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Infineon Technologies |
TRANS NPN 45V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock6,160 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 2W | 100MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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Central Semiconductor Corp |
TRANS NPN BIPOLAR TO220
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 150mA, 7.5A
- Current - Collector Cutoff (Max): 200µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 7.5A, 3V
- Power - Max: 70W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock5,984 |
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10A | 100V | 2.5V @ 150mA, 7.5A | 200µA (ICBO) | 100 @ 7.5A, 3V | 70W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 1.5A TO226
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-226
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock2,832 |
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1.5A | 30V | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226 |
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ON Semiconductor |
TRANS PNP DARL 100V 2A TO-225
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 6MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock150,600 |
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2A | 100V | 3V @ 1.2mA, 120mA | 1mA | 1500 @ 120mA, 10V | 1.5W | 6MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,736 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 380 @ 2mA, 5V | 350mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 100V 25A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
- Power - Max: 200W
- Frequency - Transition: 40MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock6,112 |
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25A | 100V | 1.8V @ 2.5A, 25A | 50µA | 30 @ 10A, 2V | 200W | 40MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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ON Semiconductor |
TRANS PNP 80V 0.5A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,944 |
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500mA | 80V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,232 |
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500mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 140 @ 2mA, 5V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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STMicroelectronics |
TRANS PNP DARL 80V 10A TO-220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Power - Max: 65W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock14,976 |
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10A | 80V | 3V @ 100mA, 10A | 1mA | 1000 @ 5A, 3V | 65W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Package: SC-70, SOT-323 |
Stock2,256 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 |
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Panasonic Electronic Components |
TRANS PNP 40V 1.5A TO-126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 10W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock6,132 |
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1.5A | 40V | 1V @ 150mA, 1.5A | 100µA | 80 @ 1A, 5V | 10W | 150MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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ON Semiconductor |
TRANS PNP 100V 4A TP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,048 |
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4A | 100V | 500mV @ 200mA, 2A | 1µA (ICBO) | 200 @ 500mA, 5V | 1W | 130MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP |
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Diodes Incorporated |
TRANS NPN 45V 500MA SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 310mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,048 |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 310mW | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Nexperia USA Inc. |
TRANS PNP DARL 80V 1A SOT223
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.25W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock6,048 |
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1A | 80V | 1.3V @ 500µA, 500mA | 50nA | 2000 @ 500mA, 10V | 1.25W | 200MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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ON Semiconductor |
TRANS PNP 60V 0.6A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock64,190,028 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 300mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Rohm Semiconductor |
TRANS NPN 50V 6A HUML2020L3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
- Power - Max: 1 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: HUML2020L3
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Package: - |
Stock6,495 |
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6 A | 50 V | 350mV @ 150mA, 3A | 1µA (ICBO) | 180 @ 500mA, 3V | 1 W | 200MHz | 150°C (TJ) | Surface Mount | 3-UDFN Exposed Pad | HUML2020L3 |
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Central Semiconductor Corp |
TRANS NPN 30V 0.8A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
Stock5,058 |
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800 mA | 30 V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 800 mW | 250MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Central Semiconductor Corp |
TRANS NPN 65V SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: -
- Frequency - Transition: 100MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock53,655 |
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- | 65 V | 250mV @ 500µA, 10mA | 15nA (ICBO) | 200 @ 2mA, 5V | - | 100MHz | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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onsemi |
TRANSISTOR NPN 250V TO-3P
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Diotec Semiconductor |
BJT SOT23 30V NPN 0.25W 150C
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: - |
Request a Quote |
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100 mA | 30 V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250 mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
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500 mA | 100 V | 600mV @ 30mA, 300mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Micro Commercial Co |
TRANS NPN 40V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
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1 A | 40 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 60 @ 100mA, 1V | 625 mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Diodes Incorporated |
PWR MID PERF TRANSISTOR POWERDI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
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Package: - |
Stock5,940 |
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5 A | 100 V | 220mV @ 500mA, 5A | 20nA | 200 @ 1A, 2V | 1.2 W | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PowerDI3333-8 (SWP) Type UX |
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Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Nexperia USA Inc. |
BCP54-Q/SOT223/SC-73
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 650 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
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1 A | 45 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 650 mW | 180MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Microchip Technology |
TRANS PNP DARL 80V 500UA TO66
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500 µA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1A, 3V
- Power - Max: 64 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: - |
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500 µA | 80 V | 2V @ 80mA, 8A | 500µA | 500 @ 1A, 3V | 64 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Sanyo |
NPN EPITAXIAL PLANAR SILICON
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SSIP
- Supplier Device Package: 3-SPA
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Package: - |
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500 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 100 @ 10mA, 5V | 300 mW | 200MHz | 150°C (TJ) | Through Hole | 3-SSIP | 3-SPA |