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ON Semiconductor |
TRANS NPN 50V 3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 380MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock3,744 |
|
3A | 50V | 290mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 100mA, 2V | 1.3W | 380MHz | - | Surface Mount | TO-243AA | PCP |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,872 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN 50V 0.15A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,656 |
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150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 500mW | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 750V 10A TO-3PF
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 750V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
- Power - Max: 60W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PF
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Package: SC-94 |
Stock3,072 |
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10A | 750V | 3V @ 1.5A, 6A | 1mA | 5 @ 6A, 5V | 60W | - | 150°C (TJ) | Through Hole | SC-94 | TO-3PF |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 2A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 5V
- Power - Max: 15W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock6,944 |
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2A | 400V | 1V @ 100mA, 500mA | 10µA (ICBO) | 40 @ 100mA, 5V | 15W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,640 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA | 250 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 160V 0.6A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,640 |
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600mA | 160V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 50V 7A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
- Power - Max: 40W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock5,536 |
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7A | 50V | 3.5V @ 3A, 7A | 1mA | 30 @ 2.5A, 4V | 40W | 10MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Microsemi Corporation |
TRANS PNP 15V 0.03A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
- Power - Max: 200mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock3,536 |
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30mA | 15V | 350mV @ 1mA, 10mA | 10µA (ICBO) | 30 @ 10mA, 1V | 200mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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ON Semiconductor |
TRANS NPN 40V 0.6A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 300MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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Package: TO-261-4, TO-261AA |
Stock3,808 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 1.5W | 300MHz | - | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Nexperia USA Inc. |
BCW66GSOT23TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,224 |
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800mA | 45V | 450mV @ 50mA, 500mA | 5µA (ICBO) | 160 @ 100mA, 1V | 250mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,273,576 |
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500mA | 45V | 620mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 300mW | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A USM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Package: SC-70, SOT-323 |
Stock1,080,000 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 350 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | USM |
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Nexperia USA Inc. |
TRANS PNP 100V 2A 6TSOP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 395mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 145 @ 1A, 2V
- Power - Max: 1.1W
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock22,740 |
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2A | 100V | 395mV @ 300mA, 3A | 100nA | 145 @ 1A, 2V | 1.1W | 110MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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ON Semiconductor |
TRANS NPN 15V 0.7A MCP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 330MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
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Package: SC-70, SOT-323 |
Stock93,720 |
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700mA | 15V | 300mV @ 10mA, 200mA | 100nA (ICBO) | 300 @ 10mA, 2V | 300mW | 330MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | 3-MCP |
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ON Semiconductor |
TRANS NPN DARL 60V 4A TO225
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock16,458 |
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4A | 60V | 2.8V @ 40mA, 2A | 500µA | 750 @ 2A, 3V | 40W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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Central Semiconductor Corp |
TRANS NPN 25V 0.05A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 275 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Stock35,580 |
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50 mA | 25 V | 500mV @ 1mA, 10mA | 50nA | 400 @ 100µA, 5V | 275 mW | 50MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR SOT223 T&
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 440mV @ 500mA, 5.5A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 3 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
|
Package: - |
Request a Quote |
|
5.5 A | 30 V | 440mV @ 500mA, 5.5A | 50nA | 100 @ 1A, 1V | 3 W | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |
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Microchip Technology |
TRANS NPN 100V 0.75A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 750 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
750 mA | 100 V | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Central Semiconductor Corp |
TRANS PNP 65V 0.1A SOT523
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SOT-523
|
Package: - |
Stock21,534 |
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100 mA | 65 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 250 mW | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | SOT-523 |
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Nexperia USA Inc. |
TRANS NPN 65V 0.1A TO236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
|
Package: - |
Request a Quote |
|
100 mA | 65 V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 250 mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
1 A | 350 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -55°C ~ 200°C | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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onsemi |
POWER DARLINGTON CHIP
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS PNP 350V 0.005A TO66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 mA
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
- Power - Max: 3 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
5 mA | 350 V | 2V @ 125mA, 1A | 5mA | 30 @ 1A, 5V | 3 W | - | -55°C ~ 200°C (TA) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Microchip Technology |
TRANS PNP 140V 1A 3SMD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
1 A | 140 V | 600mV @ 5mA, 50mA | 10µA | 50 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Micro Commercial Co |
Interface
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
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100 mA | 30 V | 650mV @ 5mA, 100mA | 15nA | 420 @ 2mA, 5V | 150 mW | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |