|
|
Infineon Technologies |
TRANSISTOR NPN RF 20V SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
- Gain: -
- Power - Max: 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,016 |
|
20V | 800MHz | 3dB @ 100MHz | - | 280mW | 40 @ 20mA, 10V | 35mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
|
|
Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 15.5dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 90mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
Package: SC-70, SOT-323 |
Stock6,336 |
|
12V | 6GHz | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz | 10.5dB ~ 15.5dB | 300mW | 70 @ 30mA, 8V | 90mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 |
|
|
Microsemi Corporation |
TRANS NPN 15V 0.04A TO-72
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
- Gain: 12.5dB ~ 21dB @ 450MHz
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-72-3 Metal Can
- Supplier Device Package: TO-72
|
Package: TO-72-3 Metal Can |
Stock5,568 |
|
15V | 500MHz | 4.5dB @ 450MHz | 12.5dB ~ 21dB @ 450MHz | 200mW | 30 @ 3mA, 1V | 40mA | -65°C ~ 200°C (TJ) | Through Hole | TO-72-3 Metal Can | TO-72 |
|
|
Microsemi Corporation |
TRANS RF BIPO 175W 5.4A M214
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 175W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 5.4A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M214
- Supplier Device Package: M214
|
Package: M214 |
Stock5,888 |
|
65V | 1.03GHz ~ 1.09GHz | - | 9dB | 175W | 10 @ 1A, 5V | 5.4A | 200°C (TJ) | Chassis Mount | M214 | M214 |
|
|
Microsemi Corporation |
TRANS BIPO NPN M115
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 10W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M115
- Supplier Device Package: M115
|
Package: M115 |
Stock7,248 |
|
3.5V | 1.025GHz ~ 1.15GHz | - | 9dB | 10W | 30 @ 100mA, 5V | 250mA | 200°C (TJ) | Chassis Mount | M115 | M115 |
|
|
CEL |
DISCRETE RF DIODE
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.3V
- Frequency - Transition: 5.8GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
- Gain: 14dB ~ 21dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M04
|
Package: SOT-343F |
Stock5,280 |
|
4.3V | 5.8GHz | 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz | 14dB ~ 21dB | 125mW | 200 @ 5mA, 2V | 30mA | 150°C (TJ) | Surface Mount | SOT-343F | M04 |
|
|
Microsemi Corporation |
TRANS NPN 16V 150MA MACRO X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.5dB
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
|
Package: Micro-X ceramic (84C) |
Stock4,992 |
|
16V | 870MHz | - | 9.5dB | 2W | 30 @ 50mA, 10V | 150mA | - | Surface Mount | Micro-X ceramic (84C) | Micro-X ceramic (84C) |
|
|
ON Semiconductor |
TRANS NPN RF BIPO 20V SC-59
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,840 |
|
20V | 150MHz | - | - | 200mW | 110 @ 1mA, 10V | 30mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
|
|
ON Semiconductor |
TRANSISTOR NPN RF BIPO 12V TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 200W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,136 |
|
12V | 2GHz | - | - | 200W | 25 @ 3mA, 1V | 50mA | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Broadcom Limited |
TRANS NPN BIPO 12V 50MA SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
- Gain: 11dB ~ 15.5dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
|
Package: TO-253-4, TO-253AA |
Stock2,704 |
|
12V | - | 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz | 11dB ~ 15.5dB | 225mW | 30 @ 5mA, 5V | 50mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143 |
|
|
CEL |
RF TRANSISTOR NPN SOT-523
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 11dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
|
Package: SOT-523 |
Stock5,296 |
|
6V | 12GHz | 1.5dB @ 2GHz | 11dB | 125mW | 75 @ 10mA, 3V | 30mA | 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Fairchild/ON Semiconductor |
TRANSISTOR RF NPN SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
- Current - Collector (Ic) (Max): 10mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock432,000 |
|
15V | 600MHz | - | - | 225mW | 30 @ 3mA, 1V | 10mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 30MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 850MHz
- Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
- Gain: 15dB ~ 23dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,088,000 |
|
20V | 850MHz | 6.5dB @ 200MHz | 15dB ~ 23dB | 150mW | 120 @ 5mA, 10V | 30mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
CEL |
RF DUAL TRANSISTORS NPN SOT-363
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
- Gain: 7.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock22,512 |
|
10V | 8GHz | 1.9dB @ 2GHz | 7.5dB | 200mW | 80 @ 5mA, 3V | 35mA | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
NXP |
TRANS RF NPN 15V 9GHZ SOT343N
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
- Gain: -
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
- Current - Collector (Ic) (Max): 120mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
|
Package: SOT-343 Reverse Pinning |
Stock5,312 |
|
15V | 9GHz | 1.3dB ~ 1.8dB @ 900MHz | - | 500mW | 100 @ 40mA, 8V | 120mA | 175°C (TJ) | Surface Mount | SOT-343 Reverse Pinning | 4-SO |
|
|
Infineon Technologies |
TRANS RF NPN 6V 35MA TSFP-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
- Gain: 15.5dB
- Power - Max: 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
|
Package: SOT-723 |
Stock5,824 |
|
9V | 14GHz | 1dB @ 1.8GHz | 15.5dB | 210mW | 90 @ 15mA, 3V | 35mA | 150°C (TJ) | Surface Mount | SOT-723 | PG-TSFP-3 |
|
|
Microsemi Corporation |
TRANS RF BIPO 1700W 40A 55KT1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB ~ 6.5dB
- Power - Max: 1700W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KT
- Supplier Device Package: 55KT
|
Package: 55KT |
Stock5,776 |
|
55V | 1.025GHz ~ 1.15GHz | - | 6dB ~ 6.5dB | 1700W | 10 @ 500mA, 5V | 40A | 200°C (TJ) | Chassis Mount | 55KT | 55KT |
|
|
NXP |
TRANS RF NPN 12V 40MA SOT-143R
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 16.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock7,888 |
|
12V | 11GHz | 1.1dB @ 1.8GHz | 16.5dB | 450mW | 60 @ 10mA, 8V | 40mA | -40°C ~ 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
|
|
NXP |
TRANS RF NPN 5V 2.3GHZ SOT23-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 2.3GHz
- Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
- Gain: -
- Power - Max: 30mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
- Current - Collector (Ic) (Max): 6.5mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,736 |
|
5V | 2.3GHz | 5.5dB @ 500MHz | - | 30mW | 20 @ 1mA, 1V | 6.5mA | 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
NXP |
TRANS NPN 4.5V 17GHZ SOT343R
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
- Gain: 20dB ~ 22dB
- Power - Max: 16mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
- Current - Collector (Ic) (Max): 3.6mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
|
Package: SC-82A, SOT-343 |
Stock2,208 |
|
4.5V | 17GHz | 1dB ~ 1.6dB @ 900MHz ~ 2GHz | 20dB ~ 22dB | 16mW | 50 @ 3mA, 2V | 3.6mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | CMPAK-4 |
|
|
M/A-Com Technology Solutions |
TRANS RF NPN 35V 20A 211-11
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 13dB
- Power - Max: 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 211-11, Style 2
- Supplier Device Package: 211-11, Style 2
|
Package: 211-11, Style 2 |
Stock6,252 |
|
35V | - | - | 13dB | 150W | 15 @ 5A, 5V | 20A | - | Chassis Mount | 211-11, Style 2 | 211-11, Style 2 |
|
|
Central Semiconductor Corp |
TRANS NPN 12V 0.05A TO-72
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
- Gain: 15dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
|
Package: TO-206AF, TO-72-4 Metal Can |
Stock17,928 |
|
12V | 2GHz | 4.5dB @ 200MHz | 15dB | 200mW | 25 @ 3mA, 1V | 50mA | -65°C ~ 200°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-72 |
|
|
Toshiba Semiconductor and Storage |
TRANS RF NPN 12V 1MHZ SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
- Gain: -
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock22,500 |
|
12V | 7GHz | 1dB @ 500MHz | - | 100mW | 80 @ 10mA, 5V | 30mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
|
|
NXP |
TRANS RF NPN 12V 50MA SOT-143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
- Gain: 21dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock90,948 |
|
12V | 11GHz | 0.7dB @ 900MHz | 21dB | 450mW | 60 @ 15mA, 8V | 50mA | -40°C ~ 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
|
|
Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
MACOM Technology Solutions |
TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
RF TRANSISTOR TO-39
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
40V | 500MHz | - | - | - | 10 @ 50mA, 5V | 400mA | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |