|
|
Infineon Technologies |
TRANS 2PNP PREBIAS 0.25W SOT363
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock4,848 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | - | 200MHz | 250mW | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.5W SOT563
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock16,608 |
|
100mA | 50V | 2.2k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
ON Semiconductor |
TRANS 2PNP PREBIAS 0.5W SOT563
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock4,064 |
|
100mA | 50V | 4.7k | 47k | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Diodes Incorporated |
TRANS 2NPN PREBIAS 0.2W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,736 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Infineon Technologies |
TRANS NPN/PNP PREBIAS SOT363
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock3,248 |
|
100mA | 50V | 22k | 22k | 50 @ 5mA, 5V | 300mV @ 500µA, 10mA | - | 130MHz | 250mW | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
ON Semiconductor |
TRANS 2PNP PREBIAS 0.5W SOT563
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock6,832 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Rohm Semiconductor |
TRANS 2PNP PREBIAS 0.15W EMT6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock1,975,488 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Nexperia USA Inc. |
TRANS 2PNP PREBIAS 0.3W SOT666
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: SOT-563, SOT-666 |
Stock6,080 |
|
20mA | 50V | 100k | 100k | 80 @ 5mA, 5V | 150mV @ 250µA, 5mA | 1µA | - | 300mW | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
Nexperia USA Inc. |
TRANS 2NPN PREBIAS 0.3W SOT666
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: SOT-563, SOT-666 |
Stock5,360 |
|
100mA | 50V | 22k | 47k | 80 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 300mW | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.25W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,824 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 250mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
Nexperia USA Inc. |
TRANS 2PNP PREBIAS 0.3W 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,720 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Rohm Semiconductor |
TRANS 2NPN PREBIAS 0.15W EMT6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock319,176 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN/PNP 6TSSOP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,440 |
|
100mA | 50V | 10k | 47k | 100 @ 5mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Rohm Semiconductor |
TRANS NPN/PNP PREBIAS 0.15W EMT6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock521,040 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Rohm Semiconductor |
TRANS 2NPN PREBIAS 0.3W SMT5
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMT5
|
Package: SC-74A, SOT-753 |
Stock36,000 |
|
100mA | 50V | 4.7k | - | 100 @ 1mA, 5V | 150mV @ 250µA, 5mA | 500nA (ICBO) | 250MHz | 300mW | Surface Mount | SC-74A, SOT-753 | SMT5 |
|
|
Nexperia USA Inc. |
TRANS NPN PREBIAS/PNP 6TSSOP
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 100MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock22,290 |
|
100mA | 50V, 40V | 22k | 47k | 80 @ 5mA, 5V / 120 @ 1mA, 6V | 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA | 1µA | 100MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Rohm Semiconductor |
TRANS PREBIAS DUAL NPN SMT6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
|
Package: SC-74, SOT-457 |
Stock14,664 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 300mW | Surface Mount | SC-74, SOT-457 | SMT6 |
|
|
Rohm Semiconductor |
TRANS PREBIAS DUAL PNP UMT6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock4,603,368 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN MINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: Mini6-G4-B
|
Package: SOT-23-6 |
Stock21,918 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 300mW | Surface Mount | SOT-23-6 | Mini6-G4-B |
|
|
Diodes Incorporated |
TRANS 2NPN PREBIAS 0.2W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock180,000 |
|
100mA | 50V | 22k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock24,000 |
|
100mA | 50V | 47kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Request a Quote |
|
100mA | 50V | 47kOhms | 47kOhms | 80 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 230MHz, 180MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 2PNP 80V 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Stock54,000 |
|
100mA | 80V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 150MHz | 350mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz, 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 80V | 2.2kOhms | 47kOhms | 100 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 170MHz, 150MHz | 350mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Nexperia USA Inc. |
TRANS PREBIAS
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Request a Quote |
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100mA | 50V | 10kOhms | 10kOhms | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 180MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock22,980 |
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100mA | 50V | 47kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz, 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock8,910 |
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100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock9,000 |
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100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |