Page 126 - Transistors - Bipolar (BJT) - Single, Pre-Biased | Discrete Semiconductor Products

RN2104CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

Package: SC-101, SOT-883

Stock7,776
PDTC114YS,126
NXP

TRANS PREBIAS NPN 500MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7,552
PDTA143ZK,115
NXP

TRANS PREBIAS PNP 250MW SMT3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,840
DTC124EKA-TP
Micro Commercial Co

TRANS PREBIAS NPN 200MW SOT23-3L

Package: TO-236-3, SC-59, SOT-23-3

Stock6,656
DTA114YEBTL
Rohm Semiconductor

TRANS PREBIAS PNP 0.15W EMT3

Package: SC-89, SOT-490

Stock5,904
DTA024EUBTL
Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

Package: SC-85

Stock3,536
RN1301,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Package: SC-70, SOT-323

Stock367,836
UNR222600L
Panasonic Electronic Components

TRANS PREBIAS NPN 200MW MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock72,000
DRC5114Y0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

Package: SC-85

Stock1,490,004
DRA5L14Y0L
Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Package: SC-85

Stock2,272
DDTC115TCA-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock6,336
DTA123JEBTL
Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3F

Package: SC-89, SOT-490

Stock61,416
DTDG14GPT100
Rohm Semiconductor

TRANS PREBIAS NPN 2W MPT3

Package: TO-243AA

Stock94,632
DDTC144TCA-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock35,400
NTE2370
NTE Electronics, Inc

TRANS PREBIAS PNP 50V TO92S

Package: -

Request a Quote
DTA144VCAT116
Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Package: -

Stock2,850
DTC114EE3HZGTL
Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Package: -

Stock7,293
DTA114T
onsemi

TRANS PREBIAS PNP 50V 100MA

Package: -

Request a Quote
RN1108-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Package: -

Stock18,000
RN1415-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN2104CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.05W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	Package: SC-101, SOT-883	Stock7,776	50mA	20V	47k	47k	120 @ 10mA, 5V	150mV @ 250µA, 5mA	500nA	-	50mW	Surface Mount	SC-101, SOT-883	CST3
PDTC114YS,126	NXP	TRANS PREBIAS NPN 500MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7,552	100mA	50V	10k	47k	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PDTA143ZK,115	NXP	TRANS PREBIAS PNP 250MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	Package: TO-236-3, SC-59, SOT-23-3	Stock3,840	100mA	50V	4.7k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
DTC124EKA-TP	Micro Commercial Co	TRANS PREBIAS NPN 200MW SOT23-3L Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3L	Package: TO-236-3, SC-59, SOT-23-3	Stock6,656	100mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3L
DTA114YEBTL	Rohm Semiconductor	TRANS PREBIAS PNP 0.15W EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	Package: SC-89, SOT-490	Stock5,904	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTA024EUBTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.2W UMT3F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	Package: SC-85	Stock3,536	30mA	50V	22k	22k	60 @ 5mA, 10V	150mV @ 500µA, 5mA	-	250MHz	200mW	Surface Mount	SC-85	UMT3F
RN1301,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Package: SC-70, SOT-323	Stock367,836	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SC-70, SOT-323	USM
UNR222600L	Panasonic Electronic Components	TRANS PREBIAS NPN 200MW MINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 1µA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	Package: TO-236-3, SC-59, SOT-23-3	Stock72,000	600mA	20V	4.7k	-	100 @ 100mA, 10V	80mV @ 2.5mA, 50mA	1µA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
DRC5114Y0L	Panasonic Electronic Components	TRANS PREBIAS NPN 150MW SMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	Package: SC-85	Stock1,490,004	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DRA5L14Y0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 330µA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	Package: SC-85	Stock2,272	100mA	30V	10k	47k	80 @ 5mA, 10V	1.2V @ 330µA, 50mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DDTC115TCA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,336	100mA	50V	100k	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DTA123JEBTL	Rohm Semiconductor	TRANS PREBIAS PNP 150MW EMT3F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	Package: SC-89, SOT-490	Stock61,416	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTDG14GPT100	Rohm Semiconductor	TRANS PREBIAS NPN 2W MPT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 80MHz Power - Max: 2W Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	Package: TO-243AA	Stock94,632	1A	60V	-	10k	300 @ 500mA, 2V	400mV @ 5mA, 500mA	500nA (ICBO)	80MHz	2W	Surface Mount	TO-243AA	MPT3
DDTC144TCA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock35,400	100mA	50V	47k	-	100 @ 1mA, 5V	300mV @ 250µA, 2.5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NTE2370	NTE Electronics, Inc	TRANS PREBIAS PNP 50V TO92S Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	Package: -	Request a Quote	100 mA	50 V	4.7 kOhms	4.7 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
DTA144VCAT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	Package: -	Stock2,850	100 mA	50 V	47 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC114EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: -	Stock7,293	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTA114T	onsemi	TRANS PREBIAS PNP 50V 100MA Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
RN1108-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock18,000	100 mA	50 V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
RN1415-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	2.2 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
DTC124EU3T106	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	Package: -	Request a Quote	100 mA	-	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTC144ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	Package: -	Stock10,593	100 mA	-	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DDTC144EUAQ-13-F	Diodes Incorporated	TRANS PREBIAS NPN 50V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: -	Stock30,000	100 mA	50 V	47 kOhms	47 kOhms	80 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTA143ZQB-QZ	Nexperia USA Inc.	TRANS PREBIAS PNP 50V 0.1A 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180 MHz Power - Max: 340 mW Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	Package: -	Stock15,000	100 mA	50 V	4.7 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	180 MHz	340 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
DTC143TE3HZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: -	Stock9,000	100 mA	50 V	4.7 kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
2SC4361-AC	onsemi	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: 200 mW Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: 3-SPA	Package: -	Request a Quote	-	50 V	-	-	-	-	-	-	200 mW	Through Hole	3-SSIP	3-SPA
ADTA143ZUAQ-7	Diodes Incorporated	TRANS PREBIAS PNP 0.1A SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 330 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: -	Stock9,000	100 mA	-	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	330 mW	Surface Mount	SC-70, SOT-323	SOT-323
RN2403-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	22 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini