|
|
Infineon Technologies |
TRANS PREBIAS PNP 250MW TSLP-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
|
Package: SC-101, SOT-883 |
Stock3,408 |
|
100mA | 50V | 10k | - | 120 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 250mW | Surface Mount | SC-101, SOT-883 | PG-TSLP-3 |
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|
Infineon Technologies |
TRANS PREBIAS PNP 250MW SOT323-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
Package: SC-70, SOT-323 |
Stock5,504 |
|
100mA | 50V | 2.2k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 250mW | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 |
|
|
Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
|
Package: SC-75, SOT-416 |
Stock4,912 |
|
70mA | 50V | 47k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 100MHz | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
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|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.05W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Package: SC-101, SOT-883 |
Stock4,448 |
|
50mA | 20V | 4.7k | - | 300 @ 1mA, 5V | 150mV @ 250µA, 5mA | 100nA (ICBO) | - | 50mW | Surface Mount | SC-101, SOT-883 | CST3 |
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Diodes Incorporated |
TRANS PREBIAS NPN 200MW SC59-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,192 |
|
100mA | 50V | 4.7k | 4.7k | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 |
|
|
ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
|
Package: SC-70, SOT-323 |
Stock1,459,848 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 200MW SOT523F
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SOT-523F
|
Package: SC-89, SOT-490 |
Stock3,152 |
|
100mA | 50V | 22k | 22k | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 200mW | Surface Mount | SC-89, SOT-490 | SOT-523F |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock5,312 |
|
100mA | 50V | 2.2k | 10k | 33 @ 10mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 470
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,480 |
|
800mA | 50V | 470 | 10k | 90 @ 100mA, 1V | 250mV @ 1mA, 50mA | 500nA | 300MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
ON Semiconductor |
TRANS PREBIAS DUAL PNP
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
|
Package: SOT-1123 |
Stock6,784 |
|
100mA | 50V | 1k | 1k | 3 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 254mW | Surface Mount | SOT-1123 | SOT-1123 |
|
|
Diodes Incorporated |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,928 |
|
500mA | 50V | 4.7k | - | 100 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA (ICBO) | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS PNP 0.425W
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock3,344 |
|
500mA | 50V | 2.2k | 2.2k | 40 @ 50mA, 5V | 100mV @ 2.5mA, 50mA | 500nA | 140MHz | 300mW | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS PNP 250MW TO236AB
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,048 |
|
100mA | 50V | 100k | - | 100 @ 1mA, 5V | 150mV @ 250µA, 5mA | 1µA | - | 250mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
Nexperia USA Inc. |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock6,016 |
|
100mA | 50V | 2.2k | - | 30 @ 20mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
|
|
ON Semiconductor |
TRANS PREBIAS PNP 260MW SOT723
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 260mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
|
Package: SOT-723 |
Stock4,432 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 260mW | Surface Mount | SOT-723 | SOT-723 |
|
|
Nexperia USA Inc. |
PDTC115EU/SOT323/SC-70
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,848 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
TRANS PREBIAS PNP 246MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,048 |
|
100mA | 50V | 47k | 22k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,920 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 300mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 125MW SSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
|
Package: SC-89, SOT-490 |
Stock57,750 |
|
100mA | 50V | 100k | 100k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 125mW | Surface Mount | SC-89, SOT-490 | SSMini3-F1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 200MW MINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock26,646 |
|
500mA | 50V | 4.7k | 4.7k | 50 @ 100mA, 10V | 250mV @ 5mA, 100mA | 1µA | - | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G3-B |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 50V VMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
|
Package: SOT-723 |
Stock87,618 |
|
100mA | 50V | 4.7k | 4.7k | 20 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | Surface Mount | SOT-723 | VMT3 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 12V 0.5A EMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 260 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
|
Package: - |
Stock8,400 |
|
500 mA | 12 V | 2.2 kOhms | 10 kOhms | 140 @ 100mA, 2V | 300mV @ 5mA, 100mA | 500nA | 260 MHz | 150 mW | Surface Mount | SC-75, SOT-416 | EMT3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: - |
Stock18,000 |
|
100 mA | 50 V | 4.7 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
onsemi |
SS SOT23 BR XSTR NPN 50V
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Stock9,000 |
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100 mA | 50 V | 2.2 kOhms | 2.2 kOhms | 8 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 246 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Nexperia USA Inc. |
TRANS PREBIAS NPN 50V TO236AB
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Stock90,000 |
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100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 230 MHz | 250 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock4,245 |
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100 mA | 50 V | 10 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150 mW | Surface Mount | SOT-723 | VESM |
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Rohm Semiconductor |
TRANS PREBIAS NPN 50V 0.1A UMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: - |
Stock8,817 |
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100 mA | 50 V | 4.7 kOhms | - | 100 @ 1mA, 5V | 300mV @ 250µA, 5mA | 500nA (ICBO) | 250 MHz | 200 mW | Surface Mount | SC-70, SOT-323 | UMT3 |
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Nexperia USA Inc. |
TRANS PREBIAS PNP 50V SOT23
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock8,700 |
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100 mA | 50 V | 22 kOhms | 22 kOhms | 60 @ 5mA, 5V | 150mV @ 10mA | 100nA | 180 MHz | 250 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |