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ON Semiconductor |
TRANS PNP 50V 1A NMP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: 3-NMP
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Package: SC-71 |
Stock28,800 |
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1A | 50V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 200 @ 100mA, 2V | 900mW | 150MHz | 150°C (TJ) | Through Hole | SC-71 | 3-NMP |
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ON Semiconductor |
TRANS PNP 60V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock120,000 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA | 100 @ 150mA, 10V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 100V 6A D2PAK-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,768 |
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6A | 100V | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2W | 3MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK |
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Diodes Incorporated |
TRANS PNP 12V 5A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 2.5W
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock7,184 |
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5A | 12V | 400mV @ 50mA, 5A | 100nA | 250 @ 500mA, 2V | 2.5W | 115MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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ON Semiconductor |
TRANS NPN 25V 0.05A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,735,360 |
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50mA | 25V | 500mV @ 1mA, 10mA | 50nA (ICBO) | 400 @ 100µA, 5V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Microsemi Corporation |
TRANS NPN 15V TO18
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
- Power - Max: 360mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock3,536 |
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- | 15V | 450mV @ 10mA, 100mA | 400nA | 20 @ 100mA, 1V | 360mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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Fairchild/ON Semiconductor |
TRANS PNP 120V 0.05A TO92-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,200 |
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50mA | 120V | 300mV @ 1mA, 10mA | 1µA | 200 @ 1mA, 6V | 500mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Nexperia USA Inc. |
TRANS NPN 12V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 400nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,366 |
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100mA | 12V | 400mV @ 5mA, 50mA | 400nA (ICBO) | 40 @ 10mA, 1V | 250mW | 500MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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Fairchild/ON Semiconductor |
TRANS NPN 120V 0.8A TO-92L
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock18,786 |
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800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 120 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.15A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Power - Max: 250mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock33,030 |
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150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 1mA, 6V | 250mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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onsemi |
BIP T0220 NPN SPECIAL LF
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Sanken Electric USA Inc. |
TRANS NPN DARL 65V 6A TO220F
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 15mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 700 @ 1A, 1V
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: - |
Request a Quote |
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6 A | 65 V | 150mV @ 15mA, 1.5A | 10µA (ICBO) | 700 @ 1A, 1V | 30 W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Micro Commercial Co |
TRANS NPN 45V 0.5A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 300 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
TRANS NPN 60V 8A TO3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 100 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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8 A | 60 V | 3V @ 80mA, 8A | 500µA | 750 @ 4A, 3V | 100 W | 4MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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onsemi |
BIP NPN 1A 400V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
SMALL SIGNAL BIPOLAR IN DFN PACK
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 340 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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Package: - |
Stock14,700 |
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100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 340 mW | 100MHz | 150°C (TJ) | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 |
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Panjit International Inc. |
TRANS PNP 45V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Request a Quote |
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100 mA | 45 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 330 mW | 200MHz | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Nexperia USA Inc. |
PBHV9040T-Q/SOT23/TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 250 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 300 mW
- Frequency - Transition: 55MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Request a Quote |
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250 mA | 400 V | 200mV @ 20mA, 100mA | 100nA | 100 @ 50mA, 10V | 300 mW | 55MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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onsemi |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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100 mA | 65 V | 600mV @ 5mA, 100mA | 15nA | 110 @ 2mA, 5V | 500 mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
TRANS NPN 60V 1.5A TO126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: - |
Request a Quote |
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1.5 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 1.25 W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Nexperia USA Inc. |
TRANS PNP 20V 2A 3HUSON
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 420 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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Package: - |
Request a Quote |
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2 A | 20 V | 600mV @ 200mA, 2A | 100nA (ICBO) | 85 @ 500mA, 1V | 420 mW | 170MHz | 150°C (TJ) | Surface Mount | 3-PowerUDFN | 3-HUSON (2x2) |
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onsemi |
TRANS NPN 50V 2A DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 1.68 W
- Frequency - Transition: 65MHz
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: - |
Stock9,852 |
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2 A | 50 V | 300mV @ 50mA, 1A | 100nA (ICBO) | 120 @ 500mA, 2V | 1.68 W | 65MHz | -65°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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NTE Electronics, Inc |
TRANS NPN DARL 100V 12A TO3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: - |
Request a Quote |
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12 A | 100 V | 3V @ 120mA, 12A | 1mA | 750 @ 6A, 3V | 150 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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onsemi |
SMALL SIGNAL BIPOLAR TRANS PNP
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
- Power - Max: 900 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: 3-MP
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Package: - |
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1.5 A | 50 V | 1.5V @ 500µA, 500mA | 100nA (ICBO) | 4000 @ 500mA, 2V | 900 mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 3-MP |
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Nexperia USA Inc. |
2PD601ART-Q/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
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100 mA | 50 V | 250mV @ 10mA, 100mA | 10nA (ICBO) | 210 @ 2mA, 10V | 250 mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |