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Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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Package: SC-75, SOT-416 |
Stock3,984 |
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70mA | 50V | 47k | 22k | 50 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
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NXP |
TRANS PREBIAS PNP 500MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,904 |
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100mA | 50V | 2.2k | 47k | 100 @ 10mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock6,912 |
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100mA | 50V | 47k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock3,712 |
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100mA | 50V | 1k | 10k | 33 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Diodes Incorporated |
TRANS PREBIAS NPN 200MW SOT323
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock3,440 |
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500mA | 50V | - | 10k | 56 @ 5mA, 5V | 300mV @ 2.5mA, 50mA | 500nA (ICBO) | 200MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
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ON Semiconductor |
TRANS PNP 50V BIPOLAR SOT-723
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 260mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
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Package: SOT-723 |
Stock6,992 |
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100mA | 50V | 10k | 10k | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 260mW | Surface Mount | SOT-723 | SOT-723 |
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ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock1,680,516 |
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100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: SOT-723 |
Stock3,600 |
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70mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | Surface Mount | SOT-723 | VMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: SOT-723 |
Stock3,632 |
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100mA | 50V | 4.7k | 4.7k | 20 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | Surface Mount | SOT-723 | VMT3 |
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ON Semiconductor |
TRANS PREBIAS NPN 246MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock72,000 |
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100mA | 50V | 2.2k | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Diodes Incorporated |
TRANS PREBIAS NPN 250MW 3DFN
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: 3-DFN1006 (1.0x0.6)
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Package: 3-XFDFN |
Stock7,200 |
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100mA | 50V | 2.2k | 47k | 180 @ 50mA, 5V | 200mV @ 5mA, 50mA | 500nA | 250MHz | 250mW | Surface Mount | 3-XFDFN | 3-DFN1006 (1.0x0.6) |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
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Package: NS-B1 |
Stock3,136 |
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100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
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Package: SOT-723 |
Stock996,000 |
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100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 100mW | Surface Mount | SOT-723 | SSSMini3-F2-B |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock28,092 |
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100mA | 50V | 22k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
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Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,728 |
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100mA | 50V | 47k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 200MW UMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock72,000 |
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100mA | 50V | 1k | 10k | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | UMT3 |
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Rohm Semiconductor |
TRANS PREBIAS NPN 200MW UMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock36,000 |
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100mA | 50V | 47k | - | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | UMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 200MW UMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock319,668 |
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500mA | 50V | 2.2k | 10k | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | SC-70, SOT-323 | UMT3 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SC70
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Package: - |
Stock9,000 |
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100 mA | 50 V | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250 MHz | 100 mW | Surface Mount | SC-70, SOT-323 | SC-70 |
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onsemi |
TRANS BRT NPN 100MA 50V SOT-323
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock22,650 |
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100 mA | 50 V | 10 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | - | 150 mW | Surface Mount | SOT-723 | VESM |
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Rohm Semiconductor |
TRANS PREBIAS PNP 0.1A UMT3F
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
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Package: - |
Stock8,940 |
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100 mA | - | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | - | 250 MHz | 200 mW | Surface Mount | SC-85 | UMT3F |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.1A UMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: - |
Stock7,095 |
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100 mA | 50 V | 22 kOhms | 22 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 200 mW | Surface Mount | SC-70, SOT-323 | UMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.1A EMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: - |
Stock9,000 |
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100 mA | 50 V | 4.7 kOhms | - | 100 @ 1mA, 5V | 300mV @ 250µA, 5mA | 500nA (ICBO) | 250 MHz | 150 mW | Surface Mount | SC-75, SOT-416 | EMT3 |
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onsemi |
SMALL SIGNAL BIPOLAR TRANSTR NPN
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Through Hole
- Package / Case: 3-SSIP
- Supplier Device Package: 3-SPA
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Package: - |
Request a Quote |
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- | 50 V | - | - | - | - | - | - | 200 mW | Through Hole | 3-SSIP | 3-SPA |
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Rohm Semiconductor |
TRANS PREBIAS NPN 50V 0.1A VMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: - |
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100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 150 mW | Surface Mount | SOT-723 | VMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 0.1A EMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: - |
Stock8,865 |
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100 mA | - | 2.2 kOhms | 2.2 kOhms | 20 @ 20mA, 5V | 300mV @ 500µA, 10mA | - | 250 MHz | 150 mW | Surface Mount | SC-75, SOT-416 | EMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.1A UMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 100 kOhms
- Resistor - Emitter Base (R2) (Ohms): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: - |
Stock8,226 |
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100 mA | 50 V | 100 kOhms | 100 kOhms | 82 @ 5mA, 5V | 300mV @ 250µA, 5mA | - | 250 MHz | 200 mW | Surface Mount | SC-70, SOT-323 | UMT3 |