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ON Semiconductor |
TRANS PNP 300V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock82,632 |
|
500mA | 300V | 500mV @ 2mA, 20mA | 250nA (ICBO) | 25 @ 30mA, 10V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS NPN 600V 12A ISOWATT218FX
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.75A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 7A, 5V
- Power - Max: 55W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOWATT-218-3
- Supplier Device Package: ISOWATT-218
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Package: ISOWATT-218-3 |
Stock64,080 |
|
12A | 600V | 3V @ 1.75A, 7A | 1mA | 5.5 @ 7A, 5V | 55W | - | 150°C (TJ) | Through Hole | ISOWATT-218-3 | ISOWATT-218 |
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Panasonic Electronic Components |
TRANS NPN 80V 5A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 2A, 2V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-A1
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Package: TO-220-3 Full Pack |
Stock3,680 |
|
5A | 80V | 500mV @ 200mA, 4A | 10µA (ICBO) | 130 @ 2A, 2V | 2W | 30MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-A1 |
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Rohm Semiconductor |
TRANS NPN 160V 1.5A ATV
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock5,488 |
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1.5A | 160V | 2V @ 100mA, 1A | 1µA (ICBO) | 120 @ 100mA, 5V | 1W | 80MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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ON Semiconductor |
TRANS NPN 40V 5A 3WDFN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 875mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-WDFN Exposed Pad
- Supplier Device Package: 3-WDFN (2x2)
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Package: 3-WDFN Exposed Pad |
Stock6,416 |
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5A | 40V | 150mV @ 400mA, 4A | 100nA (ICBO) | 200 @ 2A, 2V | 875mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-WDFN Exposed Pad | 3-WDFN (2x2) |
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ON Semiconductor |
TRANS NPN 60V 2A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
- Power - Max: 460mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock180,000 |
|
2A | 60V | 140mV @ 200mA, 2A | 100nA (ICBO) | 150 @ 1A, 2V | 460mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Rohm Semiconductor |
TRANS PNP 30V 1.5A TSMT6
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock35,604 |
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1.5A | 30V | 370mV @ 50mA, 1A | 100nA (ICBO) | 270 @ 100mA, 2V | 500mW | 280MHz | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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ON Semiconductor |
TRANS PNP 45V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,152 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Nexperia USA Inc. |
TRANS NPN 15V 0.2A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 400nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,592 |
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200mA | 15V | 250mV @ 1mA, 10mA | 400nA (ICBO) | 40 @ 10mA, 1V | 250mW | 500MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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TSC America Inc. |
TRANSISTOR, NPN, 25V, 0.8A, 250A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,712 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 250 @ 100mA, 5V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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TSC America Inc. |
TRANSISTOR, NPN, 65V, 0.1A, 420A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,200 |
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100mA | 65V | - | 15nA (ICBO) | 420 @ 2mA, 5V | 500mW | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Nexperia USA Inc. |
TRANS NPN 40V 5A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
- Power - Max: 2W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock3,856 |
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5A | 40V | 355mV @ 500mA, 5A | 100nA (ICBO) | 250 @ 2A, 2V | 2W | 130MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 8A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 60W
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock16,032 |
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8A | 60V | 1V @ 400mA, 8A | 10µA (ICBO) | 40 @ 4A, 1V | 60W | 40MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
TRANS NPN 15V 0.5A DFN1006-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UFDFN
- Supplier Device Package: 3-DFN1006 (1.0x0.6)
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Package: 3-UFDFN |
Stock5,600 |
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500mA | 15V | 250mV @ 50mA, 500mA | 100nA (ICBO) | 150 @ 100mA, 2V | 250mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |
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Micro Commercial Co |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock35,412 |
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800mA | 45V | 700mV @ 50mA, 500mA | 200nA | 250 @ 100mA, 1V | 625mW | 260MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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ON Semiconductor |
TRANS PNP 80V 8A DPAK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 1.75W
- Frequency - Transition: 90MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock415,416 |
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8A | 80V | 1V @ 400mA, 8A | 1µA | 40 @ 4A, 1V | 1.75W | 90MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 |
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Diodes Incorporated |
TRANS PNP 100V 1A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 150mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,512 |
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1A | 100V | 330mV @ 150mA, 1A | 100nA | 250 @ 500mA, 10V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Nexperia USA Inc. |
BC846BW - TRANS NPN - DG/B4 DENO
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
100 mA | 65 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200 mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1.16 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
|
Package: - |
Request a Quote |
|
2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | 1.16 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U3 |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR POWERDI33
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.07 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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Package: - |
Stock5,940 |
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4 A | 140 V | 360mV @ 300mA, 3A | 20nA | 100 @ 1A, 5V | 1.07 W | 120MHz | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PowerDI3333-8 (SWP) Type UX |
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Diodes Incorporated |
TRANS NPN 30V 0.1A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 310 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Stock28,989 |
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100 mA | 30 V | 600mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 310 mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Sanyo |
IC REG LIN NPN TRP DIFFUSD TRANS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
|
Package: - |
Request a Quote |
|
1 A | 400 V | 800mV @ 100mA, 500mA | 10µA (ICBO) | 50 @ 100mA, 5V | 900 mW | 20MHz | 150°C (TJ) | Surface Mount | SC-96 | 3-CPH |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
- Power - Max: 200 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
500 mA | 32 V | 400mV @ 10mA, 100mA | 1µA (ICBO) | 82 @ 10mA, 3V | 200 mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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|
Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
25 A | 100 V | - | - | - | - | - | 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
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|
Microchip Technology |
TRANS PNP 300V 0.2A U4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
200 mA | 300 V | 1.2V @ 3mA, 30mA | - | 50 @ 30mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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|
onsemi |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 80 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PB
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Package: - |
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15 A | 60 V | 400mV @ 375mA, 7.5A | 100µA (ICBO) | 100 @ 1A, 2V | 80 W | 100MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PB |
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Microchip Technology |
TRANSISTOR POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Taiwan Semiconductor Corporation |
SOT-323, 50V, 0.1A, NPN BIPOLAR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
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100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |