Page 963 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

MR756-BP
Micro Commercial Co

DIODE GEN 600V 6A LEADED BUTTON

Package: Button, Axial

Stock2,688
1N4004/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock3,024
JAN1N3595-1
Microsemi Corporation

DIODE SW 125V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock4,768
CDLL1A30
Microsemi Corporation

DIODE SCHOTTKY 30V 1A DO213AB

Package: DO-213AB, MELF

Stock2,000
VS-15ETH06HN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Package: TO-220-2

Stock2,800
SFAS802GHMNG
TSC America Inc.

DIODE, SUPER FAST, 8A, 100V, 35N

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,728
CD214C-B350LF
Bourns Inc.

DIODE SCHOTTKY 50V 3A SMC

Package: DO-214AB, SMC

Stock5,296
ES3J M6G
TSC America Inc.

DIODE, SUPER FAST, 3A, 600V, 35N

Package: DO-214AB, SMC

Stock3,936
GP10M-4007-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,544
US1KHM2G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Package: DO-214AC, SMA

Stock5,488
CD214A-R150
Bourns Inc.

DIODE GEN PURP 50V 1A DO214AC

Package: DO-214AC, SMA

Stock4,400
PMEG3005EL,315
Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD882

Package: SOD-882

Stock4,896
VS-400UR120D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 400A DO205

Package: DO-205AB, DO-9, Stud

Stock6,288
DB2G32600L1
Panasonic Electronic Components

DIODE SCHOTTKY 30V 1A 0402

Package: 0402 (1005 Metric)

Stock98,562
HS3B
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AB

Package: -

Request a Quote
S307030F
Microchip Technology

STD RECTIFIER

Package: -

Request a Quote
CMDD6263-TR-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 70V 15MA SOD323

Package: -

Request a Quote
PE4BC
Taiwan Semiconductor Corporation

20NS, 4A, 100V, ULTRA FAST RECOV

Package: -

Stock9,000
SR5010H-AP
Micro Commercial Co

Interface

Package: -

Request a Quote
GP3D008A065C
SemiQ

DIODE SILICON CARBIDE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MR756-BP	Micro Commercial Co	DIODE GEN 600V 6A LEADED BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Leaded Button Operating Temperature - Junction: -65°C ~ 175°C	Package: Button, Axial	Stock2,688	600V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 600V	-	Through Hole	Button, Axial	Leaded Button	-65°C ~ 175°C
1N4004/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,024	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
JAN1N3595-1	Microsemi Corporation	DIODE SW 125V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock4,768	125V	150mA (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
CDLL1A30	Microsemi Corporation	DIODE SCHOTTKY 30V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -	Package: DO-213AB, MELF	Stock2,000	30V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
VS-15ETH06HN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-220-2	Stock2,800	600V	15A	2.2V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
SFAS802GHMNG	TSC America Inc.	DIODE, SUPER FAST, 8A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,728	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
CD214C-B350LF	Bourns Inc.	DIODE SCHOTTKY 50V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock5,296	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 125°C
ES3J M6G	TSC America Inc.	DIODE, SUPER FAST, 3A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,936	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
GP10M-4007-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	Package: DO-204AL, DO-41, Axial	Stock2,544	1000V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
US1KHM2G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,488	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD214A-R150	Bourns Inc.	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock4,400	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
PMEG3005EL,315	Nexperia USA Inc.	DIODE SCHOTTKY 30V 500MA SOD882 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 30pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C (Max)	Package: SOD-882	Stock4,896	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	30pF @ 1V, 1MHz	Surface Mount	SOD-882	DFN1006-2	150°C (Max)
VS-400UR120D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 400A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.62V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AB, DO-9, Stud	Stock6,288	1200V	400A	1.62V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 200°C
DB2G32600L1	Panasonic Electronic Components	DIODE SCHOTTKY 30V 1A 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 440mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 900µA @ 30V Capacitance @ Vr, F: 32pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402 (1005 Metric) Operating Temperature - Junction: 150°C (Max)	Package: 0402 (1005 Metric)	Stock98,562	30V	1A	440mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	900µA @ 30V	32pF @ 10V, 1MHz	Surface Mount	0402 (1005 Metric)	0402 (1005 Metric)	150°C (Max)
HS3B	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S307030F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMDD6263-TR-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 70V 15MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	70 V	15mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
PE4BC	Taiwan Semiconductor Corporation	20NS, 4A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock9,000	100 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	2 µA @ 100 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SR5010H-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 100 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 175°C
GP3D008A065C	SemiQ	DIODE SILICON CARBIDE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NRVBSS26NT3G	onsemi	DIODE SCHOTTKY 60V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	2A	630 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
CMR3U-02M-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
SD125SA45B-T2	SMC Diode Solutions	DIODE SCHOTTKY 45V 15A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V Capacitance @ Vr, F: 800pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	15A	560 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 45 V	800pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 150°C
MUR15120-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1200 V	15A	2.4 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SK85C	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	8A	750 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SD2010S040L3R0	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	3A	420 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 40 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
PMEG120G20ELPX	Nexperia USA Inc.	DIODE SIGE 120V 2A SOD128/CFP5 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Current - Reverse Leakage @ Vr: 30 nA @ 120 V Capacitance @ Vr, F: 75pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max)	Package: -	Stock50,055	120 V	2A	840 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	11 ns	30 nA @ 120 V	75pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C (Max)
D3041N58TXPSA1	Infineon Technologies	DIODE GEN PURP 5.8KV 4090A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5800 V Current - Average Rectified (Io): 4090A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 5800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	5800 V	4090A	1.7 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 5800 V	-	Chassis Mount	DO-200AE	-	-40°C ~ 160°C