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Infineon Technologies |
TRANSISTOR RF NPN 15V SOT-223
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
- Gain: 14dB ~ 8.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
- Current - Collector (Ic) (Max): 210mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock6,384 |
|
15V | 5.5GHz | 2dB ~ 3dB @ 900MHz ~ 1.8GHz | 14dB ~ 8.5dB | 1W | 70 @ 70mA, 8V | 210mA | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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Infineon Technologies |
TRANSISTOR RF NPN 12V SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 9.5dB ~ 14.5dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 90mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,072 |
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12V | 6GHz | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz | 9.5dB ~ 14.5dB | 300mW | 70 @ 30mA, 8V | 90mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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CEL |
RF TRANSISTOR NPN SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 14.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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Package: TO-253-4, TO-253AA |
Stock7,552 |
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6V | 14.5GHz | 1.5dB @ 2GHz | 12dB | 200mW | 75 @ 20mA, 3V | 50mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143 |
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Broadcom Limited |
TRANS NPN BIPO 20V 200MA 230-SMD
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD (230 mil BeO)
- Supplier Device Package: 230 mil Be0
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Package: 4-SMD (230 mil BeO) |
Stock7,472 |
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20V | - | - | - | 3W | 20 @ 110mA, 8V | 200mA | 200°C (TJ) | Surface Mount | 4-SMD (230 mil BeO) | 230 mil Be0 |
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CEL |
RF TRANSISTOR NPN SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
- Gain: 11dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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Package: TO-253-4, TO-253AA |
Stock2,384 |
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10V | 10GHz | 1.8dB @ 2GHz | 11dB | 200mW | 50 @ 10mA, 6V | 35mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143 |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 20MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
- Gain: -
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,328 |
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20V | 600MHz | 3dB ~ 5dB @ 100MHz | - | 250mW | 120 @ 1mA, 6V | 20mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 30V 20MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
- Gain: 20dB ~ 23dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3mA, 10V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,052,000 |
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30V | 600MHz | 0.3dB @ 200MHz | 20dB ~ 23dB | 150mW | 120 @ 3mA, 10V | 20mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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CEL |
TRANS NPN 2GHZ M05
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
- Gain: 11dB ~ 19dB
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05
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Package: SOT-343F |
Stock2,880 |
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5V | 17GHz | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz | 11dB ~ 19dB | 500mW | 130 @ 15mA, 2V | 100mA | 150°C (TJ) | Surface Mount | SOT-343F | M05 |
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Broadcom Limited |
IC TRANS NPN GP BIPOLAR SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
- Gain: 11dB ~ 15.5dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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Package: TO-253-4, TO-253AA |
Stock506,136 |
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12V | - | 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz | 11dB ~ 15.5dB | 225mW | 30 @ 5mA, 5V | 50mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143 |
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Panasonic Electronic Components |
TRANS NPN HF 20VCEO 15MA SS-MINI
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
- Gain: 24dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
- Current - Collector (Ic) (Max): 15mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
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Package: SC-89, SOT-490 |
Stock823,080 |
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20V | 650MHz | 3.3dB @ 100MHz | 24dB | 125mW | 65 @ 1mA, 6V | 15mA | 125°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F1 |
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NXP |
TRANS NPN 15V 70MA 9GHZ SOT323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock6,608 |
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15V | 9GHz | 1.1dB ~ 2.1dB @ 900MHz | - | 300mW | 60 @ 20mA, 6V | 70mA | 175°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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NXP |
TRANS RF 15V 9GHZ SOT143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
- Current - Collector (Ic) (Max): 120mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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Package: TO-253-4, TO-253AA |
Stock5,600 |
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15V | 9GHz | 1.3dB ~ 1.8dB @ 900MHz | - | 400mW | 60 @ 40mA, 8V | 120mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
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NXP |
TRANS RF NPN 8GHZ 10V SOT143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 380mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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Package: TO-253-4, TO-253AA |
Stock3,104 |
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10V | 8GHz | 1.3dB ~ 3dB @ 1GHz ~ 2GHz | - | 380mW | 60 @ 15mA, 5V | 50mA | 175°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
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Microsemi Corporation |
TRANS RF BIPO 2900W 80A 55KV1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 2900W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 80A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KV
- Supplier Device Package: 55KV
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Package: 55KV |
Stock5,152 |
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65V | 1.09GHz | - | 6dB | 2900W | 10 @ 1A, 5V | 80A | 200°C (TJ) | Chassis Mount | 55KV | 55KV |
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Microsemi Corporation |
TRANS HBT RF BIPOLAR 55BT
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.5dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 55BT
- Supplier Device Package: 55BT
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Package: 55BT |
Stock3,904 |
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50V | 2GHz | - | 9.5dB | 5W | 20 @ 100mA, 5V | 250mA | - | Chassis Mount | 55BT | 55BT |
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Microsemi Corporation |
TRANS RF NPN 12V 50MA TO72
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 200MHz
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
- Gain: 20dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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Package: TO-206AF, TO-72-4 Metal Can |
Stock17,928 |
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12V | 200MHz | 4.5dB @ 200MHz | 20dB | 300mW | 25 @ 3mA, 1V | 50mA | - | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-72 |
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ON Semiconductor |
TRANS NPN 8V 150MA MCPH4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 16GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 17.5dB
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-MCPH
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Package: 4-SMD, Flat Leads |
Stock3,344 |
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8V | 16GHz | 1.2dB @ 1GHz | 17.5dB | 400mW | 60 @ 50mA, 5V | 150mA | 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-MCPH |
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M/A-Com Technology Solutions |
TRANS RF NPN 25V 20A 211-11
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 12dB
- Power - Max: 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 211-11, Style 2
- Supplier Device Package: 211-11, Style 2
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Package: 211-11, Style 2 |
Stock7,504 |
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25V | - | - | 12dB | 80W | 40 @ 5A, 5V | 20A | - | Chassis Mount | 211-11, Style 2 | 211-11, Style 2 |
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Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 12dB ~ 18dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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Package: TO-253-4, TO-253AA |
Stock3,408 |
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12V | 8GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | 12dB ~ 18dB | 580mW | 70 @ 30mA, 8V | 80mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | PG-SOT143-4 |
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NXP |
TRANS RF NPN 12V 40MA SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
- Gain: 18.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock6,496 |
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12V | 11GHz | 0.6dB @ 900MHz | 18.5dB | 450mW | 60 @ 10mA, 8V | 40mA | -40°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 30V 550MHZ SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
- Gain: 17dB ~ 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: SC-75, SOT-416 |
Stock72,000 |
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30V | 550MHz | 2.3dB ~ 5dB @ 100MHz | 17dB ~ 23dB | 100mW | 70 @ 1mA, 6V | 20mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 30V 550MHZ USM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
- Gain: 17dB ~ 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock13,080 |
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30V | 550MHz | 2dB ~ 5dB @ 100MHz | 17dB ~ 23dB | 100mW | 100 @ 1mA, 6V | 20mA | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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NXP |
TRANS RF NPN 12V 50MA SOT-143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 0.75db @ 900MHz
- Gain: 21.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Gull Wing
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock25,962 |
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12V | 11GHz | 0.75db @ 900MHz | 21.5dB | 450mW | 60 @ 15mA, 8V | 50mA | -40°C ~ 150°C (TJ) | Surface Mount, Gull Wing | TO-253-4, TO-253AA | SOT-143B |
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ON Semiconductor |
TRANS SS VHF NPN 15V SOT23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 11dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,699,752 |
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15V | 600MHz | 6dB @ 60MHz | 11dB | 225mW | 20 @ 3mA, 1V | 50mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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onsemi |
RF TRANS NPN 8V 16GHZ 4MCPH
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 16GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 17.5dB
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-MCPH
|
Package: - |
Request a Quote |
|
8V | 16GHz | 1.2dB @ 1GHz | 17.5dB | 400mW | 60 @ 50mA, 5V | 150mA | 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-MCPH |
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MACOM Technology Solutions |
TRANS RF NPN 35V 9A 316-01
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 13dB
- Power - Max: 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
- Current - Collector (Ic) (Max): 9A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 316-01
- Supplier Device Package: 316-01, STYLE 1
|
Package: - |
Request a Quote |
|
35V | - | - | 13dB | 80W | 10 @ 4A, 5V | 9A | - | Chassis Mount | 316-01 | 316-01, STYLE 1 |
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MACOM Technology Solutions |
TRANSISTOR,110W,2.7-2.9GHZ,100US
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 63V
- Frequency - Transition: 2.7GHz ~ 2.9GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.8dB
- Power - Max: 330W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 2L-FLG
- Supplier Device Package: 2L-FLG
|
Package: - |
Request a Quote |
|
63V | 2.7GHz ~ 2.9GHz | - | 6.8dB | 330W | - | 8A | 200°C (TJ) | Chassis Mount | 2L-FLG | 2L-FLG |
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Renesas Electronics Corporation |
RF 0.05A, NPN
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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