|
|
Infineon Technologies |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
Package: TO-261-4, TO-261AA |
Stock3,152 |
|
1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 2W | 125MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock2,672 |
|
1A | 230V | 1.5V @ 50mA, 500mA | 1µA (ICBO) | 100 @ 100mA, 5V | 2W | 70MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Central Semiconductor Corp |
TRANS PNP DARL 30A 120V DIE
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock3,040 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
TRANS PNP 50V 3A NMP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: 3-NMP
|
Package: SC-71 |
Stock6,000 |
|
3A | 50V | 700mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 100mA, 2V | 1W | 150MHz | 150°C (TJ) | Through Hole | SC-71 | 3-NMP |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 300V 0.1A TO-92L
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 Long Body |
Stock2,112 |
|
100mA | 300V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 120 @ 20mA, 10V | 1W | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP DARL 30V 0.5A TO-92
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,848 |
|
500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 625mW | 125MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 80V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,792 |
|
500mA | 80V | 400mV @ 5mA, 100mA | 100nA | 100 @ 1mA, 5V | 625mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 50V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,792 |
|
100mA | 50V | 300mV @ 1mA, 10mA | 50nA | 150 @ 100µA, 5V | 625mW | 40MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
ON Semiconductor |
TRANS NPN 20V 5A 3-WDFN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 875mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-WDFN Exposed Pad
- Supplier Device Package: 3-WDFN (2x2)
|
Package: 3-WDFN Exposed Pad |
Stock5,056 |
|
5A | 20V | 125mV @ 400mA, 4A | 100nA (ICBO) | 200 @ 2A, 2V | 875mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-WDFN Exposed Pad | 3-WDFN (2x2) |
|
|
Diodes Incorporated |
TRANS NPN 60V 0.5A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock532,068 |
|
500mA | 60V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 200mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Diodes Incorporated |
TRANS PNP 30V 1A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock917,400 |
|
1A | 30V | 380mV @ 25mA, 500mA | 100nA (ICBO) | 270 @ 100mA, 2V | 300mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Diodes Incorporated |
TRANS PNP 45V 0.1A SC70-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock312,000 |
|
100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 200mW | 200MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN DARL 30V 1.2A SOT-23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,596,944 |
|
1.2A | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 350mW | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
onsemi |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 300 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
onsemi |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SSIP
- Supplier Device Package: 3-SPA
|
Package: - |
Request a Quote |
|
500 mA | 50 V | 400mV @ 10mA, 100mA | 100nA (ICBO) | 140 @ 10mA, 5V | 300 mW | 200MHz | 150°C (TJ) | Through Hole | 3-SSIP | 3-SPA |
|
|
Diodes Incorporated |
TRANS PNP 500V 0.15A SOT223-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
- Power - Max: 3 W
- Frequency - Transition: 60MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
|
Package: - |
Stock14,493 |
|
150 mA | 500 V | 500mV @ 10mA, 50mA | 100nA | 100 @ 1mA, 10V | 3 W | 60MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
|
|
Microchip Technology |
RH POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
1 A | 350 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
|
|
NTE Electronics, Inc |
TRANS PNP 140V 12A TO3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 1.1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
- Power - Max: 100 W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
|
Package: - |
Request a Quote |
|
12 A | 140 V | 1.1V @ 500mA, 5A | 100µA | 60 @ 1A, 5V | 100 W | 15MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
|
|
Microchip Technology |
TRANS NPN 150V 0.3A U4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
300 mA | 150 V | 400mV @ 15mA, 150mA | 50nA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
|
|
Sanyo |
N CHANNEL JUNCTION SILICON TRANS
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microchip Technology |
TRANS NPN 45V TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
- | 45 V | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
|
|
Microchip Technology |
TRANS NPN 60V 3A TO5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 5µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
|
Package: - |
Request a Quote |
|
3 A | 60 V | 500mV @ 200mA, 2A | 5µA | 20 @ 1A, 2V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
|
|
Central Semiconductor Corp |
CENTRAL
- Transistor Type: PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: -
- Frequency - Transition: 150MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: - |
Request a Quote |
|
- | 80 V | - | 500nA | 100 @ 100mA, 5V | - | 150MHz | - | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
|
|
Nexperia USA Inc. |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2.2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Stock3,000 |
|
1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 2.2 W | 100MHz | 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Micro Commercial Co |
TRANS PNP 120V 0.8A SOT89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
|
800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 500 mW | 120MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
|
|
Taiwan Semiconductor Corporation |
SOT-323, 80V, 0.1A, NPN BIPOLAR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 200 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Rohm Semiconductor |
TRANS PNP 80V 1.5A MPT3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 500 mW
- Frequency - Transition: 340MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
|
Package: - |
Stock5,205 |
|
1.5 A | 80 V | 400mV @ 25mA, 500mA | 1µA (ICBO) | 120 @ 100mA, 3V | 500 mW | 340MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |