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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock3,360 |
|
2A | 50V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,896 |
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800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
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Microsemi Corporation |
TRANS NPN 250V 2A TO-66
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
- Power - Max: 2.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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Package: TO-213AA, TO-66-2 |
Stock2,448 |
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2A | 250V | 750mV @ 125mA, 1A | 5mA | 25 @ 1A, 10V | 2.5W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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STMicroelectronics |
TRANS NPN 230V 1.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 2A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,640 |
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1.5A | 230V | 1.2V @ 400mA, 2A | 250µA | 10 @ 1A, 5V | 1.5W | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 300V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,416 |
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500mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Diodes Incorporated |
TRANS PNP 40V 3A 8-MLP
- Transistor Type: PNP + Diode (Isolated)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
- Power - Max: 3W
- Frequency - Transition: 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-MLP (3x2)
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Package: 8-VDFN Exposed Pad |
Stock148,800 |
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3A | 40V | 370mV @ 250mA, 2.5A | 25nA | 60 @ 1.5A, 2V | 3W | 190MHz | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP (3x2) |
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ON Semiconductor |
TRANS PNP 20V 6A 8-CHIPFET
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V
- Power - Max: 830mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET?
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Package: 8-SMD, Flat Lead |
Stock4,320 |
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6A | 20V | 200mV @ 400mA, 4A | 100nA (ICBO) | 220 @ 1A, 2V | 830mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET? |
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ON Semiconductor |
TRANS NPN 30V 0.6A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,792 |
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600mA | 30V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 300mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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ON Semiconductor |
TRANS NPN DARL 30V 1A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,768 |
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1A | 30V | 1V @ 100µA, 100mA | 500nA | 30000 @ 20mA, 2V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 750V 6A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 750V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 4A, 5V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock4,464 |
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6A | 750V | 5V @ 1A, 4A | 1mA | 4 @ 4A, 5V | 40W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 12A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Power - Max: 100W
- Frequency - Transition: 4MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock164,628 |
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12A | 400V | 3V @ 3A, 12A | - | 8 @ 5A, 5V | 100W | 4MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 2A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
- Power - Max: 25W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock5,040 |
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2A | 60V | 600mV @ 100mA, 1A | 100µA (ICBO) | 25 @ 1A, 2V | 25W | 3MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Rohm Semiconductor |
TRANS NPN 20V 3A ATV
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 1W
- Frequency - Transition: 290MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: ATV
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Package: 3-SIP |
Stock6,736 |
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3A | 20V | 500mV @ 100mA, 2A | 100nA (ICBO) | 180 @ 100mA, 2V | 1W | 290MHz | 150°C (TJ) | Through Hole | 3-SIP | ATV |
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Rohm Semiconductor |
TRANS PNP 40V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,336 |
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600mA | 40V | 750mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 1V | 625mW | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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ON Semiconductor |
TRANS PNP 375V 1A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 375V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
- Power - Max: 40W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock28,836 |
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1A | 375V | 1V @ 200mA, 1A | 1mA | 30 @ 300mA, 10V | 40W | 10MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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TSC America Inc. |
TRANSISTOR, NPN, 30V, 0.1A, 200A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,760 |
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100mA | 30V | - | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Panasonic Electronic Components |
TRANS NPN 10V 0.05A SSSMINI-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
- Power - Max: 100mW
- Frequency - Transition: 2.7GHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2
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Package: SOT-723 |
Stock5,650,740 |
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50mA | 10V | 500mV @ 4mA, 20mA | 1µA (ICBO) | 75 @ 5mA, 4V | 100mW | 2.7GHz | 125°C (TJ) | Surface Mount | SOT-723 | SSSMini3-F2 |
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ON Semiconductor |
TRANS PNP 50V 2A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock142,800 |
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2A | 50V | 700mV @ 50mA, 1A | 100nA (ICBO) | 100 @ 100mA, 2V | 500mW | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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ON Semiconductor |
TRANS NPN 50V 4A SOT89-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock86,268 |
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4A | 50V | 225mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 500mA, 2V | 1.3W | 400MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1.16 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1.16 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U3 |
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Renesas Electronics Corporation |
TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS NPN 120V 40A TO3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 40 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 25mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 40A, 2V
- Power - Max: 140 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
|
Package: - |
Request a Quote |
|
40 A | 120 V | - | 25mA (ICBO) | 10 @ 40A, 2V | 140 W | - | -65°C ~ 200°C (TA) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Sanyo |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Power - Max: 750 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
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Package: - |
Request a Quote |
|
2 A | 25 V | 400mV @ 75mA, 1.5A | 100nA (ICBO) | 140 @ 100mA, 2V | 750 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 3-NP |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 7.5 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
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5 A | 100 V | - | - | - | 7.5 W | - | - | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Microchip Technology |
TRANS PNP 60V 6A TO66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
6 A | 60 V | - | - | - | 40 W | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Central Semiconductor Corp |
TRANS NPN 35V TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: -
- Frequency - Transition: 50MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: - |
Stock1,881 |
|
- | 35 V | - | 1µA (ICBO) | 40 @ 150mA, 10V | - | 50MHz | - | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Micro Commercial Co |
TRANS NPN 50V 2A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 210MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
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2 A | 50 V | 350mV @ 50mA, 1A | 100nA (ICBO) | 82 @ 500mA, 2V | 500 mW | 210MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Request a Quote |
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1.5 A | 25 V | 500mV @ 80mA, 800mA | 100nA | 120 @ 100mA, 1V | 200 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |