT-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote
S8MS-E3-H
Vishay

8A, 1000V, STD RECT , SMC

Package: -

Request a Quote
VS-15ETX06-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Package: -

Stock16,479
JAN1N6305R
Microchip Technology

DIODE GEN PURP 100V 70A DO5

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,984	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4004GPEHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock6,000	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MBRB735HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,504	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
ES1DLHRTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,344	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1AHM2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock4,432	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5817HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-204AL, DO-41, Axial	Stock3,216	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
BAV20W-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	Package: SOD-123	Stock4,032	150V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
VS-1EFU06-M3/I	Vishay Semiconductor Diodes Division	DIODE ULT FAST 1A 600V DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock6,320	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	3µA @ 600V	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
NRVBS540T3G	ON Semiconductor	DIODE SCHOTTKY 40V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 500mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock395,400	40V	5A	500mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
STPS2L60ZFY	STMicroelectronics	DIODE SCHOTTKY 60V 2A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -40°C ~ 175°C	Package: SOD-123F	Stock24,858	60V	2A	750mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	-	Surface Mount	SOD-123F	SOD-123F	-40°C ~ 175°C
PMEG045V100EPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 10A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 490mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17ns Current - Reverse Leakage @ Vr: 50µA @ 10V Capacitance @ Vr, F: 1190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: -55°C ~ 175°C	Package: 3-SMD, Flat Leads	Stock107,982	45V	10A	490mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	17ns	50µA @ 10V	1190pF @ 1V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	-55°C ~ 175°C
PDU620-13	Diodes Incorporated	DIODE GEN PURP 200V 6A POWERDI5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 175°C	Package: PowerDI? 5	Stock32,520	200V	6A	940mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 175°C
JANTX1N3673AR	Microchip Technology	DIODE GEN PURP 1KV 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1000 V	12A	1.35 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
V5NM153-M3-I	Vishay General Semiconductor - Diodes Division	5A, 150V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 290pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock41,820	150 V	1.9A	970 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	290pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
S2KFL	Taiwan Semiconductor Corporation	2A, 800V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock30,000	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
1N4148WSR13	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-55°C ~ 150°C
BAS216WT-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 85 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	85 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
S8MS-E3-H	Vishay	8A, 1000V, STD RECT , SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 1000 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
VS-15ETX06-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock16,479	600 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	32 ns	50 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
JAN1N6305R	Microchip Technology	DIODE GEN PURP 100V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	70A	1.18 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
R306060F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
B320B-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
15SQ100	SMC Diode Solutions	DIODE SCHOTTKY 100V 15A R-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock40,251	100 V	15A	830 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
NTE117	NTE Electronics, Inc	DIODE GEN PURP 600V 750MA DO26 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 750mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AE, DO-26, Axial Supplier Device Package: DO-26 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	750mA	1.2 V @ 500 mA	Standard Recovery >500ns, > 200mA (Io)	-	400 µA @ 600 V	-	Through Hole	DO-204AE, DO-26, Axial	DO-26	-65°C ~ 175°C
STPS2L60AFN	STMicroelectronics	DIODE SCHOTTKY 60V 2A SMAFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAflat Notch Operating Temperature - Junction: 150°C	Package: -	Stock24,354	60 V	2A	600 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMAflat Notch	150°C
RURP1570	Harris Corporation	DIODE AVALANCHE 700V 15A TO220AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Current - Reverse Leakage @ Vr: 100 µA @ 700 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	700 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	100 µA @ 700 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
JANS1N6872UTK2AS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N3291R	Microchip Technology	DIODE GEN PURP 400V 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 400 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C