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Fairchild/ON Semiconductor |
TRANS NPN 120V 0.2A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
- Power - Max: 1.3W
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
|
Package: TO-225AA, TO-126-3 |
Stock840,000 |
|
200mA | 120V | 1V @ 3mA, 30mA | 100nA (ICBO) | 60 @ 10mA, 10V | 1.3W | 400MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 0.7A TO-92L
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 Long Body |
Stock7,584 |
|
700mA | 60V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 120 @ 50mA, 2V | 1W | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.7A TO-92S
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 160MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock2,688 |
|
700mA | 25V | 400mV @ 70mA, 700mA | 100nA (ICBO) | 120 @ 100mA, 1V | 350mW | 160MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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|
Fairchild/ON Semiconductor |
TRANS PNP 40V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,104 |
|
800mA | 40V | 1.6V @ 50mA, 500mA | 20nA (ICBO) | 100 @ 150mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Diodes Incorporated |
TRANS NPN 300V 0.5A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock7,712 |
|
500mA | 300V | 500mV @ 10mA, 100mA | 100nA (ICBO) | 50 @ 100mA, 5V | 1W | 30MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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|
Fairchild/ON Semiconductor |
TRANS NPN 60V 1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock1,747,440 |
|
1A | 60V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1W | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Panasonic Electronic Components |
TRANS PNP 80V 0.5A TO-92L
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92
|
Package: TO-226-3, TO-92-3 Long Body |
Stock7,216 |
|
500mA | 80V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 130 @ 150mA, 10V | 1W | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92 |
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Nexperia USA Inc. |
TRANS PNP 50V 0.5A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock2,704 |
|
500mA | 50V | 600mV @ 30mA, 300mA | 100nA (ICBO) | 120 @ 150mA, 10V | 200mW | 120MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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ON Semiconductor |
TRANS PNP DARL 150V 15A TO247
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Power - Max: 150W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
|
Package: TO-247-3 |
Stock6,560 |
|
15A | 150V | 4V @ 150mA, 15A | 1mA | 400 @ 10A, 5V | 150W | 3MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 |
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Rohm Semiconductor |
NPN 50V 1A MEDIUM POWER TRANSIST
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 360MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
|
Package: TO-243AA |
Stock21,072 |
|
1A | 50V | 350mV @ 25mA, 500mA | 1µA (ICBO) | 180 @ 50mA, 2V | 500mW | 360MHz | 150°C (TJ) | Surface Mount | TO-243AA | MPT3 |
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|
ON Semiconductor |
TRANS NPN 20V 5A SOT89-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
|
Package: TO-243AA |
Stock284,400 |
|
5A | 20V | 500mV @ 60mA, 3A | 100nA (ICBO) | 120 @ 500mA, 2V | 500mW | 120MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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Nexperia USA Inc. |
TRANS PNP 30V 3A SOT1061
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 2V
- Power - Max: 2.1W
- Frequency - Transition: 165MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: 3-HUSON (2x2)
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Package: 3-UDFN |
Stock21,642 |
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3A | 30V | 320mV @ 300mA, 3A | 100nA | 175 @ 1A, 2V | 2.1W | 165MHz | 150°C (TJ) | Surface Mount | 3-UDFN | 3-HUSON (2x2) |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 320mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,080 |
|
150mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 100 @ 10mA, 1V | 320mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Nexperia USA Inc. |
TRANS PNP 45V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock87,150 |
|
100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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|
Rohm Semiconductor |
TRANS PNP 50V 0.15A EMT3F
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
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Package: SC-89, SOT-490 |
Stock13,320 |
|
150mA | 50V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 140MHz | 150°C (TJ) | Surface Mount | SC-89, SOT-490 | EMT3F (SOT-416FL) |
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Rohm Semiconductor |
TRANS NPN 50V 0.15A SOT-346
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,241,240 |
|
150mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 270 @ 1mA, 6V | 200mW | 180MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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ON Semiconductor |
TRANS PNP 100V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
- Power - Max: 225mW
- Frequency - Transition: 95MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock592,128 |
|
100mA | 100V | 250mV @ 2.5mA, 25mA | 100nA (ICBO) | 30 @ 25mA, 1V | 225mW | 95MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Nexperia USA Inc. |
BC816-25/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
|
Package: - |
Stock432 |
|
500 mA | 80 V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 300 mW | 100MHz | 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Nexperia USA Inc. |
PBHV9414Z-Q/SOT223/SC-73
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Power - Max: 650 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Stock3,000 |
|
4 A | 140 V | 550mV @ 400mA, 4A | 100nA | 100 @ 10mA, 5V | 650 mW | - | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AD (TO-3)
|
Package: - |
Request a Quote |
|
15 A | 300 V | 5V @ 3A, 15A | - | 12 @ 5A, 2V | 175 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AD (TO-3) |
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Micro Commercial Co |
TRANS NPN 30V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 800 mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
1 A | 30 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 70 @ 100mA, 1V | 800 mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
300 mA | 150 V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 20 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
2 A | 100 V | - | - | - | 20 W | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
|
|
Microchip Technology |
TRANS PNP 80V 5A TO254
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 4 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
|
Package: - |
Request a Quote |
|
5 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 4 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-254-3, TO-254AA | TO-254 |
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|
Micro Commercial Co |
TRANS NPN 60V 1.5A TO126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
|
Package: - |
Request a Quote |
|
1.5 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 1.25 W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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|
onsemi |
TRANS NPN 80V 8A DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Power - Max: 1.75 W
- Frequency - Transition: 85MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
|
Package: - |
Stock3,057 |
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8 A | 80 V | 1V @ 400mA, 8A | 1µA | 60 @ 2A, 1V | 1.75 W | 85MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK |
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Central Semiconductor Corp |
TRANS NPN DARL 40V 0.8A TO237
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 2 W
- Frequency - Transition: 300MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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Package: - |
Stock90 |
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800 mA | 40 V | - | - | - | 2 W | 300MHz | - | Through Hole | TO-237AA | TO-237 |
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Taiwan Semiconductor Corporation |
TO-92, 30V, 0.8A, NPN BIPOLAR TR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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800 mA | 25 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 250 @ 100mA, 5V | 625 mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |