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Fairchild/ON Semiconductor |
TRANSISTOR RF PNP SOT-23
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,328 |
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Microsemi Corporation |
RF NPN TRANSISTOR
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 470MHz
- Noise Figure (dB Typ @ f): -
- Gain: 12.5dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,280 |
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16V | 470MHz | - | 12.5dB | 3W | 50 @ 100mA, 5V | 500mA | - | - | - | - |
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CEL |
RF TRANSISTOR NPN SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
- Gain: 12dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock447,684 |
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10V | 7GHz | 1.4dB @ 1GHz | 12dB | 150mW | 40 @ 7mA, 3V | 65mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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CEL |
RF TRANSISTOR NPN SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,712 |
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10V | 9GHz | 1.2dB @ 1GHz | 13dB | 200mW | 50 @ 20mA, 8V | 65mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Fairchild/ON Semiconductor |
TRANS RF NPN 12V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): 5dB @ 200MHz
- Gain: 15dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,760 |
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12V | 2GHz | 5dB @ 200MHz | 15dB | 350mW | 25 @ 3mA, 1V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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CEL |
TRANSISTOR NPN 1GHZ SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
- Gain: 9dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,176 |
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12V | 7GHz | 1.4dB ~ 2dB @ 1GHz | 9dB | 200mW | 50 @ 20mA, 10V | 100mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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CEL |
TRANSISTOR NPN 2GHZ SOT-363
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock4,832 |
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6V | 14GHz | 1.6dB @ 2GHz | - | 150mW | 80 @ 10mA, 3V | 30mA | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 15V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,984 |
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15V | 1.1GHz | - | - | 250mW | 70 @ 5mA, 10V | 50mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANSISTOR RF NPN 40V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,864 |
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40V | 1.1GHz | - | - | 350mW | 65 @ 1mA, 10V | 50mA | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN RF SS 12V TO92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
- Gain: 14dB @ 200MHz
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,320 |
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12V | 1.5GHz | 6.5dB @ 60MHz | 14dB @ 200MHz | 350W | 20 @ 8mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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CEL |
TRANS NPN 2GHZ SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.9dB @ 1GHz ~ 4GHz
- Gain: 5.3dB ~ 12.5dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock2,928 |
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10V | 10GHz | 1.5dB ~ 2.9dB @ 1GHz ~ 4GHz | 5.3dB ~ 12.5dB | 150mW | 50 @ 10mA, 6V | 35mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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M/A-Com Technology Solutions |
TRANSISTOR 65W 36V 3.10-3.50GHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 8.23dB ~ 9.09dB
- Power - Max: 65W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 7.7A
- Operating Temperature: 200°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,100 |
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65V | - | - | 8.23dB ~ 9.09dB | 65W | - | 7.7A | 200°C (TJ) | - | - | - |
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Microsemi Corporation |
TRANS RF BIPO 270W 20A TO-220AC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 14.5dB
- Power - Max: 330W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M177
- Supplier Device Package: M177
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Package: M177 |
Stock6,848 |
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55V | 30MHz | - | 14.5dB | 330W | 15 @ 10A, 6V | 40A | 200°C (TJ) | Chassis Mount | M177 | M177 |
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Microsemi Corporation |
TRANS RF BIPO 6W 750MA 55FT2
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 24V
- Frequency - Transition: 2.7GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB ~ 9.5dB
- Power - Max: 6W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 750mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: 55FT
- Supplier Device Package: 55FT
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Package: 55FT |
Stock5,120 |
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24V | 2.7GHz | - | 9dB ~ 9.5dB | 6W | 20 @ 100mA, 5V | 750mA | 200°C (TJ) | Stud Mount | 55FT | 55FT |
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Broadcom Limited |
TRANS NPN BIPO 5.5V 16MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
- Gain: 9dB ~ 11dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
- Current - Collector (Ic) (Max): 16mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,432 |
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5.5V | - | 0.9dB ~ 1.2dB @ 900MHz | 9dB ~ 11dB | 150mW | 70 @ 1mA, 2.7V | 16mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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ON Semiconductor |
TRANS BIPO NPN 150MA 8V MCPH4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 16GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 17.5dB @ 1GHz
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: 4-MCPH
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Package: SC-82A, SOT-343 |
Stock4,832 |
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8V | 16GHz | 1.2dB @ 1GHz | 17.5dB @ 1GHz | 400mW | 60 @ 50mA, 5V | 150mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | 4-MCPH |
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Maxim Integrated |
TRANS RF NPN 900MHZ 15V 8SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1GHz
- Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
- Gain: 11.6dB
- Power - Max: 6.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock4,272 |
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15V | 1GHz | 3.3dB @ 836MHz | 11.6dB | 6.4W | 100 @ 250mA, 3V | 1.2A | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Infineon Technologies |
TRANS RF NPN 5V 80MA 4TSFP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 30GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
- Gain: 20dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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Package: 4-SMD, Flat Leads |
Stock6,608 |
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5V | 30GHz | 0.9dB ~ 1.4dB @ 1.8GHz | 20dB | 250mW | 50 @ 20mA, 3.5V | 80mA | 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-TSFP |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 7GHZ 80MA SMQ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 13dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
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Package: SC-61AA |
Stock6,112 |
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12V | 7GHz | 1.1dB @ 1GHz | 13dB | 150mW | 120 @ 20mA, 10V | 80mA | 125°C (TJ) | Surface Mount | SC-61AA | SMQ |
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Infineon Technologies |
TRANSISTOR RF NPN 12V SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 9.5dB ~ 14.5dB
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 90mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,236 |
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12V | 6GHz | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz | 9.5dB ~ 14.5dB | 300mW | 70 @ 30mA, 8V | 90mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Rohm Semiconductor |
TRANS RF NPN 25V 50MA SOT-416
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 300MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: SC-75, SOT-416 |
Stock23,952 |
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25V | 300MHz | - | - | 150mW | 82 @ 1mA, 6V | 50mA | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | EMT3 |
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onsemi |
NPN EPITAXIAL PLANAR SILICON
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
- Gain: 14dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: - |
Request a Quote |
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12V | 5GHz | 1.5dB @ 900MHz | 14dB | 250mW | 100 @ 20mA, 10V | 100mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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Renesas Electronics Corporation |
RF BIPOLAR TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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CEL |
RF TRANS PNP 12V 8.5GHZ SOT23
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
12V | 8.5GHz | 1.5dB @ 1GHz | 12dB | 200mW | 20 @ 20mA, 8V | 50mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - |
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CEL |
RF TRANS PNP 12V 5.5GHZ SOT23
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 2dB @ 1GHz
- Gain: 10dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
12V | 5.5GHz | 2dB @ 1GHz | 10dB | 200mW | 20 @ 15mA, 10V | 50mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - |
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Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
RF TRANS NPN 12V 6.7GHZ PCP
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
RF SMALL SIGNAL BIPOLAR TRANSIST
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |