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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2.4A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2.4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock7,856 |
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400V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 400MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 400mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 400mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 30V
- Capacitance @ Vr, F: 20pF @ 25V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -
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Package: SC-76, SOD-323 |
Stock120,000 |
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40V | 400mA (DC) | 500mV @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 30V | 20pF @ 25V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 160ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 |
Stock6,060 |
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400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 3A BPKG
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock6,736 |
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150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,248 |
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2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 20A, 600V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,752 |
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600V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 90pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 12A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-201AD, Axial |
Stock5,904 |
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40V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock2,096 |
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50V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 50V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 2A, 200V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,552 |
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200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4µs
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock674,400 |
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200V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1300V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 1300V
- Capacitance @ Vr, F: 5pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,200 |
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1300V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1300V | 5pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, 1A, 200V, DO-214AA (SMB)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock2,192 |
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200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 200MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 20pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock4,720 |
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40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 25V | 20pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 150°C (Max) |
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GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock14,892 |
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50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 30V 8A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,152 |
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30V | 8A | 490mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 80V 3A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA, HSMB
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AA, SMB |
Stock2,256 |
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80V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 125°C |
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Littelfuse Inc. |
DIODE RECTIFIER 10A 600V ITO220A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 32ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Insulated, TO-220AC |
Stock13,926 |
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600V | 10A | 2.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | ITO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock480,000 |
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600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE GEN PURP 400V 1A R-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-1, Axial
- Supplier Device Package: R-1
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Through Hole | R-1, Axial | R-1 | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 100V 1A SOD323HP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 100 V
- Capacitance @ Vr, F: 95pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: SOD323HP
- Operating Temperature - Junction: 175°C
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Package: - |
Stock13,500 |
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100 V | 1A | 795 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 100 V | 95pF @ 1V, 1MHz | Surface Mount | 2-SMD, Flat Lead | SOD323HP | 175°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 70V 15MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 15mA
- Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 50 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
|
70 V | 15mA | 410 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 1A US2H
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 60 V
- Capacitance @ Vr, F: 130pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: US2H
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock62,391 |
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60 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 60 V | 130pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C (Max) |
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Diotec Semiconductor |
DIODE SUPERFAST MINIMELF 800V
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA, MINI-MELF
- Operating Temperature - Junction: -50°C ~ 175°C
|
Package: - |
Request a Quote |
|
800 V | 1A | 1.8 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 1A SMAF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 20 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock5,679 |
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20 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | 50pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
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Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA, MINI-MELF
- Operating Temperature - Junction: -50°C ~ 175°C
|
Package: - |
Request a Quote |
|
400 V | 500mA | 1.2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 400 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 200V 3A B AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: B, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 20V 500MA 2DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: 2-DFN (1x0.6)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock67,902 |
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20 V | 500mA | 480 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | Surface Mount | 0402 (1006 Metric) | 2-DFN (1x0.6) | -55°C ~ 150°C |