Page 975 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1SR153-400T-31
Rohm Semiconductor

DIODE GEN PURP 400V 1A DO204AL

Package: DO-41 Mini, Axial

Stock5,584
MUR140-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AC

Package: DO-204AC, DO-15, Axial

Stock6,544
BAS70FILM
STMicroelectronics

DIODE SCHOTTKY 70V 70MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,584
VS-11DQ04
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1.1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock4,816
VS-APU6006-N3
Vishay Semiconductor Diodes Division

DIODE FRED 30A 600V TO-247

Package: TO-247-3

Stock6,588
FES16AT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 16A TO220AC

Package: TO-220-2

Stock4,896
UPR5E3/TR13
Microsemi Corporation

DIODE GEN PURP 50V 2.5A DO216

Package: DO-216AA

Stock6,112
BYT54A-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 1.25A SOD57

Package: SOD-57, Axial

Stock600,000
SK315B M4G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Package: DO-214AA, SMB

Stock7,168
SBRD10200TR
SMC Diode Solutions

DIODE SCHOTTKY 200V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
SS22S-E3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

Package: DO-214AA, SMB

Stock348,000
SS26LHRQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Package: DO-219AB

Stock7,984
SR115 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-204AL, DO-41, Axial

Stock2,864
BAS381-TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA MICROMLF

Package: 2-SMD, No Lead

Stock7,104
1N4448W-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD123

Package: SOD-123

Stock5,424
BYM10-50-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock4,608
CGRB304-G
Comchip Technology

DIODE GEN PURP 400V 3A DO214AA

Package: DO-214AA, SMB

Stock22,896
JANS1N5417-TR
Microchip Technology

DIODE GEN PURP 200V 3A B AXIAL

Package: -

Request a Quote
NTE6070
NTE Electronics, Inc

DIODE GEN PURP 1.6KV 85A DO5

Package: -

Request a Quote
US1J_R1_00001
Panjit International Inc.

DIODE GEN PURP 600V 1A SMA

Package: -

Stock10,692

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1SR153-400T-31	Rohm Semiconductor	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	Package: DO-41 Mini, Axial	Stock5,584	400V	1A	1.3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
MUR140-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock6,544	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
BAS70FILM	STMicroelectronics	DIODE SCHOTTKY 70V 70MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock5,584	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
VS-11DQ04	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock4,816	40V	1.1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-40°C ~ 150°C
VS-APU6006-N3	Vishay Semiconductor Diodes Division	DIODE FRED 30A 600V TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-247-3	Stock6,588	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
FES16AT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock4,896	50V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
UPR5E3/TR13	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock6,112	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
BYT54A-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 1.25A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.25A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock600,000	50V	1.25A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 50V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SK315B M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,168	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SBRD10200TR	SMC Diode Solutions	DIODE SCHOTTKY 200V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	200V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	150pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
SS22S-E3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock348,000	20V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS26LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,984	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR115 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,864	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS381-TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA MICROMLF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 40V Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock7,104	40V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 40V	1.6pF @ 1V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
1N4448W-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123	Stock5,424	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
BYM10-50-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock4,608	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
CGRB304-G	Comchip Technology	DIODE GEN PURP 400V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	Package: DO-214AA, SMB	Stock22,896	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
JANS1N5417-TR	Microchip Technology	DIODE GEN PURP 200V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
NTE6070	NTE Electronics, Inc	DIODE GEN PURP 1.6KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	Package: -	Request a Quote	1600 V	85A	1.15 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	2 mA @ 1600 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 190°C
US1J_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock10,692	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	17pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
1N4444-TR	Microchip Technology	DIODE GEN PURP REV 70V 200MA DO7 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 7 ns Current - Reverse Leakage @ Vr: 50 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	70 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	7 ns	50 nA @ 50 V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 150°C
BAT46GW-QX	Nexperia USA Inc.	BAT46GW-Q/SOD123/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 250 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.9 ns Current - Reverse Leakage @ Vr: 9 µA @ 100 V Capacitance @ Vr, F: 39pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Package: -	Stock4,500	100 V	250mA	850 mV @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	5.9 ns	9 µA @ 100 V	39pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
SK33A	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	30 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
PG2010_R2_00001	Panjit International Inc.	DIODE GEN PURP 1KV 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
HER604G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	300 V	6A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
1N4608-TR	Microchip Technology	DIODE GEN PURP 85V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 85 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	85 V	200mA	1.1 V @ 400 mA	Small Signal =< 200mA (Io), Any Speed	10 ns	100 µA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
DS4045T	SMC Diode Solutions	45V, 40A, GFM, POWER MODULES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DSC04A065D1-13	Diodes Incorporated	SILICON CARBIDE RECTIFIER TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	4A	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	184pF @ 100mV, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (Type WX)	-55°C ~ 175°C