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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO-204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,056 |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 8A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock5,568 |
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30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 1A MELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: MELF
- Operating Temperature - Junction: -60°C ~ 125°C
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Package: DO-213AB, MELF (Glass) |
Stock2,688 |
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30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-213AB, MELF (Glass) | MELF | -60°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 15MA DO35
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 15mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock3,536 |
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60V | 15mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE RECT 1000V 10A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,880 |
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1000V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, 3A, 100V, AEC-Q101, DO-21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock6,704 |
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100V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 1A, 100V, 25N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 50µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock5,824 |
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100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock3,072 |
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200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 350MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 20V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock3,408 |
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30V | 350mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
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Fairchild/ON Semiconductor |
6A 400V ULTRA FAST RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -
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Package: TO-277, 3-PowerDFN |
Stock5,696 |
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- | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA FSC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 15pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, Flat Lead |
Stock185,562 |
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40V | 100mA | 620mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 2A | 1.15 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock18,000 |
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200 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Wolfspeed, Inc. |
DIODE SIL CARB 1.2KV 33A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 712pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock777 |
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1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 712pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 40V 3A SMBFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBflat Notch
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat Notch | 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 3A SLIMSMAW
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 19pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SlimSMAW (DO-221AD)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock43,410 |
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600 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 10 µA @ 600 V | 19pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SlimSMAW (DO-221AD) | -55°C ~ 175°C |
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onsemi |
DIODE SIL CARB 1.2KV 17A TO247-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 17A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 612pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,320 |
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1200 V | 17A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Harris Corporation |
DIODE AVALANCHE 900V 15A TO220AC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 900 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 900 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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900 V | 15A | 3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 100 µA @ 900 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 50V 15A TO277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 320 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock13,455 |
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50 V | 15A | 510 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 320 µA @ 50 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE GEN PURP 100V 200MA SOD523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock29,547 |
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100 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock17,934 |
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60 V | 3A | 750 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 10A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock5,991 |
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40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock16,821 |
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60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,500 |
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2200 V | 30A | 1.26 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 2200 V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 800V 171A PB34-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB34-1
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Request a Quote |
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800 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 800 V | - | Chassis Mount | Module | BG-PB34-1 | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 2.9A SMPD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2.9A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 15 µA @ 600 V
- Capacitance @ Vr, F: 67pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
- Supplier Device Package: SMPD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock17,943 |
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600 V | 2.9A | 1.15 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 15 µA @ 600 V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), Variant | SMPD | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 90 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock13,272 |
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60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 400V 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
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400 V | 25A | 1.2 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |