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Infineon Technologies |
TRANSISTOR NPN RF 4.5V SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 24GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
- Gain: 15.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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Package: SC-82A, SOT-343 |
Stock2,384 |
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5V | 24GHz | 1.25dB @ 1.8GHz | 15.5dB | 450mW | 60 @ 50mA, 4V | 100mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4 |
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Infineon Technologies |
TRANS NPN RF 4.5V SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 21dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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Package: SC-82A, SOT-343 |
Stock3,776 |
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5V | 25GHz | 1.1dB @ 1.8GHz | 21dB | 160mW | 60 @ 20mA, 4V | 35mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4 |
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CEL |
RF TRANSISTOR NPN SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 15GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 15dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
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Package: SC-82A, SOT-343 |
Stock6,128 |
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6V | 15GHz | 1.7dB @ 2GHz | 15dB | 200mW | 75 @ 20mA, 3V | 50mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | SOT-343 |
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Microsemi Corporation |
TRANS RF BIPO 87.5W 1.5A M104
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 87.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M105
- Supplier Device Package: M105
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Package: M105 |
Stock2,768 |
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65V | 1.025GHz ~ 1.15GHz | - | 10dB | 87.5W | - | 1.5A | 200°C (TJ) | Chassis Mount | M105 | M105 |
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Microsemi Corporation |
TRANS RF BIPO 10W 600MA 55LV1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 2.2GHz ~ 2.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.5dB
- Power - Max: 10W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
- Current - Collector (Ic) (Max): 600mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55LV
- Supplier Device Package: 55LV
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Package: 55LV |
Stock3,712 |
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40V | 2.2GHz ~ 2.5GHz | - | 8.5dB | 10W | 20 @ 200mA, 5V | 600mA | 200°C (TJ) | Chassis Mount | 55LV | 55LV |
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CEL |
RF TRANSISTOR NPN SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
- Gain: 9.4dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock2,720 |
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10V | 10GHz | 1.9dB @ 2GHz | 9.4dB | 150mW | 125 @ 5mA, 3V | 35mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microsemi Corporation |
TRANS NPN 16V 500MA POWERMACRO
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 12.5dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Power Macro
- Supplier Device Package: Power Macro
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Package: Power Macro |
Stock2,192 |
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16V | - | - | 11dB ~ 12.5dB | 3W | 50 @ 100mA, 5V | 500mA | - | Surface Mount | Power Macro | Power Macro |
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Fairchild/ON Semiconductor |
TRANS RF NPN 15V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 14dB ~ 26dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,088 |
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15V | 1.5GHz | - | 14dB ~ 26dB | 350mW | 20 @ 8mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS RF NPN 20V 100MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 3dB @ 200MHz
- Gain: -
- Power - Max: 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,416 |
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20V | 700MHz | 3dB @ 200MHz | - | 625mW | 40 @ 20mA, 10V | 100mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Intersil |
TRANSISTOR ARRAY NPN 16-SOIC
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.15GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
- Gain: 27dB ~ 30dB
- Power - Max: 85mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock3,536 |
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15V | 1.15GHz | 3.5dB @ 100MHz | 27dB ~ 30dB | 85mW | 35 @ 5mA, 6V | 20mA | 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 20MA TO-92S
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
- Gain: 18dB ~ 22dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,928 |
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20V | 600MHz | 3dB ~ 5dB @ 100MHz | 18dB ~ 22dB | 250mW | 120 @ 1mA, 6V | 20mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 50MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.4GHz
- Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
- Gain: 20dB ~ 23dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock432,000 |
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20V | 1.4GHz | 3.8dB ~ 5.5dB @ 200MHz | 20dB ~ 23dB | 150mW | 120 @ 5mA, 10V | 50mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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ON Semiconductor |
TRANS NPN RF SS 15V TO92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): 6dB @ 200MHz
- Gain: 24dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock36,000 |
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15V | 800MHz | 6dB @ 200MHz | 24dB | 350mW | 25 @ 5mA, 10V | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
TRANS NPN 50MA 10V 8GHZ SOT23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,184 |
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10V | 8GHz | 1.3dB ~ 3dB @ 1GHz ~ 2GHz | - | 300mW | 60 @ 15mA, 5V | 50mA | 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Microsemi Corporation |
TRANS RF BIPO 875W 22A M138
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.3dB
- Power - Max: 875W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 22A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M138
- Supplier Device Package: M138
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Package: M138 |
Stock5,552 |
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65V | 960MHz ~ 1.215GHz | - | 6.3dB | 875W | 10 @ 1A, 5V | 22A | 200°C (TJ) | Chassis Mount | M138 | M138 |
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ON Semiconductor |
TRANS NPN BIPO HI FREQ PCP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6.7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 9dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock5,136 |
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12V | 6.7GHz | 1.1dB @ 1GHz | 9dB | 800mW | 90 @ 30mA, 5V | 100mA | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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NXP |
TRANS RF NPN 12V 40MA SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 12.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
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Package: SC-70, SOT-323 |
Stock6,752 |
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12V | 11GHz | 1.1dB @ 1.8GHz | 12.5dB | 450mW | 60 @ 10mA, 8V | 40mA | -40°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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ON Semiconductor |
TRANS SS VHF MIXER NPN 25V SOT23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,504 |
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25V | 650MHz | - | - | 225mW | 60 @ 4mA, 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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CEL |
RF TRANSISTOR NPN SOT-343F
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 20GHz
- Noise Figure (dB Typ @ f): -
- Gain: 12dB
- Power - Max: 735mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
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Package: SOT-343F |
Stock5,136 |
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5V | 20GHz | - | 12dB | 735mW | 40 @ 100mA, 3V | 500mA | 150°C (TJ) | Surface Mount | SOT-343F | SOT-343F |
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M/A-Com Technology Solutions |
TRANSISTOR BIPOLAR 175W 1090MHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 80V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 8.58dB
- Power - Max: 188W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 10.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,904 |
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80V | - | - | 8.58dB | 188W | - | 10.5A | 200°C (TJ) | Chassis Mount | - | - |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 12V 1MHZ USM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
- Gain: -
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock5,664 |
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12V | 7GHz | 1dB @ 500MHz | - | 100mW | 80 @ 20mA, 10V | 80mA | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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ON Semiconductor |
TRANS SS VHF MIXER NPN 25V SOT23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,540,220 |
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25V | 650MHz | - | - | 225mW | 60 @ 4mA, 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild Semiconductor |
TRANS NPN 15V TO-92
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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CEL |
RF TRANS NPN 6V 12GHZ SOT143
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 10dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: -
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Package: - |
Request a Quote |
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6V | 12GHz | 1.5dB @ 2GHz | 10dB | 200mW | 75 @ 30mA, 3V | 100mA | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | - |
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Fairchild Semiconductor |
RF 0.05A, VERY HIGH FREQUENCY BA
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: - |
Request a Quote |
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15V | 1.1GHz | - | - | 400mW | 28 @ 1mA, 5V | 50mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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MACOM Technology Solutions |
TRANSISTOR,220W,1.2-1.4GHZ,150US
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1.4GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.4dB
- Power - Max: 700W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 21A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 2L-FLG
- Supplier Device Package: 2L-FLG
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Package: - |
Request a Quote |
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70V | 1.4GHz | - | 7.4dB | 700W | - | 21A | 200°C (TJ) | Chassis Mount | 2L-FLG | 2L-FLG |
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MACOM Technology Solutions |
TRANSISTOR,350WPK,1.09GHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 1100W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 25A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 2L-FLG
- Supplier Device Package: 2L-FLG
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Package: - |
Request a Quote |
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65V | - | - | 9dB | 1100W | - | 25A | 200°C (TJ) | Chassis Mount | 2L-FLG | 2L-FLG |
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Microsemi Corporation |
RF TRANS 65V M216
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 910W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
- Current - Collector (Ic) (Max): 28A
- Operating Temperature: 250°C
- Mounting Type: Chassis Mount
- Package / Case: M216
- Supplier Device Package: M216
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Package: - |
Request a Quote |
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65V | - | - | 7dB | 910W | 15 @ 1A, 5V | 28A | 250°C | Chassis Mount | M216 | M216 |