Page 23 - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products

BCR 22PN H6727
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Package: 6-VSSOP, SC-88, SOT-363

Stock7,888
BCR116SE6327BTSA1
Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

Package: 6-VSSOP, SC-88, SOT-363

Stock2,528
RN2971FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock3,600
NSM46211DW6T1G
ON Semiconductor

TRANS NPN PREBIAS/NPN SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock5,584
NSTB1002DXV5T1
ON Semiconductor

TRANS NPN PREBIAS/PNP 0.5W SOT55

Package: SOT-553

Stock44,280
NSBA114EDXV6T5
ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

Package: SOT-563, SOT-666

Stock2,192
PBLS1504V,115
NXP

TRANS NPN PREBIAS/PNP SOT666

Package: SOT-563, SOT-666

Stock4,224
EMF5XV6T5G
ON Semiconductor

TRANS NPN PREBIAS/PNP SOT563

Package: SOT-563, SOT-666

Stock6,080
NSBC144WDP6T5G
ON Semiconductor

TRANS 2NPN PREBIAS 0.408W SOT963

Package: SOT-963

Stock2,032
ADC124EUQ-7
Diodes Incorporated

PREBIAS TRANSISTOR SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock3,104
PBLS1502Y,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock5,616
PQMB11Z
Nexperia USA Inc.

TRANS PNP/PNP RET 6DFN

Package: 6-XFDFN Exposed Pad

Stock7,360
XN0411600L
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI6

Package: SOT-23-6

Stock2,624
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock6,288
UP04211G0L
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI6

Package: SOT-563, SOT-666

Stock84,672
IMH14AT108
Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

Package: SC-74, SOT-457

Stock53,844
UMC2NTR
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

Package: 5-TSSOP, SC-70-5, SOT-353

Stock2,958,000
RN2902FE,LF(CT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W ES6

Package: SOT-563, SOT-666

Stock31,848
UMH13N-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
RN2714-LF
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 22PN H6727	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Package: 6-VSSOP, SC-88, SOT-363	Stock7,888	100mA	50V	22k	22k	50 @ 5mA, 5V	300mV @ 500µA, 10mA	-	130MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BCR116SE6327BTSA1	Infineon Technologies	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Package: 6-VSSOP, SC-88, SOT-363	Stock2,528	100mA	50V	4.7k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	150MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
RN2971FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock3,600	100mA	50V	10k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
NSM46211DW6T1G	ON Semiconductor	TRANS NPN PREBIAS/NPN SOT363 Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 65V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 200 @ 2mA, 5V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock5,584	100mA	50V, 65V	10k	10k	35 @ 5mA, 10V / 200 @ 2mA, 5V	250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA	500nA	-	230mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NSTB1002DXV5T1	ON Semiconductor	TRANS NPN PREBIAS/PNP 0.5W SOT55 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 200mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	Package: SOT-553	Stock44,280	100mA, 200mA	50V, 40V	47k	47k	80 @ 5mA, 10V / 100 @ 1mA, 10V	250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA	500nA	250MHz	500mW	Surface Mount	SOT-553	SOT-553
NSBA114EDXV6T5	ON Semiconductor	TRANS 2PNP PREBIAS 0.5W SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock2,192	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
PBLS1504V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock4,224	100mA, 500mA	50V, 15V	22k	22k	60 @ 5mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
EMF5XV6T5G	ON Semiconductor	TRANS NPN PREBIAS/PNP SOT563 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock6,080	100mA, 500mA	50V, 12V	47k	47k	80 @ 5mA, 10V / 270 @ 10mA, 2V	250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBC144WDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.408W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock2,032	100mA	50V	47k	22k	80 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
ADC124EUQ-7	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k, 22k Resistor - Emitter Base (R2) (Ohms): 22k, 22k DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 270mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,104	100mA	50V	22k, 22k	22k, 22k	-	-	-	250MHz	270mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PBLS1502Y,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 6TSSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock5,616	100mA, 500mA	50V, 15V	4.7k	4.7k	30 @ 10mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PQMB11Z	Nexperia USA Inc.	TRANS PNP/PNP RET 6DFN Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 230mW Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock7,360	100mA	50V	10k	10k	30 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	180MHz	230mW	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
XN0411600L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP MINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1	Package: SOT-23-6	Stock2,624	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Surface Mount	SOT-23-6	MINI6-G1
RN1965FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock6,288	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
UP04211G0L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SSMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F2	Package: SOT-563, SOT-666	Stock84,672	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SOT-563, SOT-666	SSMini6-F2
IMH14AT108	Rohm Semiconductor	TRANS PREBIAS DUAL NPN SMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	Package: SC-74, SOT-457	Stock53,844	100mA	50V	47k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	-	250MHz	300mW	Surface Mount	SC-74, SOT-457	SMT6
UMC2NTR	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.15W UMT5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	Package: 5-TSSOP, SC-70-5, SOT-353	Stock2,958,000	30mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	UMT5
RN2902FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock31,848	100mA	50V	10k	10k	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	SOT-563, SOT-666	ES6
UMH13N-TP	Micro Commercial Co	Interface Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhm Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	100mA	50V	4.7kOhm	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN2714-LF	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	Package: -	Request a Quote	100mA	50V	1kOhms	10kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
NSBC114TDXV6	onsemi	TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	10kOhms	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBC114YPDXV6T5	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 256mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	10kOhms	47kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	256mW	Surface Mount	SOT-563, SOT-666	SOT-563
RN2910-LF-CT	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR4.7KOHM Q1BERINF. Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	Package: -	Stock9,000	100mA	50V	4.7kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	SC-61AA	SMQ
NHUMH2F	Nexperia USA Inc.	TRANS PREBIAS 2NPN 80V 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 170MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Stock60,000	100mA	80V	47kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	170MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMB3FHAT2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: -	Stock23,982	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
NSBC143EDXV6T1G	onsemi	TRANS PREBIAS 2NPN 50V SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock27,000	100mA	50V	4.7kOhms	4.7kOhms	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
EMD9-TPQ2	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	10kOhms	-	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
UMD12NFHATR	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.15W UMT6 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-