Page 91 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

JAN1N4459R
Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Package: DO-203AA, DO-4, Stud

Stock5,312
RGP10ME-M3/73
Vishay Semiconductor Diodes Division

DIODE SW 1A 1000V 500NS DO204AL

Package: DO-204AL, DO-41, Axial

Stock4,736
SS1H9HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO214AC

Package: DO-214AC, SMA

Stock2,336
JAN1N6628
Microsemi Corporation

DIODE GEN PURP 660V 1.75A AXIAL

Package: E, Axial

Stock3,936
R5110210XXWA
Powerex Inc.

DIODE GEN PURP 200V 100A DO205AA

Package: DO-205AA, DO-8, Stud

Stock4,032
SCFS12000
Semtech Corporation

DIODE GEN PURP 12KV 1.5A AXIAL

Package: Axial

Stock7,248
1N4594R
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AA

Package: DO-205AA, DO-8, Stud

Stock5,072
VS-10WQ045FNTRHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 45V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,152
VS-8EWL06FNTRR-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,888
DL4933-13
Diodes Incorporated

DIODE GEN PURP 50V 1A MELF

Package: DO-213AB, MELF

Stock2,128
RX 10ZV1
Sanken

DIODE GEN PURP 200V 2A AXIAL

Package: Axial

Stock7,440
BYG24JHE3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A SMA

Package: DO-214AC, SMA

Stock5,440
ES1DLHR3G
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-219AB

Stock6,960
APD240VGTR-E1
Diodes Incorporated

DIODE SCHOTTKY 40V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock5,184
S1MLSHRVG
TSC America Inc.

DIODE, 1.2A, 1000V, AEC-Q101, SO

Package: SOD-123H

Stock6,992
BAV116HWF-7
Diodes Incorporated

DIODE SW 130V 215MA SOD123F

Package: SOD-123F

Stock4,672
1N4148_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock102,606
BAS40LP-7-G
Diodes Incorporated

DIODE SCHOTTKY 40V 200MA 2DFN

Package: -

Request a Quote
RGF1M-7000HE3_B-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO214BA

Package: -

Request a Quote
SM5819PE-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 1A SOD-323HE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N4459R	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock5,312	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
RGP10ME-M3/73	Vishay Semiconductor Diodes Division	DIODE SW 1A 1000V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock4,736	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS1H9HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock2,336	90V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
JAN1N6628	Microsemi Corporation	DIODE GEN PURP 660V 1.75A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: E, Axial	Stock3,936	660V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 600V	-	Through Hole	E, Axial	-	-65°C ~ 175°C
R5110210XXWA	Powerex Inc.	DIODE GEN PURP 200V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock4,032	200V	100A	1.55V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SCFS12000	Semtech Corporation	DIODE GEN PURP 12KV 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 12000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 23.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 12000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial	Stock7,248	12000V	1.5A	23.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 12000V	-	Through Hole	Axial	-	-55°C ~ 150°C
1N4594R	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock5,072	1000V	150A	1.5V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
VS-10WQ045FNTRHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 45V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 760pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,152	45V	10A	630mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	760pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 175°C
VS-8EWL06FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,888	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
DL4933-13	Diodes Incorporated	DIODE GEN PURP 50V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-213AB, MELF	Stock2,128	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
RX 10ZV1	Sanken	DIODE GEN PURP 200V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock7,440	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
BYG24JHE3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,440	600V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DLHR3G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,960	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
APD240VGTR-E1	Diodes Incorporated	DIODE SCHOTTKY 40V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-204AC, DO-15, Axial	Stock5,184	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
S1MLSHRVG	TSC America Inc.	DIODE, 1.2A, 1000V, AEC-Q101, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock6,992	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
BAV116HWF-7	Diodes Incorporated	DIODE SW 130V 215MA SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 130V Current - Average Rectified (Io): 215mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C	Package: SOD-123F	Stock4,672	130V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
1N4148_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock102,606	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAS40LP-7-G	Diodes Incorporated	DIODE SCHOTTKY 40V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 2.3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 30 V	2.3pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	X1-DFN1006-2	-55°C ~ 150°C
RGF1M-7000HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	8.5pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
SM5819PE-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 1A SOD-323HE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323HE Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	Surface Mount	SC-90, SOD-323F	SOD-323HE	-
JAN1N3293R	Microchip Technology	DIODE GEN PURP 600V 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 600 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SCS304AMC	Rohm Semiconductor	DIODE SIL CARB 650V 4A TO220FM Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 200pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	Package: -	Stock2,952	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
PU2BAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 33pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock29,328	100 V	2A	930 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	33pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
PCDD0665GB_L2_00601	Panjit International Inc.	650V/6A IN TO-252AA PACKAGE SILI Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 373pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	6A	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	373pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
EM513-TP	Micro Commercial Co	DIODE GEN PURP 1.6KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
LL5818-L0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
1N6620E3	Microchip Technology	DIODE GEN PURP 200V 1.2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 200 V	-	Through Hole	Axial	A, Axial	-65°C ~ 150°C
SMLWH	Taiwan Semiconductor Corporation	0.8A, 1000V, STANDARD RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock60,000	1000 V	800mA	1.1 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	7pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C