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Toshiba Semiconductor and Storage |
TRANS NPN 400MA 80V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 400mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
- Power - Max: 800mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,144 |
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400mA | 80V | 400mV @ 20mA, 200A | 100nA (ICBO) | 70 @ 50mA, 2V | 800mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
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STMicroelectronics |
TRANS NPN 60V 3A DPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
- Power - Max: 15W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,616 |
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3A | 60V | 500mV @ 150mA, 3A | 100nA (ICBO) | 160 @ 1A, 2V | 15W | 130MHz | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK |
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STMicroelectronics |
TRANS NPN 400V 12A TO-247
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
- Power - Max: 125W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock5,296 |
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12A | 400V | 2V @ 2.4A, 12A | - | 18 @ 5A, 5V | 125W | - | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 80V 0.5A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,840 |
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500mA | 80V | 200mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN DARL 80V 8A TO-220AB
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 65W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock16,560 |
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8A | 80V | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 65W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 1.5A TO-226
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-226
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,296 |
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1.5A | 45V | 1V @ 100mA, 1A | 100nA (ICBO) | 40 @ 250mA, 2V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-226 |
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Fairchild/ON Semiconductor |
TRANS PNP 150V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 400MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,184 |
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600mA | 150V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 625mW | 400MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Panasonic Electronic Components |
TRANS NPN 400V 0.07A TO-126
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Power - Max: 1.2W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
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Package: TO-225AA, TO-126-3 |
Stock3,072 |
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70mA | 400V | 1.2V @ 5mA, 50mA | 10µA | 30 @ 5mA, 10V | 1.2W | 80MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126B-A1 |
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Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR-SMALL SI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 1.8W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock7,184 |
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100mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 50 @ 30mA, 10V | 1.8W | 50MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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TSC America Inc. |
TRANSISTOR, NPN, 450V, 5A, 25A/A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 3.5A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 3V
- Power - Max: 45W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251 (IPAK)
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,768 |
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5A | 450V | 2V @ 1A, 3.5A | 250µA | 25 @ 200mA, 3V | 45W | - | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) |
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Fairchild/ON Semiconductor |
TRANS PNP 150V 2A TO-220
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 400mA, 10V
- Power - Max: 25W
- Frequency - Transition: 5MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock10,692 |
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2A | 150V | 1V @ 50mA, 500mA | 50µA (ICBO) | 120 @ 400mA, 10V | 25W | 5MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 100V 12A TO-220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Power - Max: 80W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock59,256 |
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12A | 100V | 3V @ 100mA, 10A | 1mA | 750 @ 5A, 3V | 80W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Rohm Semiconductor |
TRANS PNP 12V 1.5A TSMT3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: TSMT3
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Package: SC-96 |
Stock996,336 |
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1.5A | 12V | 200mV @ 25mA, 500mA | 100nA (ICBO) | 270 @ 200mA, 2V | 500mW | 400MHz | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 |
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Panasonic Electronic Components |
TRANS PNP 50V 0.5A MINI3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B-B
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,112 |
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500mA | 50V | 600mV @ 30mA, 300mA | 100nA (ICBO) | 170 @ 150mA, 10V | 200mW | 130MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G3-B-B |
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Rohm Semiconductor |
TRANS NPN 30V 0.3A SOT-346 SMT3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock15,360 |
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300mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 5000 @ 10mA, 5V | 350mW | 125MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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ON Semiconductor |
TRANS NPN DARL 60V 5A TO220AB
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock7,524 |
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5A | 60V | 4V @ 20mA, 5A | 500µA | 1000 @ 3A, 3V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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ON Semiconductor |
TRANS NPN 65V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock118,872 |
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100mA | 65V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Nexperia USA Inc. |
PBSS4041PT-Q/SOT23/TO-236AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2.7 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 390 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
Request a Quote |
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2.7 A | 60 V | 360mV @ 300mA, 3A | 100nA | 200 @ 500mA, 2V | 390 mW | 150MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Central Semiconductor Corp |
TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 35 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: -
- Frequency - Transition: 200MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
Request a Quote |
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- | 35 V | - | 500nA (ICBO) | 40 @ 150mA, 10V | - | 200MHz | - | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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onsemi |
SMALL SIGNAL BIPOLAR TRANS PNP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 10V
- Power - Max: 625 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: - |
Request a Quote |
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500 mA | 300 V | 1V @ 5mA, 50mA | 50nA (ICBO) | 45 @ 30mA, 10V | 625 W | 200MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Central Semiconductor Corp |
TRANS PNP 60V 0.6A TO18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1.8 W
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
|
Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 40 @ 150mA, 10V | 1.8 W | 200MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Renesas Electronics Corporation |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS NPN 50V 0.8A TO18
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Diotec Semiconductor |
IC
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
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100 mA | 45 V | 600mV @ 5mA, 100mA | 15nA | 110 @ 2mA, 5V | 500 mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Micro Commercial Co |
TRANS NPN 60V 0.7A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
- Power - Max: 800 mW
- Frequency - Transition: 30MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
700 mA | 60 V | 400mV @ 50mA, 500mA | 100nA (ICBO) | 200 @ 50mA, 2V | 800 mW | 30MHz | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Diodes Incorporated |
PWR HI VOLTAGE TRANSISTOR TO252
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
- Power - Max: 1.5 W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
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Package: - |
Stock7,470 |
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6 A | 100 V | 1.5V @ 600mA, 6A | 1µA | 30 @ 300mA, 4V | 1.5 W | 3MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) |
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Micro Commercial Co |
TRANS PNP 60V 3A TO220F
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 9MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: - |
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3 A | 60 V | 1V @ 200mA, 2A | 100µA (ICBO) | 100 @ 500mA, 5V | 2 W | 9MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Micro Commercial Co |
TRANS PNP 50V 4A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2mA, 200mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
- Power - Max: 2 W
- Frequency - Transition: 15MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: - |
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4 A | 50 V | 1V @ 2mA, 200mA | 1µA (ICBO) | 60 @ 1A, 4V | 2 W | 15MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |