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Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,096 |
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50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Microsemi Corporation |
TRANS PNP 40V 0.6A TO-39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 800mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock7,632 |
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600mA | 40V | 1.6V @ 50mA, 500mA | 1µA | 40 @ 150mA, 10V | 800mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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STMicroelectronics |
TRANS NPN 80V 4A SOT-32
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
- Power - Max: 36W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32
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Package: TO-225AA, TO-126-3 |
Stock188,532 |
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4A | 80V | 800mV @ 200mA, 2A | 100µA | 40 @ 500mA, 1V | 36W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32 |
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ON Semiconductor |
TRANS NPN 50V 0.15A CP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,008 |
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150mA | 50V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 135 @ 1mA, 6V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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ON Semiconductor |
TRANS NPN 500V 4A TO-220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 500V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
- Power - Max: 50W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock4,592 |
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4A | 500V | 1V @ 1A, 3A | 100µA | 5 @ 2A, 5V | 50W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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ON Semiconductor |
TRANS NPN 500V 4A TO-220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 500V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
- Power - Max: 50W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock7,968 |
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4A | 500V | 1V @ 1A, 3A | 100µA | 5 @ 2A, 5V | 50W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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ON Semiconductor |
TRANS NPN DARL 45V 4A TO225
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock5,232 |
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4A | 45V | 2.8V @ 40mA, 2A | 500µA | 750 @ 2A, 3V | 40W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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ON Semiconductor |
TRANS NPN 40V 0.6A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock208,704 |
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600mA | 40V | 750mV @ 50mA, 500mA | - | 100 @ 150mA, 1V | 625mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 20V 5A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock4,128 |
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5A | 20V | 1V @ 100mA, 4A | 500nA | 180 @ 500mA, 2V | 500mW | - | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 160V 0.6A SSOT-6
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 700mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,472 |
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600mA | 160V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 700mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Panasonic Electronic Components |
TRANS PNP 80V 10A TOP-3F
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 2V
- Power - Max: 3W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TOP-3F
- Supplier Device Package: TOP-3F-A1
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Package: TOP-3F |
Stock3,984 |
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10A | 80V | 1.5V @ 1A, 10A | 10µA (ICBO) | 90 @ 3A, 2V | 3W | 30MHz | 150°C (TJ) | Through Hole | TOP-3F | TOP-3F-A1 |
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ON Semiconductor |
TRANS PNP 32V 4A TO225
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 36W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock236,532 |
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4A | 32V | 500mV @ 200mA, 2A | 100µA (ICBO) | 85 @ 500mA, 1V | 36W | 3MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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STMicroelectronics |
TRANS PNP 25V 5A SOT-32
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
- Power - Max: 1.5W
- Frequency - Transition: 65MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
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Package: TO-225AA, TO-126-3 |
Stock334,872 |
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5A | 25V | 1.8V @ 1A, 5A | 100nA (ICBO) | 45 @ 2A, 1V | 1.5W | 65MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32-3 |
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Microsemi Corporation |
TRANS PNP 175V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 175V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
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Package: 3-SMD, No Lead |
Stock3,296 |
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1A | 175V | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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ON Semiconductor |
TRANS PNP 100V 1A CPH3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
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Package: SC-96 |
Stock72,000 |
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1A | 100V | 600mV @ 40mA, 400mA | 100nA (ICBO) | 140 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Surface Mount | SC-96 | 3-CPH |
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STMicroelectronics |
TRANS PNP 80V 1.5A SOT89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 2V
- Power - Max: 1.4W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock2,000 |
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1.5A | 80V | 500mV @ 100mA, 1A | 1mA | 30 @ 1A, 2V | 1.4W | 50MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Nexperia USA Inc. |
TRANSISTOR PNP 20V 2A SOT1061
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 420mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020-3
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Package: 3-UDFN |
Stock25,698 |
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2A | 20V | 600mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 500mA, 1V | 420mW | 140MHz | 150°C (TJ) | Surface Mount | 3-UDFN | DFN2020-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 100V 3A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock57,924 |
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3A | 100V | 1.2V @ 375mA, 3A | 300µA | 10 @ 3A, 4V | 2W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
TRANS NPN 50V 0.5A CPH3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 700mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CPH
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock75,612 |
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500mA | 50V | 100mV @ 10mA, 100mA | 100nA (ICBO) | 300 @ 10mA, 2V | 700mW | 500MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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onsemi |
TRANS PNP 20V 0.3A TO126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
- Power - Max: 1.2 W
- Frequency - Transition: 1.5GHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
|
Package: - |
Request a Quote |
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300 mA | 20 V | 1V @ 10mA, 100mA | 100nA (ICBO) | 15 @ 50mA, 5V | 1.2 W | 1.5GHz | - | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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STMicroelectronics |
TRANS NPN 400V 1.5A SOT32
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
|
Package: - |
Request a Quote |
|
1.5 A | 400 V | 1.5V @ 500mA, 1.5A | 1mA | 5 @ 1A, 2V | 40 W | - | -40°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32-3 |
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Nexperia USA Inc. |
BCP55-16-Q/SOT223/SC-73
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 650 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
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1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 650 mW | 180MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Microchip Technology |
NPN POWER SILICON TRANSISTORS
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
1 A | 175 V | 600mV @ 5mA, 50mA | 10µA | 100 @ 50mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
TRANS NPN 80V 1A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
1 A | 80 V | 500mV @ 50mA, 500mA | 10µA (ICBO) | 50 @ 500mA, 10V | 800 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Nexperia USA Inc. |
BSR41-Q/SOT89/MPT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1.35 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
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1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 5V | 1.35 W | 100MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 2.5 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: - |
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5 A | 200 V | 400mV @ 300mA, 3A | 200nA | 40 @ 1A, 5V | 2.5 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |