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CEL |
SAME AS 2SC3357 SAME AS 2SC3357
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6.5GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 9dB
- Power - Max: 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: TO-243AA |
Stock7,488 |
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12V | 6.5GHz | 1.1dB @ 1GHz | 9dB | 1.2W | 125 @ 20mA, 10V | 100mA | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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CEL |
RF TRANSISTOR NPN SOT-89
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: 10dB
- Power - Max: 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: -
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Package: TO-243AA |
Stock2,368 |
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12V | 6GHz | 3.5dB @ 1GHz | 10dB | 1.8W | 50 @ 50mA, 5V | 150mA | 150°C (TJ) | Surface Mount | TO-243AA | - |
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ON Semiconductor |
TRANSISTOR NPN BIPO UHF SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock2,544 |
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15V | - | - | - | - | - | 50mA | - | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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Ampleon USA Inc. |
TRANSISTOR RF POWER SOT423A
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 75V
- Frequency - Transition: 3.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 500W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
- Current - Collector (Ic) (Max): 12A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-423A
- Supplier Device Package: CDFM2
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Package: SOT-423A |
Stock5,776 |
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75V | 3.1GHz | - | 7dB | 500W | 40 @ 3A, 5V | 12A | 200°C (TJ) | Surface Mount | SOT-423A | CDFM2 |
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CEL |
RF DUAL TRANSISTORS NPN SOT-363
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 9dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,584 |
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12V | 4.5GHz | 1.2dB @ 1GHz | 9dB | 200mW | 70 @ 7mA, 3V | 100mA | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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STMicroelectronics |
TRANSISTOR NPN RF UHF 4LEAD
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 58W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 2.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: M122
- Supplier Device Package: M122
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Package: M122 |
Stock4,496 |
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16V | - | - | 7dB | 58W | 10 @ 1A, 5V | 2.5A | 200°C (TJ) | Chassis, Stud Mount | M122 | M122 |
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STMicroelectronics |
TRANS NPN RF MICROWAVE VHF M113
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 70W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: M113
- Supplier Device Package: M113
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Package: M113 |
Stock6,704 |
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16V | - | - | 9dB | 70W | 20 @ 250mA, 5V | 8A | - | Surface Mount | M113 | M113 |
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Fairchild/ON Semiconductor |
TRANSISTOR RF NPN 20V TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,792 |
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20V | - | - | - | 350mW | 67 @ 1mA, 10V | 30mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Broadcom Limited |
IC TRANS NPN BIPOLAR SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
- Gain: 13.5dB ~ 15dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3
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Package: SC-70, SOT-323 |
Stock806,088 |
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5.5V | - | 1dB ~ 1.3dB @ 900MHz | 13.5dB ~ 15dB | 200mW | 70 @ 5mA, 2.7V | 40mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 |
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Intersil |
IC TRANS ARRAY NPN/PNP 16-SOIC
- Transistor Type: 3 NPN + 2 PNP
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock163,080 |
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12V, 15V | 8GHz, 5.5GHz | 3.5dB @ 1GHz | - | 150mW | 40 @ 10mA, 2V / 20 @ 10mA, 2V | 65mA | 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Microsemi Corporation |
TRANS RF BIPO 1944W 50A 55SM1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 9dB
- Power - Max: 1944W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 50A
- Operating Temperature: 230°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55SM
- Supplier Device Package: 55SM
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Package: 55SM |
Stock2,544 |
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65V | 1.03GHz | - | 8dB ~ 9dB | 1944W | 20 @ 5A, 5V | 50A | 230°C (TJ) | Chassis Mount | 55SM | 55SM |
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Microsemi Corporation |
TRANS RF BIPO 220W 12A 55HU-2
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 31V
- Frequency - Transition: 200MHz ~ 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB ~ 9.5dB
- Power - Max: 220W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 12A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55HV
- Supplier Device Package: 55HV
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Package: 55HV |
Stock6,672 |
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31V | 200MHz ~ 500MHz | - | 9dB ~ 9.5dB | 220W | 10 @ 1A, 5V | 12A | 200°C (TJ) | Chassis Mount | 55HV | 55HV |
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Microsemi Corporation |
TRANS RF BIPO 250W 6.5A 55FW1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.6dB ~ 8.5dB
- Power - Max: 250W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 6.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55FW-1
- Supplier Device Package: 55FW-1
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Package: 55FW-1 |
Stock5,904 |
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65V | 1.025GHz ~ 1.15GHz | - | 7.6dB ~ 8.5dB | 250W | 20 @ 100mA, 5V | 6.5A | 200°C (TJ) | Chassis Mount | 55FW-1 | 55FW-1 |
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CEL |
RF TRANSISTOR NPN SOT-523
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
- Gain: 10dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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Package: SOT-523 |
Stock756,000 |
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10V | 7GHz | 1.4dB @ 1GHz | 10dB | 100mW | 80 @ 7mA, 3V | 65mA | 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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ON Semiconductor |
TRANS NPN 15MA 3.5V MCPH4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 22.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 16dB
- Power - Max: 50mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
- Current - Collector (Ic) (Max): 15mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: 4-MCPH
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Package: SC-82A, SOT-343 |
Stock3,936 |
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3.5V | 22.5GHz | 1.5dB @ 2GHz | 16dB | 50mW | 70 @ 5mA, 1V | 15mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | 4-MCPH |
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NXP |
TRANS RF NPN 12V 30MA SOT-143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10.5GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 18dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock3,456 |
|
12V | 10.5GHz | 1.1dB @ 1.8GHz | 18dB | 450mW | 60 @ 5mA, 8V | 30mA | -40°C ~ 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 12V 1MHZ SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
- Gain: -
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: SC-75, SOT-416 |
Stock5,008 |
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12V | 7GHz | 1dB @ 500MHz | - | 100mW | 120 @ 20mA, 10V | 80mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
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Infineon Technologies |
TRANS RF NPN 4.5V 80MA SOT343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 30GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
- Gain: 21.5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
Package: SC-82A, SOT-343 |
Stock90,954 |
|
5V | 30GHz | 0.9dB ~ 1.4dB @ 1.8GHz | 21.5dB | 250mW | 50 @ 20mA, 3.5V | 80mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4 |
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|
Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Gain: 12dB ~ 18dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock55,626 |
|
12V | 8GHz | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz | 12dB ~ 18dB | 250mW | 70 @ 10mA, 8V | 35mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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|
NXP |
TRANS NPN 5V 5GHZ SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
- Gain: -
- Power - Max: 32mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
- Current - Collector (Ic) (Max): 6.5mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock84,888 |
|
5V | 5GHz | 1.8dB ~ 2dB @ 1GHz | - | 32mW | 50 @ 500µA, 1V | 6.5mA | 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Renesas Electronics Corporation |
FREQUENCY AMPLIFIER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 12.5dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: - |
Request a Quote |
|
12V | 7GHz | 1.1dB @ 1GHz | 12.5dB | 150mW | 130 @ 20mA, 10V | 100mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
RF TRANS NPN 30V 400MHZ TO39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: - |
Request a Quote |
|
30V | 800MHz | - | 10dB | 5W | 25 @ 50mA, 5V | 400mA | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
2SA1483-Y(TE12L,F)
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 45V
- Frequency - Transition: 200MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
|
Package: - |
Request a Quote |
|
45V | 200MHz | - | - | - | 120 @ 10mA, 1V | 200mA | 150°C (TJ) | Surface Mount | TO-243AA | PW-MINI |
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Microsemi Corporation |
TRANS NPN 15V 200MA
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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NTE Electronics, Inc |
RF TRANS PNP 20V 700MHZ TO72
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 5dB @ 800MHz
- Gain: 14dB
- Power - Max: 60mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
- Current - Collector (Ic) (Max): 10mA
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
|
Package: - |
Request a Quote |
|
20V | 700MHz | 5dB @ 800MHz | 14dB | 60mW | 50 @ 2mA, 10V | 10mA | 90°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-72 |
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NTE Electronics, Inc |
RF TRANS NPN 30V 500MHZ TO92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): 6dB @ 45MHz
- Gain: 28dB
- Power - Max: 425mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
30V | 500MHz | 6dB @ 45MHz | 28dB | 425mW | 30 @ 5mA, 10V | 50mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |