Page 997 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SDT10S30
Infineon Technologies

DIODE SCHOTTKY 300V 10A TO220-2

Package: TO-220-2

Stock9,876
DSR6U600D1-13
Diodes Incorporated

DIODE GEN PURP 600V 6A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,208
1N4936GPHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock3,584
30EPH03
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 30A TO247AC

Package: TO-247-2

Stock107,628
JANTXV1N5552
Microsemi Corporation

DIODE GEN PURP 600V 5A AXIAL

Package: B, Axial

Stock7,488
C3D03065E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 650V 11.5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,144
SRA1630 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Package: TO-220-2

Stock2,976
SF1007G C0G
TSC America Inc.

DIODE, SUPER FAST, 10A, 500V, 35

Package: TO-220-3

Stock5,840
MBR1645HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AB

Package: TO-220-3

Stock2,672
ES1DV M2G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 200V, 15N

Package: DO-214AC, SMA

Stock6,864
SS19L MHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Package: DO-219AB

Stock3,520
BAS383-TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 30MA MICROMLF

Package: 2-SMD, No Lead

Stock4,672
BAV21W-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD123

Package: SOD-123

Stock2,384
GP2D012A060A
Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO220-2

Package: TO-220-2

Stock16,464
US1DFA
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 1A SOD123FA

Package: SOD-123W

Stock4,176
V2F22HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2A DO219AB

Package: -

Stock24,543
PMEG3002AESFCYL
Nexperia USA Inc.

PMEG3002AESF - 30V, 0.2A LOW VF

Package: -

Request a Quote
PW4516
Diotec Semiconductor

IC

Package: -

Request a Quote
SB1200AH_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 200V 1A SOD123HE

Package: -

Stock8,085
S2KAH
Taiwan Semiconductor Corporation

1.5A, 800V, STANDARD RECOVERY RE

Package: -

Stock45,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SDT10S30	Infineon Technologies	DIODE SCHOTTKY 300V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 600pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock9,876	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 0V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
DSR6U600D1-13	Diodes Incorporated	DIODE GEN PURP 600V 6A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,208	600V	6A	2.6V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	50µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3	-65°C ~ 175°C
1N4936GPHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,584	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
30EPH03	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 60µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-247-2	Stock107,628	300V	30A	1.25V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	60µA @ 300V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
JANTXV1N5552	Microsemi Corporation	DIODE GEN PURP 600V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock7,488	600V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
C3D03065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 11.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,144	650V	11.5A	1.8V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 650V	155pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
SRA1630 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2	Stock2,976	30V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SF1007G C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 500V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock5,840	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MBR1645HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-3	Stock2,672	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-220-3	TO-220AB	-65°C ~ 150°C
ES1DV M2G	TSC America Inc.	DIODE, ULTRA FAST, 1A, 200V, 15N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock6,864	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	17pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS19L MHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,520	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAS383-TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30MA MICROMLF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 60V Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock4,672	60V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 60V	1.6pF @ 1V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
BAV21W-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 175°C (Max)	Package: SOD-123	Stock2,384	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	175°C (Max)
GP2D012A060A	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: 632pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock16,464	600V	12A	1.65V @ 12A	No Recovery Time > 500mA (Io)	0ns	40µA @ 600V	632pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
US1DFA	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 1A SOD123FA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123W	Stock4,176	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
V2F22HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 200 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock24,543	200 V	2A	870 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 200 V	160pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
PMEG3002AESFCYL	Nexperia USA Inc.	PMEG3002AESF - 30V, 0.2A LOW VF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.37 ns Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: 22pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	200mA	470 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	1.37 ns	30 µA @ 10 V	22pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	150°C
PW4516	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	1600 V	45A	1.1 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1600 V	-	Through Hole	TO-247-2	TO-247	-50°C ~ 175°C
SB1200AH_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.8 µA @ 200 V Capacitance @ Vr, F: 85pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,085	200 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.8 µA @ 200 V	85pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S2KAH	Taiwan Semiconductor Corporation	1.5A, 800V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock45,000	800 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 800 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CMMR1F-06-TR-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock37,065	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
S3DHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
S43120	Microchip Technology	DIODE GP 1.2KV 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1200 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
RF302LAM2STR	Rohm Semiconductor	DIODE GEN PURP 200V 3A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C	Package: -	Stock10,749	200 V	3A	920 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	Surface Mount	SOD-128	PMDTM	150°C
SK310A	SMC Diode Solutions	DIODE SCHOTTKY 100V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 100 V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 100 V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
1N6661-TR	Microchip Technology	DIODE GEN PURP 225V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 225 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	225 V	500mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 225 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
BAV21W-HE3_A-08	Vishay	SWITCHING DIODE GENPURP SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	200 V	300mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
CD214A-FS1K	Bourns Inc.	DIODE GEN PURP 800V 1A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	800 V	1A	2.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 800 V	8pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C