|
|
Fairchild/ON Semiconductor |
TRANS PNP 140V 10A TO-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Power - Max: 100W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock3,504 |
|
10A | 140V | 500mV @ 500mA, 5A | 10µA (ICBO) | 50 @ 3A, 4V | 100W | 30MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 25V 2A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-226
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock100,548 |
|
2A | 25V | 500mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 1A, 2V | 1W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-226 |
|
|
Fairchild/ON Semiconductor |
TRANS PNP 150V 0.7A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,624 |
|
700mA | 150V | 400mV @ 20mA, 200mA | 100nA (ICBO) | 70 @ 50mA, 2V | 800mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Diodes Incorporated |
TRANS PNP 12V 3A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 2W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock2,064 |
|
3A | 12V | 320mV @ 50mA, 3A | 100nA (ICBO) | 300 @ 100mA, 2V | 2W | 110MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN DARL 40V 1.2A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,496 |
|
1.2A | 40V | 1.4V @ 200µA, 200mA | 100nA (ICBO) | 7000 @ 2mA, 5V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
TRANS PNP 60V 0.5A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,344 |
|
500mA | 60V | 400mV @ 5mA, 100mA | 100nA | 100 @ 1mA, 5V | 625mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Central Semiconductor Corp |
TRANS NPN HI CURRENT CHIP FORM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: -
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: Die |
Stock6,080 |
|
1A | 80V | 500mV @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | - | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
Microsemi Corporation |
TRANS NPN 400V 3.5A TO3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 700mA, 3.5A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
- Power - Max: 5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
|
Package: TO-204AA, TO-3 |
Stock4,160 |
|
3.5A | 400V | 2.5V @ 700mA, 3.5A | 250µA | 30 @ 1A, 5V | 5W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
|
|
Microsemi Corporation |
TRANS NPN 60V 3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 5µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock3,424 |
|
3A | 60V | 500mV @ 200mA, 2A | 5µA | 40 @ 1A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
|
|
Microsemi Corporation |
TRANS NPN 50V 0.8A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: 3-SMD, No Lead |
Stock2,704 |
|
800mA | 50V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
STMicroelectronics |
TRANS PNP DARL 80V 25A TO-247
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 25A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
- Power - Max: 130W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
|
Package: TO-247-3 |
Stock18,900 |
|
25A | 80V | 3.5V @ 80mA, 20A | 500µA | 500 @ 10A, 3V | 130W | - | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
Nexperia USA Inc. |
TRANS PNP 60V 1A DFN1010D-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
- Power - Max: 325mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
|
Package: 3-XDFN Exposed Pad |
Stock2,416 |
|
1A | 60V | 460mV @ 50mA, 1A | 100nA (ICBO) | 85 @ 1A, 2V | 325mW | 150MHz | 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 |
|
|
Micro Commercial Co |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock52,038 |
|
800mA | 45V | 700mV @ 50mA, 500mA | 200nA | 160 @ 100mA, 1V | 625mW | 260MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
|
|
Nexperia USA Inc. |
TRANS NPN 32V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock27,318 |
|
100mA | 32V | 550mV @ 1.25mA, 50mA | 20nA (ICBO) | 250 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
|
|
Fairchild/ON Semiconductor |
TRANS PNP DARL 30V 1.2A SOT23
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock23,136 |
|
1.2A | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 350mW | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Sanken |
TRANS PNP DARL 150V 10A TO-3P
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Power - Max: 100W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock146,160 |
|
10A | 150V | 2.5V @ 7mA, 7A | 100µA (ICBO) | 5000 @ 7A, 4V | 100W | 50MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
|
|
STMicroelectronics |
TRANS NPN 100V 3A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
|
Package: TO-220-3 |
Stock225,720 |
|
3A | 100V | 1.2V @ 600mA, 3A | 300µA | 10 @ 3A, 4V | 40W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
|
|
Central Semiconductor Corp |
TRANS NPN 25V 0.05A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,735,360 |
|
50mA | 25V | 500mV @ 1mA, 10mA | 50nA (ICBO) | 400 @ 100µA, 5V | 625mW | 50MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
|
|
Micro Commercial Co |
TRANS PNP 60V 0.6A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 600mW
- Frequency - Transition: 200MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock93,762 |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 100nA (ICBO) | 100 @ 10mA, 10V | 600mW | 200MHz | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
|
|
NTE Electronics, Inc |
TRANS NPN DARL 400V 10A TO220
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 70mA, 7A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 7A, 2V
- Power - Max: 50 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
|
Package: - |
Request a Quote |
|
10 A | 400 V | 1.5V @ 70mA, 7A | 100µA | 150 @ 7A, 2V | 50 W | 10MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
|
|
Harris Corporation |
TRANS NPN 40V 0.75A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 750 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: - |
Request a Quote |
|
750 mA | 40 V | 750mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 2mA, 2V | 500 mW | 120MHz | -55°C ~ 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
Micro Commercial Co |
TRANS NPN 60V 3A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: - |
Request a Quote |
|
3 A | 60 V | 1V @ 300mA, 3A | 100µA (ICBO) | 60 @ 500mA, 5V | 1.5 W | 3MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
|
|
Microchip Technology |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 325 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
2 A | 325 V | - | - | - | 100 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
|
|
Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: - |
Request a Quote |
|
5 A | 40 V | - | - | - | 30 W | - | - | Stud Mount | TO-111-4, Stud | TO-111 |
|
|
Microchip Technology |
PNP TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
onsemi |
TRANS NPN DARL 30V 1.2A TO92-3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
|
Package: - |
Stock92,313 |
|
1.2 A | 30 V | 1V @ 100µA, 100mA | 100nA (ICBO) | 30000 @ 20mA, 2V | 625 mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
|
|
Microsemi Corporation |
TRANSISTOR NPN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |