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Central Semiconductor Corp |
TRANSISTOR PNP TO-106
- Transistor Type: PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
- Power - Max: -
- Frequency - Transition: 400MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-106-3 Domed
- Supplier Device Package: TO-106
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Package: TO-106-3 Domed |
Stock3,856 |
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- | 30V | 300mV @ 5mA, 50mA | - | 70 @ 10mA, 1V | - | 400MHz | - | Through Hole | TO-106-3 Domed | TO-106 |
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Central Semiconductor Corp |
TRANS PNP BIPOLAR TO220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 150mA, 7.5A
- Current - Collector Cutoff (Max): 200µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 7.5A, 3V
- Power - Max: 70W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock6,560 |
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10A | 100V | 2.5V @ 150mA, 7.5A | 200µA (ICBO) | 100 @ 7.5A, 3V | 70W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Microsemi Corporation |
TRANS NPN 40V 1.5A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-46-3
- Supplier Device Package: TO-46 (TO-206AB)
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Package: TO-46-3 |
Stock3,232 |
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1.5A | 40V | 900mV @ 100mA, 1A | 10µA (ICBO) | 20 @ 1A, 1.5V | 500mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-46-3 | TO-46 (TO-206AB) |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 1A SOT-523F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 350mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,864 |
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1A | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 350mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,120 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 180 @ 2mA, 5V | 500mW | 250MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 100V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock5,152 |
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500mA | 100V | 700mV @ 100mA, 1A | 100nA (ICBO) | 40 @ 100mA, 1V | 1W | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92 |
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ON Semiconductor |
TRANS NPN DARL 45V 4A TO225
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock4,720 |
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4A | 45V | 2.5V @ 30mA, 1.5A | 500µA | 750 @ 1.5A, 3V | 40W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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Fairchild/ON Semiconductor |
TRANS PNP 20V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,072 |
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500mA | 20V | 400mV @ 50mA, 500mA | 200nA (ICBO) | 70 @ 100mA, 1V | 500mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,576 |
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500mA | 25V | 300mV @ 3mA, 50mA | 100nA (ICBO) | 180 @ 2mA, 4.5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,576 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 45V BIPOLAR SC59-3
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,136 |
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- | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
TRANS NPN 50V 0.1A SOT-723
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 260mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
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Package: SOT-723 |
Stock408,168 |
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100mA | 50V | 400mV @ 5mA, 60mA | 500nA (ICBO) | 120 @ 1mA, 6V | 260mW | 180MHz | 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 2A SSOT-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-SSOT
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock62,004 |
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2A | 60V | 300mV @ 200mA, 2A | 100nA (ICBO) | 250 @ 500mA, 2V | 500mW | 75MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-SSOT |
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STMicroelectronics |
TRANS NPN DARL 400V 15A TO-247-3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Power - Max: 135W
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock26,400 |
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15A | 400V | 1.8V @ 250mA, 10A | 100µA | 300 @ 5A, 10V | 135W | - | 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 22V 4A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 22V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
- Power - Max: 36W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock42,300 |
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4A | 22V | 500mV @ 200mA, 2A | 100µA | 40 @ 10mA, 5V | 36W | 3MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Panasonic Electronic Components |
TRANS NPN 80V 0.5A MINIP3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MiniP3-F2-B
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Package: TO-243AA |
Stock20,400 |
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500mA | 80V | 400mV @ 30mA, 300mA | 100nA (ICBO) | 130 @ 150mA, 10V | 1W | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | MiniP3-F2-B |
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Diodes Incorporated |
TRANS NPN 180V 0.5A TO252
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
- Power - Max: 3.9W
- Frequency - Transition: 70MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock21,204 |
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500mA | 180V | 250mV @ 5mA, 200mA | 100nA (ICBO) | 150 @ 200mA, 5V | 3.9W | 70MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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800 mA | 50 V | 1.6V @ 50mA, 500mA | 10nA | 40 @ 150mA, 10V | 800 mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
TRANS NPN TO66
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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Package: - |
Request a Quote |
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2 A | 20 V | 450mV @ 150mA, 1.5A | 500nA (ICBO) | 180 @ 500mA, 2V | 2 W | - | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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Central Semiconductor Corp |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | 50nA (ICBO) | 100 @ 100mA, 5V | 2 W | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Micro Commercial Co |
TRANS NPN 20V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 750 mW
- Frequency - Transition: 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
1 A | 20 V | 500mV @ 80mA, 800mA | 1µA (ICBO) | 120 @ 500mA, 2V | 750 mW | 190MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Micro Commercial Co |
Interface
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
|
1.5 A | 25 V | 500mV @ 80mA, 800mA | 100nA | 85 @ 100mA, 1V | 500 mW | 100MHz | - | Surface Mount | TO-243AA | SOT-89 |
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onsemi |
TRANS NPN 20V 0.2A TO52-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 300nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
- Power - Max: 300 mW
- Frequency - Transition: 350MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-52-3
|
Package: - |
Request a Quote |
|
200 mA | 20 V | 350mV @ 10mA, 100mA | 300nA | 30 @ 30mA, 400mV | 300 mW | 350MHz | - | Through Hole | TO-206AC, TO-52-3 Metal Can | TO-52-3 |
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Panjit International Inc. |
TRANS PNP 60V 0.6A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 225 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock77,796 |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 225 mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1.16 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
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Package: - |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1.16 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U3 |
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Micro Commercial Co |
TRANS PNP 50V 2A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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Package: - |
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2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |