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Fairchild/ON Semiconductor |
TRANS PNP 45V 1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,456 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1W | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 80V 8A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 2V
- Power - Max: 50W
- Frequency - Transition: 12MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock7,872 |
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8A | 80V | 800mV @ 200mA, 2A | 100µA | 30 @ 2A, 2V | 50W | 12MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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ON Semiconductor |
TRANS PNP 250V 8A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock80,028 |
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8A | 250V | 500mV @ 100mA, 1A | 10µA (ICBO) | 10 @ 2A, 5V | 2W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Microsemi Corporation |
TRANS PNP 175V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 175V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock3,632 |
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1A | 175V | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Nexperia USA Inc. |
TRANS PNP 32V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,000 |
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100mA | 32V | 550mV @ 1.25mA, 50mA | 20nA (ICBO) | 250 @ 2mA, 5V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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TSC America Inc. |
TRANSISTOR, NPN, 65V, 0.1A, 420A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,832 |
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100mA | 65V | - | 15nA (ICBO) | 420 @ 2mA, 5V | 500mW | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Diodes Incorporated |
TRANS NPN 20V 1A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock110,376 |
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1A | 20V | 500mV @ 100mA, 1A | 100nA (ICBO) | 160 @ 500mA, 1V | 1W | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Sanken |
TRANS NPN 400V 10A TO3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 6A, 4V
- Power - Max: 80W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock13,248 |
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10A | 400V | 500mV @ 1.2A, 6A | 100µA (ICBO) | 10 @ 6A, 4V | 80W | 10MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Nexperia USA Inc. |
TRANS NPN 300V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 250mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,520 |
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100mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 250mW | 50MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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ON Semiconductor |
TRANS NPN 350V 15A TO264
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
- Power - Max: 230W
- Frequency - Transition: 35MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
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Package: TO-264-3, TO-264AA |
Stock6,816 |
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15A | 350V | 1V @ 800mA, 8A | 100µA | 80 @ 5A, 5V | 230W | 35MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 |
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Sanken |
TRANS NPN 50V 10A TO220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 4V
- Power - Max: 35W
- Frequency - Transition: 24MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock87,576 |
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10A | 50V | 500mV @ 100mA, 5A | 10µA (ICBO) | 300 @ 1A, 4V | 35W | 24MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Diodes Incorporated |
TRANS NPN 400V 0.5A SOT23F-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 175mV @ 100mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Power - Max: 1.5W
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3 Flat Leads
- Supplier Device Package: SOT-23F
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Package: SOT-23-3 Flat Leads |
Stock89,520 |
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500mA | 400V | 175mV @ 100mA, 500mA | 50nA (ICBO) | 100 @ 50mA, 5V | 1.5W | 40MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F |
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NTE Electronics, Inc |
TRANS NPN 800V 5A TO3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
- Power - Max: 120 W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: - |
Request a Quote |
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5 A | 800 V | 5V @ 800mA, 4A | 10µA (ICBO) | 8 @ 1A, 5V | 120 W | 3MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Microchip Technology |
TRANS PNP 80V 2A U3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1.16 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 1mA | 70 @ 2.5A, 5V | 1.16 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U3 |
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Microchip Technology |
TRANS PNP 80V 2A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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onsemi |
TRANS GP BJT PNP 32V 0.1A 3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
- Power - Max: 225 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
|
100 mA | 32 V | 550mV @ 1.25mA, 50mA | 20nA | 140 @ 2mA, 5V | 225 mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Rohm Semiconductor |
TRANS NPN 100V 0.1A SST3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
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Package: - |
Request a Quote |
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100 mA | 100 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 30 @ 25mA, 1V | 200 mW | 140MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
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onsemi |
NPN TRIPLE DIFFUSED PLANAR SIL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1.2A, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.2A, 5V
- Power - Max: 1.75 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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10 A | 400 V | 800mV @ 1.2A, 6A | 10µA (ICBO) | 20 @ 1.2A, 5V | 1.75 W | 20MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Diodes Incorporated |
TRANS NPN 400V 0.5A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: - |
Request a Quote |
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500 mA | 400 V | 500mV @ 10mA, 100mA | 100nA (ICBO) | 50 @ 100mA, 5V | 1 W | 50MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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Renesas Electronics Corporation |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: - |
Request a Quote |
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10 A | 120 V | 3V @ 100mA, 10A | 10µA | 1000 @ 5A, 3V | 80 W | - | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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onsemi |
TRANS PNP 40V 0.2A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
200 mA | 40 V | 400mV @ 5mA, 50mA | 50nA | 100 @ 10mA, 1V | 350 mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microchip Technology |
TRANS NPN 40V 3A TO8
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A
- Current - Collector Cutoff (Max): 15µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V
- Power - Max: 1.75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-233AA, TO-8-3 Metal Can
- Supplier Device Package: TO-8
|
Package: - |
Request a Quote |
|
3 A | 40 V | 1.20V @ 75mA, 750A | 15µA | 20 @ 750mA, 4V | 1.75 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-233AA, TO-8-3 Metal Can | TO-8 |
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Sanyo |
PNP EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
BCX56-16-Q/SOT89/MPT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
|
1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 500 mW | 180MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR SOT223 T&
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 70 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
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2 A | 70 V | 500mV @ 200mA, 2A | 50nA | 500 @ 100mA, 2V | 1.2 W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Central Semiconductor Corp |
TRANS NPN 80V 0.5A DIE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: -
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
500 mA | 80 V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | - | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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onsemi |
PNP EPITAXIAL PLANAR SILICON
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: 3-MP
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Package: - |
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1 A | 50 V | 700mV @ 50mA, 500mA | 1µA (ICBO) | 100 @ 50mA, 2V | 900 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 3-MP |
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Panjit International Inc. |
TRANS NPN 300V 0.5A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock8,700 |
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500 mA | 300 V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 250 mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |