Page 976 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

HS247180
Microsemi Corporation

DIODE MODULE 180V 240A HALF-PAK

Package: HALF-PAK

Stock3,600
1N4006GP
Fairchild/ON Semiconductor

DIODE GEN PURP 800V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock5,712
60APU06
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

Package: TO-247-3

Stock16,500
B270-13
Diodes Incorporated

DIODE SCHOTTKY 70V 2A SMB

Package: DO-214AA, SMB

Stock3,488
30WQ03FNTRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,608
FESF8GTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock7,872
NS8DT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

Package: TO-220-2

Stock6,240
EK 19V0
Sanken

DIODE SCHOTTKY 90V 1.5A AXIAL

Package: Axial

Stock4,816
SR310HR0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Package: DO-201AD, Axial

Stock2,576
1N6480HE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock4,112
SB007-03Q-TL-E
ON Semiconductor

DIODE SCHOTTKY 30V 70MA 3MCP

Package: SC-70, SOT-323

Stock120,972
CDBFR0130
Comchip Technology

DIODE SCHOTTKY 30V 100MA 1005

Package: 1005 (2512 Metric)

Stock4,224
S1KL R3G
TSC America Inc.

DIODE, 1A, 800V, SUB SMA

Package: DO-219AB

Stock6,480
MUR5010R
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 50A DO5

Package: DO-203AB, DO-5, Stud

Stock6,492
RB055LAM-30TFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDTM

Package: SOD-128

Stock6,944
CDBB260-HF
Comchip Technology

DIODE SCHOTTKY 60V 2A DO214AA

Package: DO-214AA, SMB

Stock3,488
NTE5901
NTE Electronics, Inc

DIODE GEN PURP 400V 16A DO4

Package: -

Request a Quote
RHR1K160
Harris Corporation

DIODE GEN PURP 600V 1A 8SOIC

Package: -

Request a Quote
SE30DT12-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A SMPD

Package: -

Stock4,704
1N5396GP-TP
Micro Commercial Co

DIODE GEN PURP 500V 1.5A DO15

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HS247180	Microsemi Corporation	DIODE MODULE 180V 240A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 180V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	Package: HALF-PAK	Stock3,600	180V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 180V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
1N4006GP	Fairchild/ON Semiconductor	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,712	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
60APU06	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 81ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-247-3	Stock16,500	600V	60A	1.68V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	81ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 175°C
B270-13	Diodes Incorporated	DIODE SCHOTTKY 70V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7mA @ 70V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock3,488	70V	2A	790mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	7mA @ 70V	75pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
30WQ03FNTRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,608	30V	3.5A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
FESF8GTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock7,872	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
NS8DT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock6,240	200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
EK 19V0	Sanken	DIODE SCHOTTKY 90V 1.5A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,816	90V	1.5A	810mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 90V	-	Through Hole	Axial	-	-40°C ~ 150°C
SR310HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock2,576	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N6480HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock4,112	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SB007-03Q-TL-E	ON Semiconductor	DIODE SCHOTTKY 30V 70MA 3MCP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 70mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 15V Capacitance @ Vr, F: 3pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-70, SOT-323	Stock120,972	30V	70mA	550mV @ 70mA	Small Signal =< 200mA (Io), Any Speed	10ns	5µA @ 15V	3pF @ 10V, 1MHz	Surface Mount	SC-70, SOT-323	3-MCP	-55°C ~ 125°C
CDBFR0130	Comchip Technology	DIODE SCHOTTKY 30V 100MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 440mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock4,224	30V	100mA	440mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
S1KL R3G	TSC America Inc.	DIODE, 1A, 800V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock6,480	800V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
MUR5010R	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock6,492	100V	50A	1V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
RB055LAM-30TFTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	Package: SOD-128	Stock6,944	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
CDBB260-HF	Comchip Technology	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-214AA, SMB	Stock3,488	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
NTE5901	NTE Electronics, Inc	DIODE GEN PURP 400V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
RHR1K160	Harris Corporation	DIODE GEN PURP 600V 1A 8SOIC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	2.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	100 µA @ 600 V	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC	-55°C ~ 150°C
SE30DT12-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 30A SMPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 132pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,704	1200 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	3.4 µs	10 µA @ 1200 V	132pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	SMPD	-55°C ~ 175°C
1N5396GP-TP	Micro Commercial Co	DIODE GEN PURP 500V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	500 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 500 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
CD1A20	Microchip Technology	DIODE SCHOTTKY 20V 1A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Surface Mount	Die	Die	-55°C ~ 125°C
NTSV30100SG	onsemi	RECTIFIER DIODE, SCHOTTKY, 1 PHA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
W2340JK150	IXYS	DIODE GEN PURP 1.5KV 2340A W113 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500 V Current - Average Rectified (Io): 2340A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W113 Operating Temperature - Junction: -	Package: -	Request a Quote	1500 V	2340A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Clamp On	DO-200AB, B-PUK	W113	-
SS35-1HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 50V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
38DN06B02ELEMPRXPSA1	Infineon Technologies	DIODE GP 600V 5140A D-ELEM-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5140A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: BG-D-ELEM-1 Operating Temperature - Junction: 180°C (Max)	Package: -	Request a Quote	600 V	5140A	960 mV @ 4500 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 600 V	-	Clamp On	DO-200AA, A-PUK	BG-D-ELEM-1	180°C (Max)
RS1006FL_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock13,161	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
SS26L	Taiwan Semiconductor Corporation	2A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 60 V	-	Surface Mount	SOD-123	Sub SMA	-55°C ~ 150°C
SD103CW_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 20V 350MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock8,502	20 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 10 V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C