Page 42 - Transistors - Bipolar (BJT) - Single, Pre-Biased | Discrete Semiconductor Products

BCR198WE6327BTSA1
Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Package: SC-70, SOT-323

Stock2,480
RN1110CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Package: SC-101, SOT-883

Stock3,488
DDTA115GKA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,544
PDTC144ES,126
NXP

TRANS PREBIAS NPN 500MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,496
FJN3309RTA
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,160
UNR422100A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Package: NS-B1

Stock3,376
DTC144TT1G
ON Semiconductor

TRANS PREBIAS NPN 230MW SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock6,192
UNR211F00L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock468,000
BCR555E6433HTMA1
Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,056
DTC143TEBTL
Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

Package: SC-75, SOT-416

Stock6,960
DDTC144ECA-7-F
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock67,200
DTC124TETL
Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

Package: SC-75, SOT-416

Stock7,824
DDTC115TE-7-F
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Package: SOT-523

Stock3,472
RN1312(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W USM

Package: SC-70, SOT-323

Stock23,196
FJV3115RMTF
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock164,316
RN1103MFV,L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

Package: SOT-723

Stock87,444
UNR411300A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

Package: NS-B1

Stock45,036
DDTC144WE-7
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Package: SOT-523

Stock29,766
UNR5215G0L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

Package: SC-85

Stock26,952
DDTC123TUA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Package: SC-70, SOT-323

Stock29,064

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR198WE6327BTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	Package: SC-70, SOT-323	Stock2,480	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
RN1110CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	Package: SC-101, SOT-883	Stock3,488	50mA	20V	4.7k	-	300 @ 1mA, 5V	150mV @ 250µA, 5mA	100nA (ICBO)	-	50mW	Surface Mount	SC-101, SOT-883	CST3
DDTA115GKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,544	100mA	50V	-	100k	82 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
PDTC144ES,126	NXP	TRANS PREBIAS NPN 500MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,496	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN3309RTA	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 300MW TO92-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,160	100mA	40V	4.7k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	250MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
UNR422100A	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	Package: NS-B1	Stock3,376	500mA	50V	2.2k	2.2k	40 @ 100mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	300mW	Through Hole	NS-B1	NS-B1
DTC144TT1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Package: TO-236-3, SC-59, SOT-23-3	Stock6,192	100mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
UNR211F00L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	Package: TO-236-3, SC-59, SOT-23-3	Stock468,000	100mA	50V	4.7k	10k	30 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
BCR555E6433HTMA1	Infineon Technologies	TRANS PREBIAS PNP 300MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,056	500mA	50V	2.2k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
DTC143TEBTL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: SC-75, SOT-416	Stock6,960	100mA	50V	4.7k	-	100 @ 1mA, 5V	150mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3
DDTC144ECA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock67,200	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DTC124TETL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: SC-75, SOT-416	Stock7,824	100mA	50V	22k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3
DDTC115TE-7-F	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Package: SOT-523	Stock3,472	100mA	50V	100k	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-523	SOT-523
RN1312(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Package: SC-70, SOT-323	Stock23,196	100mA	50V	22k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	150mW	Surface Mount	SC-70, SOT-323	USM
FJV3115RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock164,316	100mA	50V	2.2k	10k	33 @ 10mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
RN1103MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 150MW VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: SOT-723	Stock87,444	100mA	50V	22k	22k	70 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
UNR411300A	Panasonic Electronic Components	TRANS PREBIAS PNP 300MW NS-B1 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	Package: NS-B1	Stock45,036	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	300mW	Through Hole	NS-B1	NS-B1
DDTC144WE-7	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Package: SOT-523	Stock29,766	100mA	50V	47k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-523	SOT-523
UNR5215G0L	Panasonic Electronic Components	TRANS PREBIAS NPN 150MW SMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	Package: SC-85	Stock26,952	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	SC-85	SMini3-F2
DDTC123TUA-7	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: SC-70, SOT-323	Stock29,064	100mA	50V	2.2k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DTC143EET1G	ON Semiconductor	TRANS PREBIAS NPN 0.2W SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	Package: SC-75, SOT-416	Stock209,766	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
DTA123JKAT146	Rohm Semiconductor	TRANS PREBIAS PNP 200MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	Package: TO-236-3, SC-59, SOT-23-3	Stock142,800	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DDTC142TE-7-F	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Package: SOT-523	Stock26,202	100mA	50V	470	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	200MHz	150mW	Surface Mount	SOT-523	SOT-523
RN2102-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock11,820	100 mA	50 V	10 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
NHDTA114EUF	Nexperia USA Inc.	TRANS PREBIAS PNP 80V SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150 MHz Power - Max: 235 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: -	Stock8,625	100 mA	80 V	10 kOhms	10 kOhms	50 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	150 MHz	235 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA114GU3HZGT106	Rohm Semiconductor	PNP, SOT-323, R2 ALONE TYPE Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	Package: -	Request a Quote	100 mA	50 V	10 kOhms	-	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
RN1301-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	Package: -	Stock34,845	100 mA	50 V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
DDTA144ECAQ-13-F	Diodes Incorporated	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: -	Stock29,280	100 mA	50 V	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3