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NXP |
TRANS NPN 40V 0.5A SC75
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
- Power - Max: 250mW
- Frequency - Transition: 450MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
|
Package: SC-75, SOT-416 |
Stock4,304 |
|
500mA | 40V | 250mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 2V | 250mW | 450MHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75 |
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|
STMicroelectronics |
TRANS NPN 700V 10A ISOWATT218FX
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 700V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.25A, 5A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 5A, 5V
- Power - Max: 57W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOWATT218FX
- Supplier Device Package: ISOWATT-218FX
|
Package: ISOWATT218FX |
Stock8,736 |
|
10A | 700V | 2V @ 1.25A, 5A | 200µA | 5.5 @ 5A, 5V | 57W | - | 150°C (TJ) | Through Hole | ISOWATT218FX | ISOWATT-218FX |
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Diodes Incorporated |
TRANS NPN 50V 4A 3MLP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 3W
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerSMD, Flat Leads
- Supplier Device Package: 3-MLP/DFN (2x2)
|
Package: 3-PowerSMD, Flat Leads |
Stock6,240 |
|
4A | 50V | 320mV @ 200mA, 4A | 25nA | 100 @ 2A, 2V | 3W | 165MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerSMD, Flat Leads | 3-MLP/DFN (2x2) |
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Fairchild/ON Semiconductor |
TRANS NPN 150V 0.05A TO-92L
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock360,000 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 120 @ 10mA, 5V | 800mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92-3 |
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|
Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 450mW
- Frequency - Transition: 270MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,728 |
|
100mA | 45V | 300mV @ 5mA, 100mA | 50nA (ICBO) | 100 @ 1mA, 5V | 450mW | 270MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.8A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,528 |
|
800mA | 25V | 400mV @ 20mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 200mW | 120MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Diodes Incorporated |
TRANS NPN 75V 3A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 75V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock3,392 |
|
3A | 75V | 350mV @ 100mA, 3A | 10nA | 300 @ 1A, 2V | 1W | 140MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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|
Fairchild/ON Semiconductor |
TRANS PNP 20V 1.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 45MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,832 |
|
1.5A | 20V | 500mV @ 100mA, 1A | 10µA (ICBO) | 85 @ 500mA, 1V | 625mW | 45MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS PNP 100V 25A TO-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 12A, 4V
- Power - Max: 125W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock6,640 |
|
25A | 100V | 1.5V @ 1.2A, 12A | 10µA (ICBO) | 40 @ 12A, 4V | 125W | 20MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Panasonic Electronic Components |
TRANS NPN 10V 0.08A MINI-3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Power - Max: 200mW
- Frequency - Transition: 6GHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,336 |
|
80mA | 10V | - | 1µA (ICBO) | 50 @ 20mA, 8V | 200mW | 6GHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 |
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Diodes Incorporated |
TRANS PNP 25V 3A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 135MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock12,048 |
|
3A | 25V | 300mV @ 70mA, 3A | 100nA | 250 @ 500mA, 2V | 1W | 135MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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ON Semiconductor |
TRANS PNP DARL 80V 4A TO225
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
|
Package: TO-225AA, TO-126-3 |
Stock16,164 |
|
4A | 80V | 2.5V @ 30mA, 1.5A | 500µA | 750 @ 1.5A, 3V | 40W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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Aeroflex Metelics, Division of MACOM |
DIODE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock6,528 |
|
2A | 80V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Nexperia USA Inc. |
TRANS NPN DARL 30V 0.5A SOT23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,352 |
|
500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 20000 @ 100mA, 5V | 250mW | 125MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Rohm Semiconductor |
TRANS NPN 30V 0.1A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
|
Package: SC-70, SOT-323 |
Stock82,344 |
|
100mA | 30V | 600mV @ 5mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 5V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
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|
STMicroelectronics |
TRANS PNP 30V 3A SOT23-6
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 1.2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
|
Package: SOT-23-6 |
Stock5,023,956 |
|
3A | 30V | 500mV @ 20mA, 2A | 100nA (ICBO) | 100 @ 500mA, 1V | 1.2W | - | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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Sanken |
TRANS NPN 80V 3A TO220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
- Power - Max: 25W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
|
Package: TO-220-3 Full Pack |
Stock5,184 |
|
3A | 80V | 500mV @ 50mA, 2A | 10µA (ICBO) | 500 @ 500mA, 4V | 25W | 15MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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NTE Electronics, Inc |
TRANS NPN 800V 10A TO3PML
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 1.6A, 8A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
- Power - Max: 70 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PML
|
Package: - |
Request a Quote |
|
10 A | 800 V | 5V @ 1.6A, 8A | 1mA | 8 @ 1A, 5V | 70 W | - | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PML |
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|
Microchip Technology |
TRANS PNP 40V 1A TO5
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
- Power - Max: 1 W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
1 A | 40 V | 1.2V @ 100mA, 1A | 100nA (ICBO) | 40 @ 500mA, 1V | 1 W | 175MHz | -55°C ~ 175°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Nexperia USA Inc. |
TRANS PNP 65V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: - |
Request a Quote |
|
100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 200 mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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NTE Electronics, Inc |
TRANS NPN 80V 1A TO237
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
- Power - Max: 850 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
|
Package: - |
Request a Quote |
|
1 A | 80 V | 1.5V @ 100mA, 1A | 100nA (ICBO) | 40 @ 250mA, 2V | 850 mW | 50MHz | 150°C (TJ) | Through Hole | TO-237AA | TO-237 |
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|
Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 300mA, 1.5A
- Current - Collector Cutoff (Max): 25µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
6 A | 40 V | 3V @ 300mA, 1.5A | 25µA (ICBO) | 15 @ 1.5A, 4V | 75 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
|
|
Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 10nA | 100 @ 150mA, 10V | 800 mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 45 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
|
Package: - |
Request a Quote |
|
10 A | 80 V | - | - | - | 45 W | - | - | Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
|
|
Microchip Technology |
TRANS PNP 175V 1A TO66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
1 A | 175 V | - | - | - | 35 W | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 60 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
|
Package: - |
Request a Quote |
|
10 A | 100 V | 1.2V @ 100µA, 2mA | - | - | 60 W | - | -65°C ~ 200°C (TJ) | Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
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|
onsemi |
IC
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
Request a Quote |
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1 A | 80 V | 1V @ 100mA, 1A | 25nA | 100 @ 100mA, 5V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |