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Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V SC71
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock7,664 |
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800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Through Hole | SC-71 | MSTM |
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Microsemi Corporation |
TRANS NPN 350V 10A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
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Package: TO-254-3, TO-254AA (Straight Leads) |
Stock2,944 |
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10A | 350V | 1.5V @ 1.67A, 10A | 1mA | 6 @ 10A, 3V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | TO-254AA |
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Microsemi Corporation |
TRANS NPN 300V 2A TO-5
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock5,664 |
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2A | 300V | 800mV @ 400mA, 2A | 200nA | 25 @ 500mA, 5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Fairchild/ON Semiconductor |
TRANS PNP 80V 1A TO-226
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-226
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock5,504 |
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1A | 80V | 500mV @ 10mA, 250mA | 100nA (ICBO) | 50 @ 250mA, 1V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226 |
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Fairchild/ON Semiconductor |
TRANS PNP 40V 0.2A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock2,416 |
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200mA | 40V | 400mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 625mW | 250MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Microsemi Corporation |
TRANS NPN 60V 0.05A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 2nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
- Power - Max: 360mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: 4-SMD, No Lead |
Stock7,488 |
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50mA | 60V | 300mV @ 100µA, 1mA | 2nA | 225 @ 10mA, 5V | 360mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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ON Semiconductor |
TRANS NPN DARL 100V 2A DPAK-4
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 1.75W
- Frequency - Transition: 25MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,552 |
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2A | 100V | 3V @ 40mA, 4A | 20µA | 1000 @ 2A, 3V | 1.75W | 25MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
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ON Semiconductor |
TRANS NPN 100V 2A TP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,216 |
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2A | 100V | 400mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP |
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ON Semiconductor |
TRANS PNP 80V 4A TO-225AA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
- Power - Max: 36W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock19,752 |
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4A | 80V | 800mV @ 300mA, 3A | 100µA (ICBO) | 40 @ 500mA, 1V | 36W | 3MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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TSC America Inc. |
TRANSISTOR, NPN, 30V, 0.1A, 420A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,552 |
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100mA | 30V | - | 15nA (ICBO) | 420 @ 2mA, 5V | 500mW | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microsemi Corporation |
TRANS NPN 60V 20A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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Package: TO-204AA, TO-3 |
Stock6,528 |
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20A | 60V | 4V @ 4A, 20A | 5mA | 15 @ 10A, 4V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-3 |
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Panasonic Electronic Components |
TRANS NPN DARL 100V 2A MT-3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 10V
- Power - Max: 1.5W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: MT-3-A1
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Package: 3-SIP |
Stock5,472 |
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2A | 100V | 1.5V @ 1mA, 1A | 100nA (ICBO) | 8000 @ 1A, 10V | 1.5W | 150MHz | 150°C (TJ) | Through Hole | 3-SIP | MT-3-A1 |
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Micro Commercial Co |
TRANS NPN 100V 6A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock16,314 |
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6A | 100V | 1.5V @ 600mA, 6A | 700µA | 15 @ 3A, 4V | 2W | 3MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock297,348 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Nexperia USA Inc. |
TRANS NPN 40V 0.2A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock230,862 |
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200mA | 40V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 100 @ 10mA, 1V | 250mW | 300MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
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NTE Electronics, Inc |
TRANS PNP 200V 15A TO3PBL
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PBL
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Package: - |
Request a Quote |
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15 A | 200 V | 3V @ 1A, 10A | 5µA (ICBO) | 55 @ 1A, 5V | 150 W | 25MHz | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PBL |
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Sanyo |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 70 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
- Power - Max: 600 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
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Package: - |
Request a Quote |
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70 mA | 160 V | 400mV @ 3mA, 30mA | 100nA (ICBO) | 140 @ 10mA, 5V | 600 mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 3-NP |
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Microchip Technology |
TRANS PNP 20V 0.1A UB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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100 mA | 20 V | - | 10µA (ICBO) | 70 @ 1mA, 500mV | 400 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UB |
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Central Semiconductor Corp |
TRANS PNP 300V 0.5A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 2 W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: - |
Request a Quote |
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500 mA | 300 V | 500mV @ 2mA, 20mA | 250nA (ICBO) | 25 @ 30mA, 10V | 2 W | 50MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Rohm Semiconductor |
TRANS NPN 12V 0.5A EMT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
- Power - Max: 150 mW
- Frequency - Transition: 260MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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Package: - |
Stock8,904 |
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500 mA | 12 V | 250mV @ 10mA, 200mA | 100nA (ICBO) | 270 @ 10mA, 2V | 150 mW | 260MHz | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | EMT3 |
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onsemi |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 1.75 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
Request a Quote |
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4 A | 60 V | 1.5V @ 4mA, 2A | 100µA (ICBO) | 2000 @ 2A, 2V | 1.75 W | 20MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Microchip Technology |
NPN SILICON TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS PNP 80V 2A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 30 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Nexperia USA Inc. |
TRANS NPN 80V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 155MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 600 mW | 155MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Infineon Technologies |
SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-1
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Package: - |
Request a Quote |
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800 mA | 32 V | 700mV @ 50mA, 500mA | 20nA (ICBO) | 100 @ 100mA, 1V | 330 mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-1 |
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Micro Commercial Co |
TRANS PNP 25V 1.5A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 1 W
- Frequency - Transition: 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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1.5 A | 25 V | 800mV @ 80mA, 800mA | 100nA | 120 @ 100mA, 1V | 1 W | 190MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microchip Technology |
TRANS PNP 100V 5A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
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5 A | 100 V | 1.2V @ 500mA, 5A | 100µA | 60 @ 2A, 2V | 1 W | - | -65°C ~ 200°C | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Central Semiconductor Corp |
TRANS PNP 60V 0.6A SOT523
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SOT-523
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Package: - |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 250 mW | 200MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | SOT-523 |